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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Aluminium click here]'''


'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Aluminium click here]'''
<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>
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== Deposition of Aluminium ==
== Deposition of Aluminium ==
Aluminium can be deposited by e-beam evaporation, by sputtering and by thermal evaporation. In the chart below you can compare the different methods on the different deposition equipment.
Aluminium can be deposited by e-beam evaporation, sputtering and thermal evaporation. In the chart below we compare the different methods and available equipment.
 


==Sputtering of Aluminium==
==Sputtering of Aluminium==


Aluminium may be sputter deposited in either Wordentec or the Lesker sputter system.
Aluminium may be sputter deposited in either the single-chamber sputter-system ("Sputter System Lesker") or the cluster-based sputter system ("Sputter-System Metal-Oxide(PC1)" and "Sputter-System Metal-Nitride(PC3)"). See more in links here and the chart below.  
 
*[[/Sputter rates for Al|Sputtering of Aluminium of Wordentec]]


*[[Specific Process Knowledge/Thin film deposition/Deposition of Aluminium/Al sputtering in Sputter System (Lesker)|Al sputtering in Sputter System (Lesker)]]
*[[Specific Process Knowledge/Thin film deposition/Deposition of Aluminium/Al Sputtering in Cluster Lesker PC3|Al Sputtering in Sputter-System Metal-Nitride(PC3)]]


==E-beam evaporation of Aluminium==
==E-beam evaporation of Aluminium==


Aluminium can be deposited be e-beam assisted evaporation in wordentec, Physimeca and Temescal
Aluminium can be deposited by e-beam assisted evaporation in the two Temescal e-beam evaporators.
 


*[[/Al Ebeam evaporation in Temescal |E-beam evaporation of Al in Temescal]]
*[[/Al Ebeam evaporation in Temescal |E-beam evaporation of Al in Temescal]]


*[[/Notes on low oxygen content in e-beam prepared Al thin films|Notes on low oxygen content in e-beam prepared Al thin films (Temescal)]]
<!---->
<!---->


==Thermal deposition of Aluminium==
==Thermal deposition of Aluminium==


In the Wordentec and the Thermal evaporator aluminium can be deposited by Thermal deposition
In the Lesker Thermal evaporator aluminium can be deposited by thermal deposition. Some properties of the evaporated films are described on the following page:


*[[/Thermal deposition of Al|Thermal deposition of Aluminium]]
*[[/Thermal deposition of Al|Thermal deposition of Aluminium]]


 
==Comparison of Al deposition options==
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{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
|-
|-
|-
|-
|-style="background:silver; color:black"
|-style="background:silver; color:black"
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!  
!  
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System (Lesker)]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal Evaporator]])
! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal Evaporator]])
|-  
|-  
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|
|
E-beam deposition of Aluminium
E-beam deposition of Aluminium. Option to tilt substrate.
|
|
E-beam deposition of Aluminium
E-beam deposition of Aluminium. Option to tilt substrate.
|
|
E-beam deposition of Aluminium
Sputter deposition of Aluminium (DC)
|
|
Sputter deposition of Aluminium
Sputter deposition of Aluminium (DC, Pulsed DC, HIPIMS)
|
Aluminum deposition onto unexposed e-beam resist
|
|
Aluminum deposition onto unexposed e-beam resist
Aluminum deposition onto unexposed e-beam resist
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! Pre-clean
! Pre-clean
|Ar ion etch
|Ar ion etch
|None
|  
|RF Ar clean
|
|RF Ar clean
|RF Ar clean
|RF Ar clean
|
|None
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Layer thickness
! Layer thickness
|10Å to 1 µm*
|10Å to 1 µm*
|10Å to 0.5 µm **
|10Å to 1 µm*
|10Å to 1 µm*
|10Å to ~0.5µm (very time consuming )
|10Å to ~0.5µm (very time consuming )
|10Å to 0.2 µm*** (this uses all Al in the boat)
|10Å to ~0.5µm
|10Å to 1 µm**  
|10Å to 1 µm*  
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Deposition rate
! Deposition rate
|0.5Å/s to 15Å/s
|1Å/s to 10Å/s
|0.5Å/s to 15Å/s
|1Å/s to 5Å/s
|10Å/s to 15Å/s
|Depending on [[/Al sputtering in Sputter System (Lesker) |process parameters]] at least up to 0.7 Å/s
|Depending on [[/Sputter rates for Al|process parameters]], up to ~2.5 Å/s
|Depending on process parameters at least up to 1.3 Å/s. See conditions [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|here]]
|~1.5Å/s to 2Å/s
|0.5, 1, or 2 Å/s
|1 Å/s
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
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*smaller pieces
*smaller pieces
|
|
*Up to 1x4" wafers
*Up to 4x6" or 3x8" wafers
*smaller pieces
*smaller pieces
|
|
*24x2" wafers or  
*1x4" wafer or
*6x4" wafers or
*1x6" wafer or
*6x6" wafers
several small samples
|
|
*24x2" wafers or  
*up to 10x4" wafers or
*6x4" wafers or
*up to 10x6" wafers  
*6x6" wafers
*or many smaller samples
|
|
*24x2" wafers or  
*Up to 3 x 4" wafers or one 6" or 8" wafer (limited uniformity on large substrates)
*6x4" wafers or
*Many small chips
*6x6" wafers
|
*Up to one 8" wafer


