Specific Process Knowledge/Thermal Process/Dope with Boron: Difference between revisions

← Older edit

VisualWikitext

@@ Line 1: / Line 1: @@
+{{cc-nanolab}}
 '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Dope_with_Boron click here]'''
-==Dope with boron==
+=Doping with Boron=
-The furnace A1 Boron Drive-in and Pre-dep can be used to pre-deposit silicon wafers with boron. The silicon wafers are positioned in a silicon carbide boat just next to wafers of boron nitride. Pre-deposit of boron is a diffusion process on the silicon wafers.
+The Boron Drive-in and Pre-dep furnace (A1) can be used to pre-deposit/dope silicon wafers with boron.
+The boron doping is done by use of boron nitride source wafers, that allows boron to diffuse into the silicon wafers. The source wafers have to be RCA1 cleaned and activated, i.e. heated up to at least 1050 <sup>o</sup>C, before the boron pre-deposition is done. The procedure for this can be found in the user manual for the A1 furnace.
+In the furnace, the silicon wafers are positioned in a silicon carbide boat just next to the boron nitride source wafers. The side of the silicon wafers that needs to be doped, has to point towards the source wafers.
-The concentration of boron in the wafer depends on the process temperature.
+The concentration of boron in the wafers after the pre-deposition depends on the process temperature, and the doping depth profile depends of the process time.
-The depth profile depends of the process time.
-All this figures have been made at the time where there was a furnace only for Boron Pre-dep (furnace A2). The process was done at a temperature of 1125 <sup>o</sup>C and a flow of 5 slm N<sub>2</sub> and 0.2 slm of O<sub>2</sub>.
+All the graphs shown on this page have been made in 2003. A this time DTU Nanolab had a furnace dedicated only for boron pre-deposition (the A2 furnace, which is now a Gate Oxide furnace). The pre-deposition processes were done at a temperature of 1125 <sup>o</sup>C and with a flow of 5 slm N<sub>2</sub> and 0.2 slm of O<sub>2</sub>.
 <gallery caption="Boron profiles from SIMS " widths="400px" heights="300px" perrow="3">