LabAdviser/Process Flow/Solar cell process flow: Difference between revisions
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|Expose photoresist in aligner | |Expose photoresist in aligner | ||
|The resist layer on the wafer frontside is exposed in the aligner, with a dark field mask. Align the mask to wafer flat, and use hard contact. | |The resist layer on the wafer frontside is exposed in the aligner, with a dark field mask. Align the mask to wafer flat, and use hard contact. | ||
|Here you can see a comparison between different [[ | |Here you can see a comparison between different [[Specific Process Knowledge/Lithography/UVExposure|aligners]]. | ||
|[[image:2 lithography mask 1.jpg|250x350px|center]] | |[[image:2 lithography mask 1.jpg|250x350px|center]] | ||
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|Expose photoresist in aligner | |Expose photoresist in aligner | ||
|The wafer needs to be aligned to the mask. "Hard contact" is recommended. | |The wafer needs to be aligned to the mask. "Hard contact" is recommended. | ||
|Here you can get information about exposure doses and development times depending on different resist types, thicknesses and equipment used. [[ | |Here you can get information about exposure doses and development times depending on different resist types, thicknesses and equipment used. [[Specific Process Knowledge/Lithography/Resist#Exposure dose|Lists of exposure doses and development times.]] | ||
|[[image:5 lithography mask 2.jpg|250x350px|center]] | |[[image:5 lithography mask 2.jpg|250x350px|center]] | ||
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|Develop photoresist | |Develop photoresist | ||
|In the development step the '''exposed resist is removed,''' and a resist pattern is formed on the surface. | |In the development step the '''exposed resist is removed,''' and a resist pattern is formed on the surface. | ||
|Comparison of different [[Specific Process Knowledge/Lithography/Development|developers]]. More details on development times dependent on equipment, resist, thickness and exposure doses can be seen here:[[ | |Comparison of different [[Specific Process Knowledge/Lithography/Development|developers]]. More details on development times dependent on equipment, resist, thickness and exposure doses can be seen here:[[Specific Process Knowledge/Lithography/Resist#Exposure dose|Lists of exposure doses and development times.]] | ||
|[[image:5_4_development.JPG|250x350px|center]] | |[[image:5_4_development.JPG|250x350px|center]] | ||
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|4 point probe inspection | |4 point probe inspection | ||
|Measure the metal sheet resistance on the wafer backside with a 4 point probe. | |Measure the metal sheet resistance on the wafer backside with a 4 point probe. | ||
|[[ | |[[Specific Process Knowledge/Characterization/Four-Point Probe|4 point probe]] | ||
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