Specific Process Knowledge/Etch/III-V ICP: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Etch/III-V_ICP click here]''' | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Etch/III-V_ICP click here]''' | ||
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[[Image:III-VICP.jpg |300x300px|thumb|The SPTS III/V ICP in the DTU Nanolab cleanroom B-1]] | [[Image:III-VICP.jpg |300x300px|thumb|The SPTS III/V ICP in the DTU Nanolab cleanroom B-1]] | ||
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== Additional information == | == Additional information == | ||
''' | === Endpoint detection === | ||
The III-V ICP is equipped with two endpoint detection systems - an optical endpoint detection system and a laser interferometric system. Click [[Specific Process Knowledge/Etch/OES |'''here''']] to access the page common to all dry etch tools that are equipped with an optical endpoint detection system. | |||
=== Wafer bonding === | |||
To find information on how to bond wafers or chips to a carrier wafer, click [[Specific Process Knowledge/Etch/DryEtchProcessing/Bonding| here]]. | To find information on how to bond wafers or chips to a carrier wafer, click [[Specific Process Knowledge/Etch/DryEtchProcessing/Bonding| here]]. | ||