Specific Process Knowledge/Etch/ICP Metal Etcher/silicon nitride: Difference between revisions
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==Slow etch of silicon nitride with resist as masking material - on 6" carrier wafer with recess == | |||
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This recipe can be used for slow etching of silicon nitride with resist as masking material. Here are some test results presented. The same recipe is being used for SiO2, see the result for that [[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide#Slow etch of SiO2 with resist as masking material-using a 6.22 carrier wafer with recess|here]] | This recipe can be used for slow etching of silicon nitride with resist as masking material. Here are some test results presented. The same recipe is being used for SiO2, see the result for that [[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide#Slow etch of SiO2 with resist as masking material-using a 6.22 carrier wafer with recess|here]] | ||
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!Results | !Results | ||
!Test on wafer with 20% load, ''by Izzet Yildiz @Nanotech'' | !Test on wafer with 20% load, ''by Izzet Yildiz @Nanotech'' | ||
!Test by BGHE @ | !Test by BGHE @nanolab | ||
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|Etch rate of LPCVD nitride | |Etch rate of LPCVD nitride | ||