Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide: Difference between revisions
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==Deposition of Silicon Oxide using LPCVD== | ==Deposition of Silicon Oxide using LPCVD== | ||
The LPCVD oxide you can deposit at DTU Nanolab is called TEOS oxide. It can be made in the [[Specific Process Knowledge/Thin film deposition/ | The LPCVD oxide you can deposit at DTU Nanolab is called TEOS oxide. It can be made in the [[Specific Process Knowledge/Thin film deposition/Furnace LPCVD TEOS|LPCVD TEOS furnace]]. It is a batch process meaning you can run a batch of 13 wafers at a time. The deposition takes place at temperatures of 725 degrees Celsius. The TEOS oxide has good step coverage and hole filing/covering properties and the film thickness is very uniform over the wafer. We have two standard TEOS processes: One for depositing standard layers ~(0-1.5 µm) and one for deposition thick layers ~(1.5µm-4µm). The TEOS oxide has a dielectric constant very close to the one for thermal oxide (3.65 for TEOS). | ||
*[[/Deposition of Silicon Oxide using LPCVD TEOS|Deposition of Silicon Oxide using LPCVD TEOS]] | *[[/Deposition of Silicon Oxide using LPCVD TEOS|Deposition of Silicon Oxide using LPCVD TEOS]] | ||
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==Deposition of Silicon Oxide using e-beam evaporation== | ==Deposition of Silicon Oxide using e-beam evaporation== | ||
It is possible to e-beam evaporate silicon dioxide at Nanolab using the [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]]. You can use silicon dioxide pellets as a starting point or silicon with an oxygen flow - in the latter case we expect the resultant films to be oxygen poor. As with sputtering you can deposit on almost any material. In e-beam evaporation the deposition is line-of-sight and will be suitable for lift-off. However for 8" wafers the system is not optimized for lift-off on the full diameter of the wafer. | It is possible to e-beam evaporate silicon dioxide at Nanolab using the [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]]. You can use silicon dioxide pellets as a starting point or silicon with an oxygen flow - in the latter case we expect the resultant films to be oxygen poor. As with sputtering you can deposit on almost any material. In e-beam evaporation the deposition is line-of-sight and will be suitable for lift-off. However for 8" wafers the system is not optimized for lift-off on the full diameter of the wafer. | ||
*[[/Deposition of SiO2 in E-Beam Evaporator Temescal-2|Deposition of SiO2 using E-Beam Evaporator (10-pockets)]] | |||
==Wet SiO2 growth == | ==Wet SiO2 growth == | ||
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* Thin layers (up to 200-300 nm) | * Thin layers (up to 200-300 nm) | ||
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* Thin layers (up to | * Thin layers (up to 200 nm)* | ||
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*1,5-2 nm after 10 min. | *1,5-2 nm after 10 min. | ||
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'''*''' If you wish to deposit more than | '''*''' If you wish to deposit more than 200 nm, please talk to responsible staff or write to thinfilm@nanolab.dtu.dk | ||