Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec: Difference between revisions

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 '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.labadviser.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Si_sputter_in_Wordentec click here]'''
-== Silicon sputter==
+'''<p style="color:red;">The Wordentec has been decomissioned in 2025. These results are kept for reference.</p>'''
-Silicon can be sputter deposited in [[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec.]]
+= Silicon sputtering in the Wordentec=
+Silicon can be sputter deposited in the [[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]] as well as in the [[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System(Lesker)]] (details on sputtering Si in the Sputter-System Lesker [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Lesker|here]]) and in the new [[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Cluster Lesker]] (results [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Metal-Oxide(PC1)|here]] and [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si sputter in Sputter-System Metal-Oxide(PC3)|here]]).
-'''Parameters'''
-Listed below are tried parameters, that can be used during deposition. The process parameters in the table below can be used as started values, run a test process to be sure that you get the right thickness.
+==Parameters==
+Listed below are tried parameters, that can be used during Si deposition in the Wordentec. The process parameters in the table below can be used as started values, run a test process to be sure that you get the right thickness.
 '''Do not use the power more than 180 W without consulting staff''', since the Si target could break into a lot of small pieces.
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-In November 2018 Rebecca Ettlinger and Patama Pholprasit tested Si sputter deposition in the Wordentec at 500 W with a low sputter pressure of 2*10<sup>-3</sup> mbar together with Yannick Seis. The aim was a better uniformity of the sputtered film. See details in the process log. It is thus possible to use a higher power together with a lower pressure, but please do not do this without consulting the Thin Film group.