Specific Process Knowledge/Characterization: Difference between revisions
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| width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/XPS|XPS]] | | width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/XPS|XPS]] | ||
| width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/PL_mapper|PL mapper]] | | width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/PL_mapper|PL mapper]] | ||
| width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[ | | width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific Process Knowledge/Characterization/Four-Point Probe|4-point probe]] | ||
| width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Probe_station|Probe station]] | | width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/Probe_station|Probe station]] | ||
| width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/XRD|XRD]] | | width="30" align="center" style="writing-mode: vertical-lr; transform: rotate(180deg);background:#f0f0f0;"|[[Specific_Process_Knowledge/Characterization/XRD|XRD]] | ||
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|align="left"| [[Specific_Process_Knowledge/Characterization/Element_analysis|Element analysis]]||||x||||||||||||||x||x 4 | |align="left"| [[Specific_Process_Knowledge/Characterization/Element_analysis|Element analysis]]||||x||||||||||||||x||x <sup>{{fn|4}}</sup>||||||x <sup>{{fn|4}}</sup>|||||||||||||| | ||
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|align="left"| [[Specific_Process_Knowledge/Characterization/Stress_measurement|Film stress]]||||||||x||||||||||||||||||x 7 | |align="left"| [[Specific_Process_Knowledge/Characterization/Stress_measurement|Film stress]]||||||||x||||||||||||||||||x <sup>{{fn|7}}</sup>|||||||||||||| | ||
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|align="left"| Reflectivity||||||||||||x||x||||||x 6 | |align="left"| Reflectivity||||||||||||x||x||||||x <sup>{{fn|6}}</sup>||||||||||||||||||||x | ||
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|align="left"| Step coverage||x 1 | |align="left"| Step coverage||x <sup>{{fn|1}}</sup>||x <sup>{{fn|1}}</sup>|||||||||||||||||||||||||||||||||||| | ||
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|align="left"| [[Specific_Process_Knowledge/Characterization/Measurement_of_film_thickness_and_optical_constants|Thin film thickness]]||x 1 | |align="left"| [[Specific_Process_Knowledge/Characterization/Measurement_of_film_thickness_and_optical_constants|Thin film thickness]]||x <sup>{{fn|1}}</sup>||x <sup>{{fn|1}}</sup>||x <sup>{{fn|2}}</sup>||x <sup>{{fn|2}}</sup>||x ||x||x||||||x <sup>{{fn|5}}</sup>||x <sup>{{fn|3}}</sup>||||x|||||||||||||| | ||
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|align="left"| [[Specific_Process_Knowledge/Characterization/Thickness_Measurer|Wafer thickness]]||x 1 | |align="left"| [[Specific_Process_Knowledge/Characterization/Thickness_Measurer|Wafer thickness]]||x <sup>{{fn|1}}</sup>||x <sup>{{fn|1}}</sup>||||||||||||x|||||||||||||||||||||||| | ||
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<br clear="all"> | |||
<sup>{{fn|1}}</sup> Using the cross section method<br> | |||
<sup>{{fn|2}}</sup> Using the create step method<br> | |||
<sup>{{fn|3}}</sup> With known resistivity<br> | |||
<sup>{{fn|4}}</sup> Composition information for crystalline materials<br> | |||
<sup>{{fn|5}}</sup> Only single layer<br> | |||
<sup>{{fn|6}}</sup> Good for characterization of VCSEL structures and DBR mirrors<br> | |||
<sup>{{fn|7}}</sup> Only for crystalline films<br> | |||
== Choose characterization topic == | == Choose characterization topic == | ||
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===Electrical measurements=== | ===Electrical measurements=== | ||
*[[/ | *[[/Four-Point Probe|4-Point Probe]] | ||
*[[/Probe station|Probe station]] | *[[/Probe station|Probe station]] | ||
*[[/III-V ECV-profiler|III-V ECV-profiler (Electrochemical Capacitance-Voltage carrier density profiler)]] | *[[/III-V ECV-profiler|III-V ECV-profiler (Electrochemical Capacitance-Voltage carrier density profiler)]] | ||
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===SEMs at DTU Nanolab - building 307/314=== | ===SEMs at DTU Nanolab - building 307/314=== | ||
<!-- *[[LabAdviser/CEN/Quanta 3D FIB/SEM|FIB-SEM FEI QUANTA 200 3D]] --> | <!-- *[[LabAdviser/CEN/Quanta 3D FIB/SEM|FIB-SEM FEI QUANTA 200 3D]] --> | ||
*[[LabAdviser/ | *[[LabAdviser/314/Microscopy 314-307/FIB/Helios|Dual Beam FEI Helios Nanolab 600]] | ||
