Specific Process Knowledge/Thin film deposition/Deposition of Aluminium: Difference between revisions

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-Aluminium can be deposited by e-beam evaporation, by sputter and by thermal evaporation. In the chart below you can compare the different methods on the different deposition equipment.
-{| border="1" cellspacing="0" cellpadding="6"
+'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Aluminium click here]'''
+<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>
+<br clear="all" />
+== Deposition of Aluminium ==
+Aluminium can be deposited by e-beam evaporation, sputtering and thermal evaporation. In the chart below we compare the different methods and available equipment.
+==Sputtering of Aluminium==
+Aluminium may be sputter deposited in either the single-chamber sputter-system ("Sputter System Lesker") or the cluster-based sputter system ("Sputter-System Metal-Oxide(PC1)" and "Sputter-System Metal-Nitride(PC3)"). See more in links here and the chart below.
+*[[Specific Process Knowledge/Thin film deposition/Deposition of Aluminium/Al sputtering in Sputter System (Lesker)|Al sputtering in Sputter System (Lesker)]]
+*[[Specific Process Knowledge/Thin film deposition/Deposition of Aluminium/Al Sputtering in Cluster Lesker PC3|Al Sputtering in Sputter-System Metal-Nitride(PC3)]]
+==E-beam evaporation of Aluminium==
+Aluminium can be deposited by e-beam assisted evaporation in the two Temescal e-beam evaporators.
+*[[/Al Ebeam evaporation in Temescal |E-beam evaporation of Al in Temescal]]
+*[[/Notes on low oxygen content in e-beam prepared Al thin films|Notes on low oxygen content in e-beam prepared Al thin films (Temescal)]]
+<!---->
+==Thermal deposition of Aluminium==
+In the Lesker Thermal evaporator aluminium can be deposited by thermal deposition. Some properties of the evaporated films are described on the following page:
+*[[/Thermal deposition of Al|Thermal deposition of Aluminium]]
+==Comparison of Al deposition options==
+<br clear="all" />
+{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"
+|-
+|-
+|-style="background:silver; color:black"
 !
-! E-beam evaporation (Alcatel)
+! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]])
-! E-beam evaporation (Leybold)
+! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
-! E-beam evaporation (Wordentec)
+! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System (Lesker)]])
-! Sputter deposition (Wordentec)
+! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
-! Thermal evaporation (Wordentec)
+! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal Evaporator]])
 |-
-| Batch size
+|-style="background:WhiteSmoke; color:black"
+! General description
 |
-*Up to 1x4" wafers
+E-beam deposition of Aluminium. Option to tilt substrate.
-*smaller pieces
 |
-*8x4" wafers or
+E-beam deposition of Aluminium. Option to tilt substrate.
-*5x6" wafers
 |
-*24x2" wafers or
+Sputter deposition of Aluminium (DC)
-*6x4" wafers or
-*6x6" wafers
 |
-*24x2" wafers or
+Sputter deposition of Aluminium (DC, Pulsed DC, HIPIMS)
-*6x4" wafers or
-*6x6" wafers
 |
-*24x2" wafers or
+Aluminum deposition onto unexposed e-beam resist
-*6x4" wafers or
-*6x6" wafers
 |-
-| Pre-clean
+|-style="background:LightGrey; color:black"
-|RF Ar clean
+! Pre-clean
-|Ar ion bombartment
+|Ar ion etch
-|RF Ar clean
+|
-|RF Ar clean
+|
 |RF Ar clean
+|
 |-
-| Layer thickness
+|-style="background:WhiteSmoke; color:black"
-|10Å to 1µm
+! Layer thickness
-|10Å to 1500 Å
+|10Å to 1 µm*
-|10Å to 1 µm
+|10Å to 1 µm*
 |10Å to ~0.5µm (very time consuming )
-|10Å to 0.5 µm (this uses all Al in the boat)
+|10Å to ~0.5µm
+|10Å to 1 µm*
 |-
-| Deposition rate
+|-style="background:LightGrey; color:black"
-|2Å/s to 15Å/s
+! Deposition rate
+|1Å/s to 10Å/s
 |1Å/s to 5Å/s
-|10Å/s to 15Å/s