|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
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|  
|  
Approx. 20 min
Approx. 20-30 min
|
|
Approx. 20-30 min
|  
Approx. 10 min
Approx. 10 min
|  
|  
Approx. 1 hour
Approx. 5 min plus 6 min transfer time
|
Approx. 1 hour
|
|
Approx. 1 hour
Approx. 15-20 min
|
Approx. 15 min


|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Allowed substrates
! Allowed materials


|  
|  
* Silicon wafers
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet].
* Quartz wafers
* Pyrex wafers
 
|
* Silicon wafers
* Quartz wafers
* Pyrex wafers
 


|  
|  
* Silicon wafers
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet].
* Quartz wafers
* Pyrex wafers


|
|
* Silicon wafers  
* Silicon wafers  
* Quartz wafers
* and almost any
* Pyrex wafers
|
|
* Silicon wafers
*Almost that does not degas - see cross contamination sheets for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 PC1] and [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 PC3]
* Quartz wafers
* Special carrier for III-V materials.
* Pyrex wafers
 
|
|
* Silicon wafers
Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=404 cross-contamination sheet].
* Quartz wafers
* Pyrex wafers
 
|-style="background:LightGrey; color:black"
!Allowed materials
|
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
 
|
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
 
|
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
 
 
|
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
 
 
|
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
|
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
* Metals
 
|-style="background:WhiteSmoke; color:black"
! Comment
|'''*''' Thickness above 600 nm: ask for permission
 
It is possible to tilt the substrate.
Pumpdown approx. 20 min.
 
|'''**''' Thickness above 200 nm: ask for permission.  
 
|'''*''' Thickness above 600 nm: ask for permission.
 
Pumpdown approx. 1 hour.
| Pumpdown approx. 1 hour.
|'''***'''Thickness above 120 nm: ask for permission
 
Pumpdown approx. 1 hour.
|'''**'''Thickness above 200 nm: ask for permission.
Pumpdown approx. 10 min.
 
|}
|}


'''*'''  ''For thicknesses above 600 nm please get permission from ThinFilm group by writing to metal@danchip.dtu.dk''
'''*'''  ''For cumulative deposition above 600 nm please write to metal@nanolab.dtu.dk to make sure there will be enough Al for your deposition''
 
'''**'''  ''For thicknesses above 200 nm please get permission from ThinFilm group by writing to metal@danchip.dtu.dk''
 
'''***'''  ''For thicknesses above 120 nm please get permission from ThinFilm group by writing to thinfilm@danchip.dtu.dk''


==Aluminium deposition on ZEP520A for lift-off - comparison of thermal and e-beam evaporation ==
==Aluminium deposition on ZEP520A for lift-off - comparison of thermal and e-beam evaporation ==
This is a small study of which aluminium deposition that is best for aluminium lift-off on ZEP520A resist and a very thin layer of aluminium (~20nm). The grain size is compared for the different methods.
This is a small study of which aluminium deposition that is best for aluminium lift-off on ZEP520A resist and a very thin layer of aluminium (~20nm). The grain size is compared for the different methods.


The conclusion was that e-beam evaporation of aluminium in the Alcatel at 15Å/s gave the best result.
The conclusion was that e-beam evaporation of aluminium at 15 Å/s gave the best result.


See details of the study [[/Aluminium deposition on ZEP520A for lift-off|here]].
See details of the study [[/Aluminium deposition on ZEP520A for lift-off|here]].


==Aluminium deposition on AZ5214 for lift-off==
==Aluminium deposition on AZ5214 for lift-off==
Negative photolithography process is recomended.
Negative photolithography process is recommended.
 
Positive photolithography process from 1,5 µm is possible especially for thin layers of metal.
 
The more pattern the easyer lift.


It was tried (jan09) to lift 2.5 µm Al on 4.2µ negative resist on top of 11 µm Apox SiO2 in an acetone sonic-bath.
Positive photolithography process from 1.5 µm is possible especially for thin layers of metal.
The Al deposition process was done in steps evaporating 500 nm a time with 5 min pause and pressure down to at least 2E-6.


==Roughness of thermally evaporated aluminium==
The more pattern the easier the lift-off.


A study by AFM was performed to examine Al films deposited with thermal evaporation in the Wordentec. See details [[/Roughness of thermally evaporated aluminium|here]].
It was tried (jan09) to lift 2.5 µm Al on 4.2 µm negative resist on top of 11 µm APOX SiO2 in an acetone sonic-bath.  
The Al deposition was done in steps evaporating 500 nm a time with 5 min pause and pressure down to at least 2 E-6 mbar before proceeding.
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