LabAdviser/Process Flow/Solar cell process flow: Difference between revisions
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<br clear="all" />A detailed process flow for the solar cell process flow, including all steps and process parameters, can be found here: | <br clear="all" />A detailed process flow for the solar cell process flow, including all steps and process parameters, can be found here: | ||
Process flow for the solar cell fabrication process as [[ | Process flow for the solar cell fabrication process as [[Media:Solar Cell process flow 2024.docx| Word-]] or [[Media:Solar Cell process flow 2024.pdf|PDF-File]]. | ||
==Process flow== | ==Process flow for a Simple Solar Cell== | ||
Beneath you can see an example of a process recipe with all process steps needed to fabricate a wafer with solar cells. In the process you will find links to the actual machines and processes described in LabAdviser, where you can get more detailed information. Before doing the processing you also have to find the right processing parameters, they are not listed here. | Beneath you can see an example of a process recipe with all process steps needed to fabricate a wafer with solar cells. In the process you will find links to the actual machines and processes described in LabAdviser, where you can get more detailed information. Before doing the processing you also have to find the right processing parameters, they are not listed here. | ||
''This is a sketchy description of how a solar cell can be fabricated (some details are omitted). | ''Please note that some of the tools mayb not be up to date in the list below. However, the word and pdf file above have been updated in May 2024.'' | ||
This is a sketchy description of how a solar cell can be fabricated (some details are omitted). | |||
[[image:Color_explanations.JPG|130x130px|center|]] | [[image:Color_explanations.JPG|130x130px|center|]] | ||
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|Expose photoresist in aligner | |Expose photoresist in aligner | ||
|The resist layer on the wafer frontside is exposed in the aligner, with a dark field mask. Align the mask to wafer flat, and use hard contact. | |The resist layer on the wafer frontside is exposed in the aligner, with a dark field mask. Align the mask to wafer flat, and use hard contact. | ||
|Here you can see a comparison between different [[ | |Here you can see a comparison between different [[Specific Process Knowledge/Lithography/UVExposure|aligners]]. | ||
|[[image:2 lithography mask 1.jpg|250x350px|center]] | |[[image:2 lithography mask 1.jpg|250x350px|center]] | ||
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|Expose photoresist in aligner | |Expose photoresist in aligner | ||
|The wafer needs to be aligned to the mask. "Hard contact" is recommended. | |The wafer needs to be aligned to the mask. "Hard contact" is recommended. | ||
|Here you can get information about exposure doses and development times depending on different resist types, thicknesses and equipment used. [[ | |Here you can get information about exposure doses and development times depending on different resist types, thicknesses and equipment used. [[Specific Process Knowledge/Lithography/Resist#Exposure dose|Lists of exposure doses and development times.]] | ||
|[[image:5 lithography mask 2.jpg|250x350px|center]] | |[[image:5 lithography mask 2.jpg|250x350px|center]] | ||
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|Develop photoresist | |Develop photoresist | ||
|In the development step the '''exposed resist is removed,''' and a resist pattern is formed on the surface. | |In the development step the '''exposed resist is removed,''' and a resist pattern is formed on the surface. | ||
|Comparison of different [[Specific Process Knowledge/Lithography/Development|developers]]. More details on development times dependent on equipment, resist, thickness and exposure doses can be seen here:[[ | |Comparison of different [[Specific Process Knowledge/Lithography/Development|developers]]. More details on development times dependent on equipment, resist, thickness and exposure doses can be seen here:[[Specific Process Knowledge/Lithography/Resist#Exposure dose|Lists of exposure doses and development times.]] | ||
|[[image:5_4_development.JPG|250x350px|center]] | |[[image:5_4_development.JPG|250x350px|center]] | ||
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|Stylus profiler inspection | |Stylus profiler inspection | ||
|The step height of the SiO<sub>2</sub> in the doped and undoped areas are measured after the SiO<sub>2</sub> etch. | |The step height of the SiO<sub>2</sub> in the doped and undoped areas are measured after the SiO<sub>2</sub> etch. | ||
|[[Specific Process Knowledge/Characterization/ | |[[Specific Process Knowledge/Characterization/Topographic measurement|Stylus profilers]]. The different stylus profilers and their features are described. | ||
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|Stylus profiler inspection | |Stylus profiler inspection | ||
|Check the final result by measuring the profile of the aluminium structures on the wafer frontside with a stylus profilometer. | |Check the final result by measuring the profile of the aluminium structures on the wafer frontside with a stylus profilometer. | ||
|[[Specific Process Knowledge/Characterization/ | |[[Specific Process Knowledge/Characterization/Topographic measurement|Stylus profilers]] | ||
|[[image: Profile_After_lift_off_solar cell.JPG|250x350px|center]] | |[[image: Profile_After_lift_off_solar cell.JPG|250x350px|center]] | ||
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|4 point probe inspection | |4 point probe inspection | ||
|Measure the metal sheet resistance on the wafer backside with a 4 point probe. | |Measure the metal sheet resistance on the wafer backside with a 4 point probe. | ||
|[[ | |[[Specific Process Knowledge/Characterization/Four-Point Probe|4 point probe]] | ||
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