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=SiO2 trench etching with Cr mask=
=SiO2 trench etching with Cr mask=
{| border="2" cellspacing="2" cellpadding="3"  
{| border="2" cellspacing="2" cellpadding="3"  
!Start parameters, variations noted in the gallery headline
!Start parameters, variations noted in the gallery headline
Line 50: Line 52:
|'''Temporary conclusions on how the process parameters affect the results in this study:'''
|'''Temporary conclusions on how the process parameters affect the results in this study:'''
|'''What process parameters affect the results?'''
|'''What process parameters affect the results?'''
|-
|- style="vertical-align:top;"
|
|
*Going from full wafer to small piece on Si carrier:  
*Going from full wafer to small piece on Si carrier:  
Line 84: Line 86:
|}
|}
===Profile SEM images===
===Profile SEM images===
{| border="2" cellspacing="2" cellpadding="3"  
{| border="2" cellspacing="2" cellpadding="3" style="width: 100%;"  
!Recipe settings
!style="width: 20%"|Recipe settings
!SEM gallery
!style="width: 10%"|Comments
|-
!style="width: 70%"|SEM gallery
|- style="vertical-align:top;"
|
|
*'''On 6" wafer'''
*Coil Power [W]:2500
*Coil Power [W]:2500
*Platen Power [W]: 200
*Platen Power [W]: 200
Line 98: Line 102:
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'  
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'  
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
|text
|
|
<gallery caption="SiO2 etch with Cr mask on full wafer 6 min etch" perrow="6" widths="200px" heights="150px">
<gallery caption="SiO2 etch with Cr mask on full wafer 6 min etch" perrow="6" widths="200px" heights="150px">
Line 108: Line 113:
File:C09721_center_22.jpg
File:C09721_center_22.jpg
</gallery>
</gallery>
|-
|- style="vertical-align:top;"
|
|
*'''Piece on Si carrier'''
*Coil Power [W]:2500
*Coil Power [W]:2500
*Platen Power [W]: 200
*Platen Power [W]: 200
Line 119: Line 125:
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'  
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'  
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
|More sidewall passivation on chip than on full wafer
|
|
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch" perrow="6" widths="200px" heights="150px">
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch" perrow="6" widths="200px" heights="150px">
Line 129: Line 136:
File:C10022_03__12.jpg
File:C10022_03__12.jpg
</gallery>
</gallery>
|-
|- style="vertical-align:top;"
|
|
*Coil Power [W]:2500
*Coil Power [W]:2500
*Platen Power [W]: 200
*Platen Power [W]: 200
*Platen temperature [<sup>o</sup>C]: 20
*Platen temperature [<sup>o</sup>C]: 20
*H2 flow [sccm]:0
*'''H2 flow [sccm]:0'''
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 25.6
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 25.6
*He flow [sccm]:448.7
*He flow [sccm]:448.7
Line 140: Line 147:
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'  
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'  
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
|Less sidewall passivation from removing the H2
|
|
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm" perrow="6" widths="200px" heights="150px">
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm" perrow="6" widths="200px" heights="150px">
Line 149: Line 157:
File:C10025_03__01.jpg
File:C10025_03__01.jpg
</gallery>
</gallery>
|-
|- style="vertical-align:top;"
|
|
*Coil Power [W]:2500
*Coil Power [W]:2500
Line 155: Line 163:
*Platen temperature [<sup>o</sup>C]: 20
*Platen temperature [<sup>o</sup>C]: 20
*H2 flow [sccm]:0
*H2 flow [sccm]:0
*O2 flow [sccm]: 5
*'''O2 flow [sccm]: 5'''
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 25.6
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 25.6
*He flow [sccm]:448.7
*He flow [sccm]:448.7
Line 161: Line 169:
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'  
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'  
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
|Not a large effect from adding a little O2
|
|
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, O2:5sccm" perrow="6" widths="200px" heights="150px">
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, O2:5sccm" perrow="6" widths="200px" heights="150px">
Line 170: Line 179:
File:C10026_03__10.jpg
File:C10026_03__10.jpg
</gallery>
</gallery>
|-
|- style="vertical-align:top;"
|
|
*Coil Power [W]:2500
*Coil Power [W]:2500
Line 176: Line 185:
*Platen temperature [<sup>o</sup>C]: 20