*[[LabAdviser/ | *[[LabAdviser/314/Microscopy 314-307/SEM/Nova|SEM FEI Nova 600 NanoSEM]] | ||
*[[LabAdviser/ | *[[ | ||
LabAdviser/314/Microscopy 314-307/SEM/QFEG|SEM FEI Quanta 200 ESEM FEG]] | |||
<!-- *[[LabAdviser/CEN/Inspect S|SEM Inspect S]] --> | <!-- *[[LabAdviser/CEN/Inspect S|SEM Inspect S]] --> | ||
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===TEMs at DTU Nanolab - building 307/314=== | ===TEMs at DTU Nanolab - building 307/314=== | ||
*[[LabAdviser/ | *[[LabAdviser/314/Microscopy 314-307/TEM/ATEM |Titan ATEM]] | ||
*[[LabAdviser/ | *[[LabAdviser/314/Microscopy 314-307/TEM/ETEM |Titan ETEM]] | ||
*[[LabAdviser/ | *[[LabAdviser/314/Microscopy 314-307/TEM/T20 |Tecnai TEM]] | ||
===XRD=== | ===XRD=== | ||
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==Decommissioned equipment== | ==Decommissioned equipment== | ||
*[[/KLA-Tencor Surfscan 6420|KLA-Tencor Surfscan 6420]] | *[[/KLA-Tencor Surfscan 6420|KLA-Tencor Surfscan 6420]] | ||
*[[/X-Ray Diffractometer|Phillips X-Ray Diffractometer | *[[/X-Ray Diffractometer|Phillips X-Ray Diffractometer (owned by DTU Fotonik)]] | ||
Latest revision as of 15:09, 20 June 2025
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Overview of characteristics and where to measure it
| Optical Microscopes | SEM (incl. EDX) | AFM | Stylus profilers | Optical profilers | Filmtek (reflectometer) | Ellipsometer | Thickness stylus | XPS | PL mapper | 4-point probe | Probe station | XRD | Life time scanner | Drop shape analyser | Hardness tester | Particle scanner | IR-camera | III-V ECV-profiler | Microspectrophotometer (Craic 20/30 PV) | |
| Breakdown voltage | ||||||||||||||||||||
| Carrier density/doping profile | x | |||||||||||||||||||
| Charge carrier life time | x | |||||||||||||||||||
| Contact angle hydrophobic/hydrophillic | x | |||||||||||||||||||
| Crystallinity | x | |||||||||||||||||||
| Deposition uniformity | x | x | x | |||||||||||||||||
| Dimensions(in plane) | x | x | (x) | (x) | x | x | ||||||||||||||
| Dimensions(height)/Topography | (x) | (x) | x | x | x | |||||||||||||||
| Electrical conductivity | x | |||||||||||||||||||
| Element analysis | x | x | x 4 | x 4 | ||||||||||||||||
| Film stress | x | x 7 | ||||||||||||||||||
| Imaging | x | x | x | x | x | |||||||||||||||
| Material Hardness | x | |||||||||||||||||||
| Band gap | x | x | x | |||||||||||||||||
| Particles | x | x | x | x | x | |||||||||||||||
| Phase changes | ||||||||||||||||||||
| Reflectivity | x | x | x 6 | x | ||||||||||||||||
| Refractive index | x | x | ||||||||||||||||||
| Resistivity | x | |||||||||||||||||||
| Step coverage | x 1 | x 1 | ||||||||||||||||||
| Surface roughness | x | x | x | x | ||||||||||||||||
| Thermal conductivity | ||||||||||||||||||||
| Thin film thickness | x 1 | x 1 | x 2 | x 2 | x | x | x | x 5 | x 3 | x | ||||||||||
| Voids in wafer bonding | x | x | x | |||||||||||||||||
| Wafer thickness | x 1 | x 1 | x | |||||||||||||||||
| Work function | x |
1 Using the cross section method
2 Using the create step method
3 With known resistivity
4 Composition information for crystalline materials
5 Only single layer
6 Good for characterization of VCSEL structures and DBR mirrors
7 Only for crystalline films
Choose characterization topic
- Carrier density (doping) profiler
- Contact angle measurement
- Element analysis
- Film thickness and optical constants
- Hardness measurement
- Photoluminescence mapping
- Four-Point Probe (Resistivity measurement)
- Sample imaging
- Sample preparation for inspection
- Scanning Electron Microscopy
- Stress measurement
- Wafer thickness measurement
- Topographic measurement
- X-ray diffraction
Choose equipment
AFM
Electrical measurements
- 4-Point Probe
- Probe station
- III-V ECV-profiler (Electrochemical Capacitance-Voltage carrier density profiler)
Element analysis
Optical and stylus profilers
- Sensofar S Neox (Optical Profiler)
- Dektak XTA (Stylus Profiler)
- Tencor P17 (Stylus Profiler)
- Dektak 3ST (Stylus profiler)
- Dektak 150 (Stylus Profiler)
Optical microscopes
Optical characterization
SEMs at DTU Nanolab - building 307/314
LabAdviser/314/Microscopy 314-307/SEM/QFEG|SEM FEI Quanta 200 ESEM FEG]]
SEM's in building 346
TEMs at DTU Nanolab - building 307/314
XRD
- General page on XRD, page describing general info relevant to both our XRD's
- XRD Powder, tabletop XRD for Bregg-Brentano measurements of powders
- XRD SmartLab, advanced multipurpose instrument in the cleanroom
- XRD SmartLab 9kW Rotating Anode multipurpose system outside the cleanroom