Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions
mNo edit summary |
|||
| (3 intermediate revisions by one other user not shown) | |||
| Line 4: | Line 4: | ||
=SiO2 trench etching with Cr mask= | =SiO2 trench etching with Cr mask= | ||
{| border="2" cellspacing="2" cellpadding="3" | {| border="2" cellspacing="2" cellpadding="3" | ||
| Line 595: | Line 594: | ||
File:C10844_13.jpg | File:C10844_13.jpg | ||
</gallery> | </gallery> | ||
|- style="vertical-align:top;" | |||
| | |||
*Coil Power [W]:300 | |||
*'''Platen Power [W]: 25''' | |||
*Platen temperature [<sup>o</sup>C]: 20 | |||
*H2 flow [sccm]:0 | |||
*O2 flow [sccm]: 10 | |||
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 11.5 | |||
*He flow [sccm]:100 | |||
*Pressure:Fully open APC valve (<2 mTorr) | |||
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A' | |||
|After some major chemical cleans I could not repeat the results of C10834. I need to increase the C4F8 to fairly match the results | |||
| | |||
<gallery caption=" C12508: SiO2 etch with Cr mask on wafer piece on Si carrier 50 min etch, EM:0/0 H2:0sccm, C4F8:11.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 25W, coil power:300W" perrow="6" widths="200px" heights="150px"> | <gallery caption=" C12508: SiO2 etch with Cr mask on wafer piece on Si carrier 50 min etch, EM:0/0 H2:0sccm, C4F8:11.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 25W, coil power:300W" perrow="6" widths="200px" heights="150px"> | ||
File:C12508_03__14.jpg | File:C12508_03__14.jpg | ||
| Line 606: | Line 617: | ||
File:C12508_03__12.jpg | File:C12508_03__12.jpg | ||
</gallery> | </gallery> | ||
|} | |||