*Platen temperature [<sup>o</sup>C]: 20
*H2 flow [sccm]:0
*H2 flow [sccm]:0
*O2 flow [sccm]: 0
*'''O2 flow [sccm]: 0'''
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 13.0
*'''C<sub>4</sub>F<sub>8</sub> flow [sccm]: 13.0'''
*He flow [sccm]:225
*'''He flow [sccm]:225'''
*Pressure:Fully open APC valve (3.35 mTorr)
*Pressure:Fully open APC valve ('''3.35 mTorr''')
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'  
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'  
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
|Reducing total flow rate and thereby the pressure gives less passivation/redeposition. Sidewall roughness not so bad.
|
|
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:225sccm, Pressure:3.35mTorr" perrow="6" widths="200px" heights="150px">
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:225sccm, Pressure:3.35mTorr" perrow="6" widths="200px" heights="150px">
Line 190: Line 200:
File:C10082_03.jpg
File:C10082_03.jpg
File:C10082_01.jpg
File:C10082_01.jpg
File:C010082top_07.jpg
File:C010082top_03.jpg
File:C010082tilt30_13.jpg
</gallery>
</gallery>
|-
|- style="vertical-align:top;"
|
|
*Coil Power [W]:1200
*'''Coil Power [W]:1200'''
*Platen Power [W]: 150
*'''Platen Power [W]: 150'''
*Platen temperature [<sup>o</sup>C]: 20
*Platen temperature [<sup>o</sup>C]: 20
*H2 flow [sccm]:0
*H2 flow [sccm]:0
Line 203: Line 216:
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'  
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'  
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
|Reducing the coil power a lot and platen power a little gives more sidewall passivation/redeposition
|
|
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:225sccm, Pressure:3.35mTorr; platen power 150W, coil power:1200W" perrow="6" widths="200px" heights="150px">
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:225sccm, Pressure:3.35mTorr; platen power 150W, coil power:1200W" perrow="6" widths="200px" heights="150px">
Line 212: Line 226:
File:C10084_03.jpg
File:C10084_03.jpg
</gallery>
</gallery>
|-
|- style="vertical-align:top;"
|
|
*Coil Power [W]:1200
*Coil Power [W]:1200
Line 218: Line 232:
*Platen temperature [<sup>o</sup>C]: 20
*Platen temperature [<sup>o</sup>C]: 20
*H2 flow [sccm]:0
*H2 flow [sccm]:0
*O2 flow [sccm]: 10
*'''O2 flow [sccm]: 10'''
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 13.0
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 13.0
*He flow [sccm]:215
*'''He flow [sccm]:215'''
*Pressure:Fully open APC valve (3.35 mTorr)
*Pressure:Fully open APC valve (3.35 mTorr)
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'  
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'  
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
|Adding oxygen reduces the passivation/redeposition
|
|
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:215sccm O2:10sccm, Pressure:3.6mTorr; platen power 150W, coil power:1200W" perrow="6" widths="200px" heights="150px">
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:215sccm O2:10sccm, Pressure:3.6mTorr; platen power 150W, coil power:1200W" perrow="6" widths="200px" heights="150px">
Line 233: Line 248:
File:C10093_03__01.jpg
File:C10093_03__01.jpg
</gallery>
</gallery>
|-
|- style="vertical-align:top;"
|
|
*Coil Power [W]:1200
*Coil Power [W]:1200
Line 239: Line 254:
*Platen temperature [<sup>o</sup>C]: 20
*Platen temperature [<sup>o</sup>C]: 20
*H2 flow [sccm]:0
*H2 flow [sccm]:0
*O2 flow [sccm]: 20
*'''O2 flow [sccm]: 20'''
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 13.0
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 13.0
*He flow [sccm]:205
*'''He flow [sccm]:205'''
*Pressure:Fully open APC valve (3.35 mTorr)
*Pressure:Fully open APC valve (3.35 mTorr)
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'  
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'  
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
|Adding more oxygen reduces further the passivation/redeposition but some trenching appears.
|
|
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1200W" perrow="7" widths="200px" heights="150px">
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1200W" perrow="7" widths="200px" heights="150px">
Line 255: Line 271:
File:C10101_03__14.jpg
File:C10101_03__14.jpg
</gallery>
</gallery>
|-
|- style="vertical-align:top;"
|
|
*Coil Power [W]:1800
*'''Coil Power [W]:1800'''
*Platen Power [W]: 150
*Platen Power [W]: 150
*Platen temperature [<sup>o</sup>C]: 20
