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<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>


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== Deposition of Aluminium ==
Aluminium can be deposited by e-beam evaporation, sputtering and thermal evaporation. In the chart below we compare the different methods and available equipment.
==Sputtering of Aluminium==
Aluminium may be sputter deposited in either the single-chamber sputter-system ("Sputter System Lesker") or the cluster-based sputter system ("Sputter-System Metal-Oxide(PC1)" and "Sputter-System Metal-Nitride(PC3)"). See more in links here and the chart below.


'''Feedback to this page''': '''[mailto:pvd@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Aluminium click here]'''
*[[Specific Process Knowledge/Thin film deposition/Deposition of Aluminium/Al sputtering in Sputter System (Lesker)|Al sputtering in Sputter System (Lesker)]]
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*[[Specific Process Knowledge/Thin film deposition/Deposition of Aluminium/Al Sputtering in Cluster Lesker PC3|Al Sputtering in Sputter-System Metal-Nitride(PC3)]]


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==E-beam evaporation of Aluminium==
 
Aluminium can be deposited by e-beam assisted evaporation in the two Temescal e-beam evaporators.
 
*[[/Al Ebeam evaporation in Temescal |E-beam evaporation of Al in Temescal]]
 
*[[/Notes on low oxygen content in e-beam prepared Al thin films|Notes on low oxygen content in e-beam prepared Al thin films (Temescal)]]
<!---->
 
==Thermal deposition of Aluminium==


In the Lesker Thermal evaporator aluminium can be deposited by thermal deposition. Some properties of the evaporated films are described on the following page:


Aluminium can be deposited by e-beam evaporation, by sputter and by thermal evaporation. In the chart below you can compare the different methods on the different deposition equipment.
*[[/Thermal deposition of Al|Thermal deposition of Aluminium]]


==Comparison of Al deposition options==
<br clear="all" />
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
|-
|-
|-
|-
|-style="background:silver; color:black"
|-style="background:silver; color:black"
!
![[Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride|LPCVD]]
![[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]]
|-


|-
 
 
!
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System (Lesker)]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal Evaporator]])
|-  
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Generel description
! General description
|Low Pressure Chemical Vapour Deposition (LPCVD furnace process)
|Plasma Enhanced Chemical Vapour Deposition (PECVD process)
|-


|-
|-style="background:LightGrey; color:black"
!Stoichiometry
|
|
*Si<sub>3</sub>N<sub>4</sub>
E-beam deposition of Aluminium. Option to tilt substrate.
*SRN (only 4" nitride furnace)
|
Si<sub>3</sub>N<sub>4</sub>: Stoichiometric nitride
E-beam deposition of Aluminium. Option to tilt substrate.
 
SRN: Silicon rich (low stress) nitride
|
|
*Si<sub>x</sub>N<sub>y</sub>H<sub>z</sub>
Sputter deposition of Aluminium (DC)
*Si<sub>x</sub>O<sub>y</sub>N<sub>z</sub>H<sub>v</sub>
Silicon nitride can be doped with boron, phosphorus or germanium
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!Film thickness
|
|
*Si<sub>3</sub>N<sub>4</sub>: ~50 Å - ~1400 Å
Sputter deposition of Aluminium (DC, Pulsed DC, HIPIMS)
*SRN: ~50 Å - ~2800 Å
Thicker nitride layers can be deposited over more runs
|
|
*~40 nm - 10 µm
Aluminum deposition onto unexposed e-beam resist
|-
 
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Process temperature
! Pre-clean
|Ar ion etch
|
|
|
*780 <sup>o</sup>C - 845 <sup>o</sup>C
|RF Ar clean
|
|
*300 <sup>o</sup>C
|-
|-
 
|-style="background:WhiteSmoke; color:black"
! Layer thickness
|10Å to 1 µm*
|10Å to 1 µm*
|10Å to ~0.5µm (very time consuming )
|10Å to ~0.5µm
|10Å to 1 µm*
|-
|-style="background:LightGrey; color:black"
! Deposition rate
|1Å/s to 10Å/s
|1Å/s to 5Å/s
|Depending on [[/Al sputtering in Sputter System (Lesker) |process parameters]] at least up to 0.7 Å/s
|Depending on process parameters at least up to 1.3 Å/s. See conditions [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|here]]
|0.5, 1, or 2 Å/s
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Step coverage
! Batch size
|
|
*Good
*Up to 4x6" or 3x8" wafers
*smaller pieces
|
|
*Less good
*Up to 4x6" or 3x8" wafers
|-
*smaller pieces
 
|-
|-style="background:LightGrey; color:black"
!Film quality
|
|
*Deposition on both sides og the substrate
*1x4" wafer or
*Dense film
*1x6" wafer or
*Few defects
several small samples
|
|
*Deposition on one side of the substrate
*up to 10x4" wafers or
*Less dense film
*up to 10x6" wafers
*Incorporation of hydrogen in the film
*or many smaller samples
|-
 
