Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions
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=SiO2 trench etching with Cr mask= | =SiO2 trench etching with Cr mask= | ||
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*Pressure:Fully open APC valve (<2 mTorr) | *Pressure:Fully open APC valve (<2 mTorr) | ||
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A' | *Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A' | ||
|After some major chemical cleans I could not repeat the results of C10834. I need to increase the | |After some major chemical cleans I could not repeat the results of C10834. I need to increase the C4F8 to fairly match the results | ||
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<gallery caption=" C12508: SiO2 etch with Cr mask on wafer piece on Si carrier 50 min etch, EM:0/0 H2:0sccm, C4F8:11.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 25W, coil power:300W" perrow="6" widths="200px" heights="150px"> | <gallery caption=" C12508: SiO2 etch with Cr mask on wafer piece on Si carrier 50 min etch, EM:0/0 H2:0sccm, C4F8:11.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 25W, coil power:300W" perrow="6" widths="200px" heights="150px"> | ||