*Platen temperature [<sup>o</sup>C]: 20
*H2 flow [sccm]:0
*H2 flow [sccm]:0
*O2 flow [sccm]: 10
*'''O2 flow [sccm]: 10'''
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 13.0
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 13.0
*He flow [sccm]:215
*'''He flow [sccm]:215'''
*Pressure:Fully open APC valve (3.35 mTorr)
*Pressure:Fully open APC valve (3.35 mTorr)
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'  
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'  
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
|Increasing coil power reduces trenching but increases passivation/redeposition
|
|
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:215sccm O2:10sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W" perrow="6" widths="200px" heights="150px">
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:215sccm O2:10sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W" perrow="6" widths="200px" heights="150px">
Line 276: Line 293:
File:C10102_03__16.jpg
File:C10102_03__16.jpg
</gallery>
</gallery>
|-
|- style="vertical-align:top;"
|
|
*Coil Power [W]:1800
*Coil Power [W]:1800
Line 282: Line 299:
*Platen temperature [<sup>o</sup>C]: 20
*Platen temperature [<sup>o</sup>C]: 20
*H2 flow [sccm]:0
*H2 flow [sccm]:0
*O2 flow [sccm]: 20
*'''O2 flow [sccm]: 20'''
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 13.0
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 13.0
*He flow [sccm]:205
*'''He flow [sccm]:205'''
*Pressure:Fully open APC valve (3.6 mTorr)
*Pressure:Fully open APC valve (3.6 mTorr)
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'  
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'  
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN
|Adding more O2 reduces the sidewall passivation/redeposition
|
|
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W" perrow="6" widths="200px" heights="150px">
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W" perrow="6" widths="200px" heights="150px">
Line 296: Line 314:
File:C10110_12.jpg
File:C10110_12.jpg
</gallery>
</gallery>
|-
|- style="vertical-align:top;"
|
|
*Coil Power [W]:1800
*'''Coil Power [W]:1200'''
*Platen Power [W]: 150
*'''Platen Power [W]: 100'''
*Platen temperature [<sup>o</sup>C]: 20
*Platen temperature [<sup>o</sup>C]: 20
*H2 flow [sccm]:0
*H2 flow [sccm]:0
Line 308: Line 326:
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'  
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'  
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN  
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN  
|Running with the lower coil power and reducing the platen power also seems to reduced the sidewall passivatin/redeposition, but etch rate goes down
|
|
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W" perrow="7" widths="200px" heights="150px">
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W" perrow="7" widths="200px" heights="150px">
Line 317: Line 336:
File:C10119_11.jpg
File:C10119_11.jpg
</gallery>
</gallery>
|-
|- style="vertical-align:top;"
|
|
*Coil Power [W]:1200
*Coil Power [W]:1200
Line 329: Line 348:
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'  
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'  
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN  
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN  
|Repeating with longer etch time to etch 1500 nm down. Unfortunately this damaged the hardware due to the EM coils getting too hot. 
|
|
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch (PLEASE DO NOT REPEAT THIS LONG TIME), H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W" perrow="7" widths="200px" heights="150px">
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier '''14 min etch''' (PLEASE DO NOT REPEAT THIS LONG TIME), H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W" perrow="7" widths="200px" heights="150px">
File:C10160_02.jpg
File:C10160_02.jpg
File:C10160_06.jpg
File:C10160_06.jpg
Line 339: Line 359:
File:Contour Plot Y32 EM_02_30 blue to red.jpg| Etch on none patterned wafer, Uniformity: +- 6.4%
File:Contour Plot Y32 EM_02_30 blue to red.jpg| Etch on none patterned wafer, Uniformity: +- 6.4%
</gallery>
</gallery>
|-
|- style="vertical-align:top;"
|
|
*Coil Power [W]:1800
*'''Coil Power [W]:1800'''
*Platen Power [W]: 150
*'''Platen Power [W]: 150'''
*Platen temperature [<sup>o</sup>C]: 20
*Platen temperature [<sup>o</sup>C]: 20
*H2 flow [sccm]:0
*H2 flow [sccm]:0
Line 351: Line 371:
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'  
