Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch/Cr mask: Difference between revisions
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=SiO2 trench etching with Cr mask= | =SiO2 trench etching with Cr mask= | ||
{| border="2" cellspacing="2" cellpadding="3" | {| border="2" cellspacing="2" cellpadding="3" | ||
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File:C010184tilt20plasmaO2_07.jpg| tilt 20 degrees | File:C010184tilt20plasmaO2_07.jpg| tilt 20 degrees | ||
File:C010184tilt20plasmaO2_05.jpg| tilt 20 degrees | File:C010184tilt20plasmaO2_05.jpg| tilt 20 degrees | ||
File:C1018405.jpg|After RCA clean | |||
File:C1018402.jpg|After RCA clean | |||
File:C1018403.jpg|After RCA clean | |||
</gallery> | |||
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File:C10844_13.jpg | File:C10844_13.jpg | ||
</gallery> | </gallery> | ||
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*Coil Power [W]:300 | |||
*'''Platen Power [W]: 25''' | |||
*Platen temperature [<sup>o</sup>C]: 20 | |||
*H2 flow [sccm]:0 | |||
*O2 flow [sccm]: 10 | |||
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 11.5 | |||
*He flow [sccm]:100 | |||
*Pressure:Fully open APC valve (<2 mTorr) | |||
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A' | |||
|After some major chemical cleans I could not repeat the results of C10834. I need to increase the C4F8 to fairly match the results | |||
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<gallery caption=" C12508: SiO2 etch with Cr mask on wafer piece on Si carrier 50 min etch, EM:0/0 H2:0sccm, C4F8:11.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 25W, coil power:300W" perrow="6" widths="200px" heights="150px"> | |||
File:C12508_03__14.jpg | |||
File:C12508_03__02.jpg | |||
File:C12508_03__04.jpg | |||
File:C12508_03__06.jpg | |||
File:C12508_03__07.jpg | |||
File:C12508_03__09.jpg | |||
File:C12508_03__12.jpg | |||
</gallery> | |||
|} | |} | ||