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Copper can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.


'''Feedback to this page''': '''[mailto:LabAdviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Copper click here]'''


<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>
= Deposition of Cu =
Copper can be deposited by e-beam evaporation or sputtering at Nanolab. We have also recently developed a process with thermal evaporation (2024). In the chart below you can compare the different deposition equipment. Further down you will find some results of studies on Cu deposition processes.
==Studies of Cu deposition==
[[/Deposition of Copper/Resistive thermal evaporation of Copper|Resistive thermal evaporation of copper]]
[[/Deposition of Copper|Roughness of Cu layers]] - ''Roughness of Cu layers deposited with the Alcatel e-beam evaporator'' - this particular machine has been decommissioned, but the results may still be of interest.
[[Specific_Process_Knowledge/Thin_film_deposition/Lesker/Stress_dependence_on_sputter_parameters_in_the_Lesker_sputter_system#Cu:_Low_stress|Stress in sputtered Cu]] - ''Low stress in Cu films sputtered with the Sputter-System (Lesker)''
==Comparison of equipment for Cu deposition==
{| border="1" cellspacing="0" cellpadding="3"  
{| border="1" cellspacing="0" cellpadding="3"  
|-style="background:silver; color:black"
!  
!  
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]])


! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
|-  
|-  
| Batch size
|-style="background:WhiteSmoke; color:black"
|
! General description
*Up to 1x4" wafers
|E-beam deposition of Cu
*smaller pieces
(line-of-sight deposition)
|
|Sputter deposition of Cu
* 4x6" wafers or
(not line-of-sight deposition)
* 4x4" wafers or
|Sputter deposition of Cu
* 4x2" wafers
(not line-of-sight deposition)
|-
|-
| Pre-clean
 
|-style="background:LightGrey; color:black"
 
!Pre-clean
|Ar ion etch (only in E-beam evaporator Temescal)
|RF Ar clean
|RF Ar clean
|RF Ar clean
|RF Ar clean


|-
|-
| Layer thickness
|-style="background:WhiteSmoke; color:black"
|10Å to 0.5µm
 
|
!Layer thickness
10Å to 0.5µm
|10Å to 1µm*
|10Å to 1µm**
|10Å to 1µm**
 
|-
|-style="background:LightGrey; color:black"


! Deposition rate
|1-10 Å/s
|~ 1 Å/s
|Depends on process parameters, at least up to 8.7 Å/s, see conditions [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|here]]
|-
|-
| Deposition rate
 
|2Å/s to 15Å/s
|-style="background:WhiteSmoke; color:black"
! Batch size
|
*Up to 4x6" wafers
*Up to 3x8" wafers (ask for holder)
*smaller pieces
|
*smaller pieces
*Up to 1x6" wafers
|
|
Depending on process paraneters
*Up to 10x4" or 6" wafers
*or many smaller pieces
|-
|-
|-style="background:LightGrey; color:black"
!Allowed materials
|
* Almost any that does not degas - also if you plan to use heating.
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
|
* Almost any that does not degas.
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=167 cross-contamination sheet]
|
*Almost that does not degas also if you plan to heat the substrate - see cross contamination sheets for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 PC1] and [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 PC3]
|}
|}


'''*''' ''To deposit layers thicker than 600 nm permission is required to ensure that there is enough metal (contact metal@nanolab.dtu.dk)''


== Studies of Cu deposition processes ==
'''**''' ''To deposit layers thicker than 200 nm permission is required to ensure that there is enough metal (contact metal@nanolab.dtu.dk)''
 
[[/Deposition of Copper|Roughness of Cu layers]] - ''Roughness of Cu layers deposited with Alcatel''
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