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'2 A' / '30 A'  
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN  
*PLEASE DO NOT RUN WITH THESE SETTINGS FOR MORE THAN 6 MIN  
|Running 1800W/150W at increased time to etch down to 1500 nm.
|
|
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 10 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W" perrow="6" widths="200px" heights="150px">
<gallery caption="C10161 SiO2 etch with Cr mask on wafer piece on Si carrier '''10 min etch''', H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W" perrow="6" widths="200px" heights="150px">
File:C10161_01.jpg
File:C10161_01.jpg
File:C10161_03.jpg
File:C10161_03.jpg
Line 359: Line 380:
File:C10161_09.jpg
File:C10161_09.jpg
File:C10161_11.jpg
File:C10161_11.jpg
File:C010161top_01.jpg
File:C010161tilt_04.jpg
</gallery>
</gallery>
|-
|- style="vertical-align:top;"
|
|
*Coil Power [W]:1200
*'''Coil Power [W]:1200'''
*Platen Power [W]: 100
*'''Platen Power [W]: 100'''
*Platen temperature [<sup>o</sup>C]: 20
*Platen temperature [<sup>o</sup>C]: 20
*H2 flow [sccm]:0
*H2 flow [sccm]:0
Line 370: Line 393:
*He flow [sccm]:205
*He flow [sccm]:205
*Pressure:Fully open APC valve (3.9 mTorr)
*Pressure:Fully open APC valve (3.9 mTorr)
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'  
*'''Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A''''
|Repeating the 1200W/100W recipes at 14 min but without the EM coils. For this recipe the uniformity over the wafer improved from removing the EM coils, so no need for those and now the recipe could run 14 min without damaging the hardware. The profile looked as before. After removing the Cr I looked from the top and with a tilted view and saw the the sidewall roughness was very bad. 
|
|
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.9mTorr; platen power 100W, coil power:1200W" perrow="7" widths="200px" heights="150px">
<gallery perrow="7" widths="200px" heights="150px" caption="C10184: SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.9mTorr; platen power 100W, coil power:1200W">
File:C10184_01.jpg
File:C10184_01.jpg
File:C10184_05.jpg
File:C10184_05.jpg
Line 380: Line 404:
File:C10184_12.jpg
File:C10184_12.jpg
File:Contour Plot Y33 EM_0_0 blue to red.jpg| Etch on none patterned wafer, Uniformity: +-1.7%
File:Contour Plot Y33 EM_0_0 blue to red.jpg| Etch on none patterned wafer, Uniformity: +-1.7%
File:C010184top_01.jpg
File:C010184top_04.jpg
File:C010184tilt30plasmaO2_02.jpg| tilt 30 degrees
File:C010184tilt30plasmaO2_01.jpg| tilt 30 degrees
File:C010184tilt20plasmaO2_07.jpg| tilt 20 degrees
File:C010184tilt20plasmaO2_05.jpg| tilt 20 degrees
File:C1018405.jpg|After RCA clean
File:C1018402.jpg|After RCA clean
File:C1018403.jpg|After RCA clean
</gallery>
</gallery>
|-
|- style="vertical-align:top;"
|
|
*Coil Power [W]:2500
*'''Coil Power [W]:2500'''
*Platen Power [W]: 100
*Platen Power [W]: 100
*Platen temperature [<sup>o</sup>C]: 20
*Platen temperature [<sup>o</sup>C]: 20
Line 392: Line 425:
*Pressure:Fully open APC valve (3.9 mTorr)
*Pressure:Fully open APC valve (3.9 mTorr)
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'  
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'  
|Tried high coil power and low platen power. This seemed to give som undercutting,especially on the narrow lines. The smallest has been etched away. The etch rate was very low
|
|
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.9mTorr; platen power 100W, coil power:2500W" perrow="7" widths="200px" heights="150px">
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.9mTorr; platen power 100W, coil power:2500W" perrow="7" widths="200px" heights="150px">
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File:C10381_30dg_21.jpg
File:C10381_30dg_21.jpg
</gallery>
</gallery>
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*Coil Power [W]:2500
*Coil Power [W]:2500
*Platen Power [W]: 200
*'''Platen Power [W]: 200'''
*Platen temperature [<sup>o</sup>C]: 20
*Platen temperature [<sup>o</sup>C]: 20
*H2 flow [sccm]:0
*H2 flow [sccm]:0
*O2 flow [sccm]: 0
*'''O2 flow [sccm]: 0'''
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 13.0
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 13.0
*He flow [sccm]:225
*He flow [sccm]:225
*Pressure:Fully open APC valve (3.9 mTorr)
*Pressure:Fully open APC valve (3.9 mTorr)
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'  
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'  
