Specific Process Knowledge/Wafer cleaning/Post CMP Cleaner: Difference between revisions

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-'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Wafer_cleaning/Post_CMP_Cleaner click here]'''
+{{cc-nanolab}}
+'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Wafer_cleaning/Post_CMP_Cleaner click here]'''
+'''All links to Labmanager requires login.'''
 == Post CMP Cleaner) ==
-[[image:Cmp_picture.jpg|400px|right|thumb|The Post CMP CLeaner in cleanroom A-5]]
+[[image:post cmp cleaner.jpg|400px|right|thumb|The Post CMP CLeaner in cleanroom A-5]]
-The post CMP Cleaner is designed for removing slurry residues from polishing wafers. After the Post CMP cleaner is the recommended cleaning tool after using the '''[http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Back-end_processing/Polisher_CMP Polisher CMP]'''.
+The post CMP Cleaner is designed for removing slurry residues from polishing wafers. The Post CMP cleaner is the recommended cleaning tool after using the '''[http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Back-end_processing/Polisher_CMP Polisher CMP]'''.
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 !colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment
-|style="background:WhiteSmoke; color:black"|<b>Polisher/Lapper</b>
+|style="background:WhiteSmoke; color:black"|<b>Post CMP Cleaner</b>
 <!-- |style="background:WhiteSmoke; color:black"|<b>Equipment 2</b> -->
 |-
 !style="background:silver; color:black;" align="center" width="60"|Purpose
 |style="background:LightGrey; color:black"|
-Polishing of
+Cleaning of
 |style="background:WhiteSmoke; color:black"|
-*Silicon
+*Samples from the CMP
-*SiO2
 <!-- |style="background:WhiteSmoke; color:black"|
 *Purpose 1
@@ Line 36: / Line 37: @@
 *Purpose 3 -->
 |-
-!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
-|style="background:LightGrey; color:black"| 20x20mm substrate
-|style="background:WhiteSmoke; color:black"|
-*Removal rate: 400nm/min
-*Thickness accuracy: +/- ? µm
-*Thickness homogeneity: +/- ? µm
-*Roughness: +/- ? µm
-<!-- |style="background:WhiteSmoke; color:black"|
-*Performance range 1
-*Performance range 2
-*Performance range 3 -->
-|-
-|style="background:LightGrey; color:black"|100mm substrate
-|style="background:WhiteSmoke; color:black"|
-*Removal rate: ~ 60 nm/min
-*Thickness accuracy: ? µm
-*Thickness homogeneity: ? µm
-*Roughness: +/- ? µm
-<!-- |style="background:WhiteSmoke; color:black"|
-*Performance range -->
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="4"|Process parameter range
-|style="background:LightGrey; color:black"|Polishing liquid
-|style="background:WhiteSmoke; color:black"|
-*SF1 Polishing Fluid
 |-
-|style="background:LightGrey; color:black"|Polishing cloths
+|style="background:LightGrey; color:black"|Mechanical Cleaning
 |style="background:WhiteSmoke; color:black"|
-*Chemcloth Polishing Cloths
+*Brush Cleaning
 |-
-|style="background:LightGrey; color:black"|Rotation
+|style="background:LightGrey; color:black"|Power
 |style="background:WhiteSmoke; color:black"|
-*Plate
+*Megasonic Power from 0-40 W (in water)
-*Head/Puck
 |-
 |style="background:LightGrey; color:black"|Arm sweep
 |style="background:WhiteSmoke; color:black"|
-*Polishing: 20% (inner) - 100% (outer)
+*4" and 6" (20x20mm and 2" run with a 4" sweep)
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
@@ Line 92: / Line 70: @@
 |style="background:WhiteSmoke; color:black"|
 *Silicon
+*Polysilicon
+*Silicon Oxide
 *Glass/Quartz
 <!-- |style="background:WhiteSmoke; color:black"|