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=SiO2 trench etching with Cr mask=
=SiO2 trench etching with Cr mask=
{| border="2" cellspacing="2" cellpadding="3"  
{| border="2" cellspacing="2" cellpadding="3"  
!Start parameters, variations noted in the gallery headline
!Start parameters, variations noted in the gallery headline
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|'''Temporary conclusions on how the process parameters affect the results in this study:'''
|'''Temporary conclusions on how the process parameters affect the results in this study:'''
|'''What process parameters affect the results?'''
|'''What process parameters affect the results?'''
|-
|- style="vertical-align:top;"
|
|
*Going from full wafer to small piece on Si carrier:  
*Going from full wafer to small piece on Si carrier:  
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|}
|}
===Profile SEM images===
===Profile SEM images===
{| border="2" cellspacing="2" cellpadding="3" style="width: 100%;"
{| border="2" cellspacing="2" cellpadding="3" style="width: 100%;"  
!style="width: 20%"|Recipe settings
!style="width: 20%"|Recipe settings
!style="width: 10%"|Comments
!style="width: 10%"|Comments
!style="width: 70%"|SEM gallery
!style="width: 70%"|SEM gallery
|-
|- style="vertical-align:top;"
|
|
*'''On 6" wafer'''
*'''On 6" wafer'''
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File:C09721_center_22.jpg
File:C09721_center_22.jpg
</gallery>
</gallery>
|-
|- style="vertical-align:top;"
|
|
*'''Piece on Si carrier'''
*'''Piece on Si carrier'''
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File:C10022_03__12.jpg
File:C10022_03__12.jpg
</gallery>
</gallery>
|-
|- style="vertical-align:top;"
|
|
*Coil Power [W]:2500
*Coil Power [W]:2500
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File:C10025_03__01.jpg
File:C10025_03__01.jpg
</gallery>
</gallery>
|-
|- style="vertical-align:top;"
|
|
*Coil Power [W]:2500
*Coil Power [W]:2500
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File:C10026_03__10.jpg
File:C10026_03__10.jpg
</gallery>
</gallery>
|-
|- style="vertical-align:top;"
|
|
*Coil Power [W]:2500
*Coil Power [W]:2500
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File:C010082tilt30_13.jpg
File:C010082tilt30_13.jpg
</gallery>
</gallery>
|-
|- style="vertical-align:top;"
|
|
*'''Coil Power [W]:1200'''
*'''Coil Power [W]:1200'''
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File:C10084_03.jpg
File:C10084_03.jpg
</gallery>
</gallery>
|-
|- style="vertical-align:top;"
|
|
*Coil Power [W]:1200
*Coil Power [W]:1200
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File:C10093_03__01.jpg
File:C10093_03__01.jpg
</gallery>
</gallery>
|-
|- style="vertical-align:top;"
|
|
*Coil Power [W]:1200
*Coil Power [W]:1200
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File:C10101_03__14.jpg
File:C10101_03__14.jpg
</gallery>
</gallery>
|-
|- style="vertical-align:top;"
|
|
*'''Coil Power [W]:1800'''
*'''Coil Power [W]:1800'''
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File:C10102_03__16.jpg
File:C10102_03__16.jpg
</gallery>
</gallery>
|-
|- style="vertical-align:top;"
|
|
*Coil Power [W]:1800
*Coil Power [W]:1800
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File:C10110_12.jpg
File:C10110_12.jpg
</gallery>
</gallery>
|-
|- style="vertical-align:top;"
|
|
*'''Coil Power [W]:1200'''
*'''Coil Power [W]:1200'''
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File:C10119_11.jpg
File:C10119_11.jpg
</gallery>
</gallery>
|-
|- style="vertical-align:top;"
|
|
*Coil Power [W]:1200
*Coil Power [W]:1200
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File:Contour Plot Y32 EM_02_30 blue to red.jpg| Etch on none patterned wafer, Uniformity: +- 6.4%
File:Contour Plot Y32 EM_02_30 blue to red.jpg| Etch on none patterned wafer, Uniformity: +- 6.4%
</gallery>
</gallery>
|-
|- style="vertical-align:top;"
|
|
*'''Coil Power [W]:1800'''
*'''Coil Power [W]:1800'''
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|Running 1800W/150W at increased time to etch down to 1500 nm.  
|Running 1800W/150W at increased time to etch down to 1500 nm.  