|Increasing the platen power and and removing the oxygen helped on the under cutting but the lines are still very narrow at the bottom. It also increased the etch rate
|
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<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:225sccm O2:0sccm, Pressure:3.9mTorr; platen power 200W, coil power:2500W" perrow="7" widths="200px" heights="150px">
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:225sccm O2:0sccm, Pressure:3.9mTorr; platen power 200W, coil power:2500W" perrow="7" widths="200px" heights="150px">
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File:C10393_16.jpg
File:C10393_16.jpg
</gallery>
</gallery>
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|Text
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*'''14 min'''
*Coil Power [W]:2500
*Platen Power [W]: 200
*Platen temperature [<sup>o</sup>C]: 20
*H2 flow [sccm]:0
*O2 flow [sccm]: 20
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 13.0
*He flow [sccm]:205
*Pressure:Fully open APC valve (3.9 mTorr)
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'
|Adding the oxygen again further increased the etch rate and reduced the CD (Critical Dimension) of the Cr mask.
|
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<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.9mTorr; platen power 200W, coil power:2500W" perrow="7" widths="200px" heights="150px">
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.9mTorr; platen power 200W, coil power:2500W" perrow="7" widths="200px" heights="150px">
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File:C10399_13.jpg
File:C10399_13.jpg
</gallery>
</gallery>
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|Text
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*'''Back to start setting without EM coils - 14 min'''
*Coil Power [W]:2500
*Platen Power [W]: 200
*Platen temperature [<sup>o</sup>C]: 20
*H2 flow [sccm]:25.6
*O2 flow [sccm]: 0
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 25.6
*He flow [sccm]:448.7
*Pressure:Fully open APC valve (8-9 mTorr)
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'
|I repeated the start setting but without the EM coils. This gives a very none uniform etch over the wafer where in some parts it deposites instead of etching. The profile of 800 nm oitch look fairly good but a closer look reveals the the sidewall is very rough from either redeposition or polymerization. this cannot be removed with a O2 plasma.
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<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0" perrow="7" widths="200px" heights="150px">
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0" perrow="7" widths="200px" heights="150px">
File:C10576_10.jpg
File:C10576_08.jpg
File:C10576_06.jpg
File:C10576_02.jpg
File:C10576_02.jpg
File:C10576_01.jpg
File:C10576_04.jpg
File:C10576_04.jpg
File:C10576_01.jpg
File:C10576_06.jpg
File:C10576_08.jpg
File:C10576_10.jpg
File:C10576_19.jpg
File:C10576_22.jpg
File:C10576_22.jpg
File:C10576_19.jpg
File:C10576_17.jpg
File:C10576_17.jpg
</gallery>
</gallery>
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|Text
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*'''Coil Power [W]:600'''
*'''Platen Power [W]: 50'''
*Platen temperature [<sup>o</sup>C]: 20
*H2 flow [sccm]:0
*'''O2 flow [sccm]: 10'''
*'''C<sub>4</sub>F<sub>8</sub> flow [sccm]: 6.5'''
*'''He flow [sccm]:100'''
*Pressure:Fully open APC valve ('''<2 mTorr''')
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'
|Due to the large sidewall roughness I decided to try and run at lower powers because it looked at some images like an ionbonbardment effect. First try with 600W/50W. The profile looks fairly good but still with some sidewall roughness. there is also some trenching and the Cr mask looks has a facet all the way down to the SiO2. The is also some bowing.
|
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<gallery caption=" C10751: SiO2 etch with Cr mask on wafer piece on Si carrier 20 min etch, EM:0/0 H2:0sccm, C4F8:6.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 50W, coil power:600W" perrow="7" widths="200px" heights="150px">
<gallery caption=" C10751: SiO2 etch with Cr mask on wafer piece on Si carrier 20 min etch, EM:0/0 H2:0sccm, C4F8:6.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 50W, coil power:600W" perrow="7" widths="200px" heights="150px">
File:C10751_02.jpg
File:C10751_05.jpg
File:C10751_07.jpg
File:C10751_09.jpg
File:C10751_11.jpg