+|Depending on [[/Al sputtering in Sputter System (Lesker) |process parameters]] at least up to 0.7 Å/s
-|Depending on process parameters (see [[/Sputter rates for Al|here]]), up to ~2.5 Å/s
+|Depending on process parameters at least up to 1.3 Å/s. See conditions [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|here]]
-|~8Å/s to 15Å/s
+|0.5, 1, or 2 Å/s
 |-
-|}
+|-style="background:WhiteSmoke; color:black"
+! Batch size
+|
+*Up to 4x6" or 3x8" wafers
+*smaller pieces
+|
+*Up to 4x6" or 3x8" wafers
+*smaller pieces
+|
+*1x4" wafer or
+*1x6" wafer or
+several small samples
+|
+*up to 10x4" wafers or
+*up to 10x6" wafers
+*or many smaller samples
+|
+*Up to 3 x 4" wafers or one 6" or 8" wafer (limited uniformity on large substrates)
+*Many small chips
+|-style="background:LightGrey; color:black"
+! Pumping time from wafer load
+|
+Approx. 20-30 min
+|
+Approx. 20-30 min
+|
+Approx. 10 min
+|
+Approx. 5 min plus 6 min transfer time
+|
+Approx. 15-20 min
+|-style="background:WhiteSmoke; color:black"
+! Allowed materials
-==Aluminium deposition on ZEP520A for lift-off==
+|
-This is a small study of which aluminium deposition that is best for aluminium lift-off on ZEP520A resist and a very thin layer of aluminium (~20nm).
+Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet].
-The conclusion was that e-beam evaporation of aluminium in the Alcatel at 15Å/s gave the best result.
+|
+Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet].
-See details of the study [[/Aluminium deposition on ZEP520A for lift-off|here]].
+|
+* Silicon wafers
+* and almost any
+|
+*Almost that does not degas - see cross contamination sheets for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 PC1] and [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 PC3]
+* Special carrier for III-V materials.
+|
+Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=404 cross-contamination sheet].
+|}
+'''*'''  ''For cumulative deposition above 600 nm please write to metal@nanolab.dtu.dk to make sure there will be enough Al for your deposition''
-==Comparison of roughness and other surface characteristics for different methods of Aluminium deposition==
+==Aluminium deposition on ZEP520A for lift-off - comparison of thermal and e-beam evaporation ==
+This is a small study of which aluminium deposition that is best for aluminium lift-off on ZEP520A resist and a very thin layer of aluminium (~20nm). The grain size is compared for the different methods.
-Studies by AFM was performed to examine differences in characteristics of the Al films, deposited with the differnt methods (sputter, e-beam, thermal). See details of the study [[/Comparison of roughness and other surface characteristics for different methods of Aluminium deposition|here]].
+The conclusion was that e-beam evaporation of aluminium at 15 Å/s gave the best result.
+See details of the study [[/Aluminium deposition on ZEP520A for lift-off|here]].
 ==Aluminium deposition on AZ5214 for lift-off==
-Negative photolithographi process is recomended.
+Negative photolithography process is recommended.
-Positive photolithographi process from 1,5µ is possible especially for thin layers of metal.
-The more patern the easyer lift.
+Positive photolithography process from 1.5 µm is possible especially for thin layers of metal.
+The more pattern the easier the lift-off.
-It was tried(jan09) to lift 2,5µ Al on 4,2µ negative resist on top of 11µ Apox SiO2 in acetone sonic-bath.
+It was tried (jan09) to lift 2.5 µm Al on 4.2 µm negative resist on top of 11 µm APOX SiO2 in an acetone sonic-bath.
-This process was done by steps evaporating only 5000Å a time with 5min pause and pressure down to at least 2E-6.
+The Al deposition was done in steps evaporating 500 nm a time with 5 min pause and pressure down to at least 2 E-6 mbar before proceeding.