|
|
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier '''10 min etch''', H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W" perrow="6" widths="200px" heights="150px">
<gallery caption="C10161 SiO2 etch with Cr mask on wafer piece on Si carrier '''10 min etch''', H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W" perrow="6" widths="200px" heights="150px">
File:C10161_01.jpg
File:C10161_01.jpg
File:C10161_03.jpg
File:C10161_03.jpg
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File:C010161tilt_04.jpg
File:C010161tilt_04.jpg
</gallery>
</gallery>
|-
|- style="vertical-align:top;"
|
|
*'''Coil Power [W]:1200'''
*'''Coil Power [W]:1200'''
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|Repeating the 1200W/100W recipes at 14 min but without the EM coils. For this recipe the uniformity over the wafer improved from removing the EM coils, so no need for those and now the recipe could run 14 min without damaging the hardware. The profile looked as before. After removing the Cr I looked from the top and with a tilted view and saw the the sidewall roughness was very bad.   
|Repeating the 1200W/100W recipes at 14 min but without the EM coils. For this recipe the uniformity over the wafer improved from removing the EM coils, so no need for those and now the recipe could run 14 min without damaging the hardware. The profile looked as before. After removing the Cr I looked from the top and with a tilted view and saw the the sidewall roughness was very bad.   
|
|
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.9mTorr; platen power 100W, coil power:1200W" perrow="7" widths="200px" heights="150px">
<gallery perrow="7" widths="200px" heights="150px" caption="C10184: SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.9mTorr; platen power 100W, coil power:1200W">
File:C10184_01.jpg
File:C10184_01.jpg
File:C10184_05.jpg
File:C10184_05.jpg
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File:C010184tilt20plasmaO2_07.jpg| tilt 20 degrees
File:C010184tilt20plasmaO2_07.jpg| tilt 20 degrees
File:C010184tilt20plasmaO2_05.jpg| tilt 20 degrees
File:C010184tilt20plasmaO2_05.jpg| tilt 20 degrees
File:C1018405.jpg|After RCA clean
File:C1018402.jpg|After RCA clean
File:C1018403.jpg|After RCA clean
</gallery>
</gallery>
|-
|- style="vertical-align:top;"
|
|
*'''Coil Power [W]:2500'''
*'''Coil Power [W]:2500'''
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File:C10381_30dg_21.jpg
File:C10381_30dg_21.jpg
</gallery>
</gallery>
|-
|- style="vertical-align:top;"
|
|
*Coil Power [W]:2500
*Coil Power [W]:2500
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File:C10393_16.jpg
File:C10393_16.jpg
</gallery>
</gallery>
|-
|- style="vertical-align:top;"
|
|
*'''14 min'''
*'''14 min'''
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File:C10399_13.jpg
File:C10399_13.jpg
</gallery>
</gallery>
|-
|- style="vertical-align:top;"
|
|
*'''Back to start setting without EM coils - 14 min'''
*'''Back to start setting without EM coils - 14 min'''
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File:C10576_17.jpg
File:C10576_17.jpg
</gallery>
</gallery>
|-
|- style="vertical-align:top;"
|
|
*'''Coil Power [W]:600'''
*'''Coil Power [W]:600'''
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File:C10751_12.jpg
File:C10751_12.jpg
</gallery>
</gallery>
|-
|- style="vertical-align:top;"
|
|
*'''Coil Power [W]:300'''
*'''Coil Power [W]:300'''
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File:C10752_10.jpg
File:C10752_10.jpg
</gallery>
</gallery>
|-
|- style="vertical-align:top;"
|
|
*'''45 min'''
*'''45 min'''
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File:C10834T_22.jpg
File:C10834T_22.jpg
</gallery>
</gallery>
|-
|- style="vertical-align:top;"
|
|
*Coil Power [W]:300
*Coil Power [W]:300
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File:C10844_13.jpg
File:C10844_13.jpg
</gallery>
</gallery>
|- style="vertical-align:top;"
|
*Coil Power [W]:300
*'''Platen Power [W]: 25'''
*Platen temperature [<sup>o</sup>C]: 20
*H2 flow [sccm]:0
*O2 flow [sccm]: 10
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 11.5
*He flow [sccm]:100
*Pressure:Fully open APC valve (<2 mTorr)
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'
|After some major chemical cleans I could not repeat the results of C10834. I need to increase the C4F8 to fairly match the results
|
<gallery caption=" C12508: SiO2 etch with Cr mask on wafer piece on Si carrier 50 min etch, EM:0/0 H2:0sccm, C4F8:11.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 25W, coil power:300W" perrow="6" widths="200px" heights="150px">
File:C12508_03__14.jpg
File:C12508_03__02.jpg
File:C12508_03__04.jpg
File:C12508_03__06.jpg
File:C12508_03__07.jpg
File:C12508_03__09.jpg
File:C12508_03__12.jpg
</gallery>
|}
|}
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