File:C10751_12.jpg
File:C10751_12.jpg
File:C10751_11.jpg
File:C10751_09.jpg
File:C10751_07.jpg
File:C10751_05.jpg
File:C10751_02.jpg
</gallery>
</gallery>
|-
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|Text
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*'''Coil Power [W]:300'''
*'''Platen Power [W]: 25'''
*Platen temperature [<sup>o</sup>C]: 20
*H2 flow [sccm]:0
*O2 flow [sccm]: 10
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 6.5
*He flow [sccm]:100
*Pressure:Fully open APC valve (<2 mTorr)
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'
|Even lower powers: 300W/25W. The profiles looks better with less roughness but also mush slower etch rate, so not as deep as the previous.
|
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<gallery caption=" C10752: SiO2 etch with Cr mask on wafer piece on Si carrier 30 min etch, EM:0/0 H2:0sccm, C4F8:6.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 25W, coil power:300W" perrow="6" widths="200px" heights="150px">
<gallery caption=" C10752: SiO2 etch with Cr mask on wafer piece on Si carrier 30 min etch, EM:0/0 H2:0sccm, C4F8:6.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 25W, coil power:300W" perrow="6" widths="200px" heights="150px">
File:C10752_01.jpg
File:C10752_03.jpg
File:C10752_05.jpg
File:C10752_07.jpg
File:C10752_09.jpg
File:C10752_09.jpg
File:C10752_07.jpg
File:C10752_05.jpg
File:C10752_03.jpg
File:C10752_01.jpg
File:C10752_10.jpg
File:C10752_10.jpg
</gallery>
</gallery>
|-
|- style="vertical-align:top;"
|Text
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*'''45 min'''
*Coil Power [W]:300
*Platen Power [W]: 25
*Platen temperature [<sup>o</sup>C]: 20
*H2 flow [sccm]:0
*O2 flow [sccm]: 10
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 6.5
*He flow [sccm]:100
*Pressure:Fully open APC valve (<2 mTorr)
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'
|Repeating with longer etch time. Low sidewall roughness, less faceting of the Cr mask. Still some trenching and bowing or negative tapering of the profile.
|
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<gallery caption=" C10834: SiO2 etch with Cr mask on wafer piece on Si carrier 45 min etch, EM:0/0 H2:0sccm, C4F8:6.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 25W, coil power:300W" perrow="6" widths="200px" heights="150px">
<gallery caption=" C10834: SiO2 etch with Cr mask on wafer piece on Si carrier 45 min etch, EM:0/0 H2:0sccm, C4F8:6.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 25W, coil power:300W" perrow="6" widths="200px" heights="150px">
File:C10834_04.jpg
File:C10834_12.jpg
File:C10834_10.jpg
File:C10834_08.jpg
File:C10834_06.jpg
File:C10834_06.jpg
File:C10834_08.jpg
File:C10834_10.jpg
File:C10834_02.jpg
File:C10834_02.jpg
File:C10834_12.jpg
File:C10834_04.jpg
File:C10834T_17.jpg
File:C10834T_17.jpg
File:C10834T_15.jpg
File:C10834T_15.jpg
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File:C10834T_22.jpg
File:C10834T_22.jpg
</gallery>
</gallery>
|-
|- style="vertical-align:top;"
|Text
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*Coil Power [W]:300
*'''Platen Power [W]: 20'''
*Platen temperature [<sup>o</sup>C]: 20
*H2 flow [sccm]:0
*O2 flow [sccm]: 10
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 6.5
*He flow [sccm]:100
*Pressure:Fully open APC valve (<2 mTorr)
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'
|Decreased the platen power a little to see if this could remove the trenching. Not much different from the last.
|
|
<gallery caption=" C10844: SiO2 etch with Cr mask on wafer piece on Si carrier 50 min etch, EM:0/0 H2:0sccm, C4F8:6.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 20W, coil power:300W" perrow="6" widths="200px" heights="150px">
<gallery caption=" C10844: SiO2 etch with Cr mask on wafer piece on Si carrier 50 min etch, EM:0/0 H2:0sccm, C4F8:6.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 20W, coil power:300W" perrow="6" widths="200px" heights="150px">
File:C10844_02.jpg
File:C10844_05.jpg
File:C10844_09.jpg
File:C10844_09.jpg
File:C10844_07.jpg
File:C10844_11.jpg
File:C10844_11.jpg
File:C10844_07.jpg
File:C10844_05.jpg
File:C10844_02.jpg
File:C10844_13.jpg
File:C10844_13.jpg
</gallery>
</gallery>
|}
===Profile, top view at tilted SEM images on 800 nm pitch and 50% duty cycle ( look at the Cr mask in top of the page===
<gallery caption="SiO2 etch with Cr mask on full wafer 6 min etch" perrow="2" widths="400px" heights="300px">
File:C09721_center_21.jpg