|-
|-style="background:WhiteSmoke; color:black"
!KOH etch rate (80 <sup>o</sup>C)
|
|
*Expected <1 Å/min
*Up to 3 x 4" wafers or one 6" or 8" wafer (limited uniformity on large substrates)
|
*Many small chips
*Dependent on recipe: ~1-10 Å/min
|-


|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!BHF etch rate
! Pumping time from wafer load
 
|
Approx. 20-30 min
|
Approx. 20-30 min
|
Approx. 10 min
|
Approx. 5 min plus 6 min transfer time
|
|
*Very low
Approx. 15-20 min
|
*Very high compared the LPCVD nitride
|-


|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Batch size
! Allowed materials
|
*1-25 100 mm wafers
*1-25 150 mm wafers (only 6" furnace)
Depending on what furnace you use
|
*Several smaller samples
*1-several 50 mm wafers
*1-3 100 mm wafers
*1 150 mm wafer
Depending on what PECVD you use
|-


|-
|  
|-style="background:LightGrey; color:black"
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet].
!'''Allowed materials'''
|
*Silicon
*Silicon oxide
*Silicon nitride
*Pure quartz (fused silica)
Processed wafers have to be RCA cleaned
|
*Silicon
*Silicon oxide (with boron, phosphorous and germanium)
*Silicon nitrides (with boron, phosphorous and germanium)
*Pure quartz (fused silica)
|-
|}


<br clear="all" />
|
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet].


{| border="1" cellspacing="0" cellpadding="6"
!
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
|-
| Batch size
|
*Up to 1x4" wafers
*smaller pieces
|
*24x2" wafers or
*6x4" wafers or
*6x6" wafers
|
*12x2" wafers or
*12x4" wafers or
*4x6" wafers
|
|
*12x4" wafers or
* Silicon wafers  
*12x4" wafers or
* and almost any
*4x6" wafers
|
|
*24x2" wafers or
*Almost that does not degas - see cross contamination sheets for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 PC1] and [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 PC3]
*6x4" wafers or
* Special carrier for III-V materials.
*6x6" wafers
|
|
*24x2" wafers or
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=404 cross-contamination sheet].
*6x4" wafers or
*6x6" wafers
|-
| Pre-clean
|RF Ar clean
|RF Ar clean
|RF Ar clean
|RF Ar clean
|RF Ar clean
|RF Ar clean
|-
| Layer thickness
|10Å to 1µm
|10Å to 1 µm
|10Å to 1000 Å
|10Å to about 2000 Å
|10Å to ~0.5µm (very time consuming )
|10Å to 0.5 µm (this uses all Al in the boat)
|-
| Deposition rate
|2Å/s to 15Å/s
|10Å/s to 15Å/s
|About 1Å/s
|Dependent on [[/Sputter rates for Al PVD co-sputter/evaporation|process parameters]] (about 1 Å/s).
|Depending on [[/Sputter rates for Al|process parameters]], up to ~2.5 Å/s
|~2Å/s to 15Å/s
|-
|}
|}


'''*'''  ''For cumulative deposition above 600 nm please write to metal@nanolab.dtu.dk to make sure there will be enough Al for your deposition''


==Aluminium deposition on ZEP520A for lift-off==
==Aluminium deposition on ZEP520A for lift-off - comparison of thermal and e-beam evaporation ==
This is a small study of which aluminium deposition that is best for aluminium lift-off on ZEP520A resist and a very thin layer of aluminium (~20nm).
This is a small study of which aluminium deposition that is best for aluminium lift-off on ZEP520A resist and a very thin layer of aluminium (~20nm). The grain size is compared for the different methods.


The conclusion was that e-beam evaporation of aluminium in the Alcatel at 15Å/s gave the best result.
The conclusion was that e-beam evaporation of aluminium at 15 Å/s gave the best result.


See details of the study [[/Aluminium deposition on ZEP520A for lift-off|here]].
See details of the study [[/Aluminium deposition on ZEP520A for lift-off|here]].


==Aluminium deposition on AZ5214 for lift-off==
==Aluminium deposition on AZ5214 for lift-off==
Negative photolithographi process is recomended.
Negative photolithography process is recommended.
 
Positive photolithographi process from 1,5µ is possible especially for thin layers of metal.
 
The more pattern the easyer lift.
 
 
It was tried(jan09) to lift 2,5µ Al on 4,2µ negative resist on top of 11µ Apox SiO2 in acetone sonic-bath.
This process was done in steps evaporating 5000Å a time with 5min pause and pressure down to at least 2E-6.


Positive photolithography process from 1.5 µm is possible especially for thin layers of metal.


==Comparison of roughness and other surface characteristics for different methods of Aluminium deposition==
The more pattern the easier the lift-off.


Studies by AFM was performed to examine differences in characteristics of the Al films, deposited with the differnt methods (sputter, e-beam, thermal). See details of the study [[/Comparison of roughness and other surface characteristics for different methods of Aluminium deposition|here]].
It was tried (jan09) to lift 2.5 µm Al on 4.2 µm negative resist on top of 11 µm APOX SiO2 in an acetone sonic-bath.
The Al deposition was done in steps evaporating 500 nm a time with 5 min pause and pressure down to at least 2 E-6 mbar before proceeding.
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