|- style="vertical-align:top;"
|
*Coil Power [W]:300
*'''Platen Power [W]: 25'''
*Platen temperature [<sup>o</sup>C]: 20
*H2 flow [sccm]:0
*O2 flow [sccm]: 10
*C<sub>4</sub>F<sub>8</sub> flow [sccm]: 11.5
*He flow [sccm]:100
*Pressure:Fully open APC valve (<2 mTorr)
*Electromagnetic coils (EM) 'outer coil' / 'inner coil':'0 A' / '0 A'
|After some major chemical cleans I could not repeat the results of C10834. I need to increase the C4F8 to fairly match the results
|
<gallery caption=" C12508: SiO2 etch with Cr mask on wafer piece on Si carrier 50 min etch, EM:0/0 H2:0sccm, C4F8:11.5sccm He:100sccm O2:10sccm, Pressure:?mTorr; platen power 25W, coil power:300W" perrow="6" widths="200px" heights="150px">
File:C12508_03__14.jpg
File:C12508_03__02.jpg
File:C12508_03__04.jpg
File:C12508_03__06.jpg
File:C12508_03__07.jpg
File:C12508_03__09.jpg
File:C12508_03__12.jpg
</gallery>
</gallery>


<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch" perrow="2" widths="400px" heights="300px">
|}
 
File:C10022_03__02.jpg
 
</gallery>
 
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm" perrow="2" widths="400px" heights="300px">
 
File:C10025_03__07.jpg
 
</gallery>
 
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, O2:5sccm" perrow="2" widths="400px" heights="300px">
 
File:C10026_03__01.jpg
 
</gallery>
 
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:225sccm, Pressure:3.35mTorr" perrow="4" widths="400px" heights="300px">
 
File:C10082_07.jpg
File:C010082top_07.jpg
File:C010082top_03.jpg
File:C010082tilt30_13.jpg
</gallery>
 
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:225sccm, Pressure:3.35mTorr; platen power 150W, coil power:1200W" perrow="2" widths="400px" heights="300px">
 
File:C10084_11.jpg
 
</gallery>
 
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:215sccm O2:10sccm, Pressure:3.6mTorr; platen power 150W, coil power:1200W" perrow="2" widths="400px" heights="300px">
 
File:C10093_03__07.jpg
 
</gallery>
 
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1200W" perrow="2" widths="400px" heights="300px">
 
File:C10101_03__07.jpg
 
</gallery>
 
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:215sccm O2:10sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W" perrow="2" widths="400px" heights="300px">
 
File:C10102_03__01.jpg
 
</gallery>
 
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W" perrow="2" widths="400px" heights="300px">
 
File:C10110_08.jpg |pitch 800 nm <br> Top 461 nm <br> @edge 437 nm <br> bottom 402 nm <br> height 916 nm <br> height from edge 827 nm <br> Cr left 83.5 nm <br> selectivity 55.5
 
</gallery>
 
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 6 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W" perrow="2" widths="400px" heights="300px">
 
File:C10119_05.jpg |pitch 800 nm <br> Top 444 nm <br> bottom 374 nm <br> height 718 nm <br> Cr left 85 nm <br> selectivity 48
 
</gallery>
 
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch (PLEASE DO NOT REPEAT THIS LONG TIME), H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 100W, coil power:1200W" perrow="2" widths="400px" heights="300px">
 
File:C10160_09.jpg
 
</gallery>
 
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 10 min etch, H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.6mTorr; platen power 150W, coil power:1800W" perrow="4" widths="400px" heights="300px">
File:C10161_05.jpg
File:C010161top_01.jpg
File:C010161tilt_04.jpg
</gallery>
 
<gallery caption="SiO2 etch with Cr mask on wafer piece on Si carrier 14 min etch, EM:0/0 H2:0sccm, C4F8:13sccm He:205sccm O2:20sccm, Pressure:3.9mTorr; platen power 100W, coil power:1200W, the mask is removed by plasma ashing on top view and tilted view" perrow="4" widths="400px" heights="300px">
File:C10184_07.jpg
File:C010184top_01.jpg
File:C010184top_04.jpg
File:C010184tilt30plasmaO2_02.jpg| tilt 30 degrees
File:C010184tilt30plasmaO2_01.jpg| tilt 30 degrees
File:C010184tilt20plasmaO2_07.jpg| tilt 20 degrees
File:C010184tilt20plasmaO2_05.jpg| tilt 20 degrees
</gallery>
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