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Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions

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=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=
{{cc-nanolab}}


'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Annealing click here]'''
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==Annealing==


At DTU Nanolab  we have five furnaces and two RTP (rapid thermal processor) that can be used for annealing: Anneal-Oxide furnace (C1), Anneal-bond furnace (C3), Al_anneal furnace (C4), Multipurpose Anneal furnace, RTP2 Jipelec and RTP Annealsys (last one, reserved to research). Annealing normally takes place in an N<sub>2</sub> atmosphere, or it can be done in H<sub>2</sub> or a H<sub>2</sub>-N<sub>2</sub> gas mixture in the Multipurpose Anneal furnace. PECVD PBSG glass is annealed in a wet atmosphere which will also oxidize the silicon substrate.


'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Annealing click here]'''
A 20-minute N<sub>2</sub> annealing step is also included in all recipes on the oxidation furnace, this annealing is done after the oxidation.


==Annealing==
==Comparison of the annealing furnaces==
At Danchip we have three furnaces and an RTP for annealing: C1, C3, Noble furnace and RTP. Annealing normally takes place in an N<sub>2</sub> atmosphere. PECVD PBSG is annealed in an wet atmosphere which will also oxidize the silicon substrate.
 
The oxidation furnace recipes are made so a 20 minutes N<sub>2</sub> annealing step is include and it is not necessary to make one more.


==Comparison of the annealing furnaces==
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!
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[[Specific_Process_Knowledge/Thermal_Process/C1_Furnace_Anneal-oxide| C1: Anneal Oxide]]
[[Specific_Process_Knowledge/Thermal_Process/C1_Furnace_Anneal-oxide|Anneal Oxide furnace (C1)]]
!
[[Specific_Process_Knowledge/Thermal_Process/C3_Anneal-bond_furnace|Anneal-Bond furnace (C3)]]
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[[Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace|Aluminium Anneal furnace (C4)]]
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[[Specific_Process_Knowledge/Thermal_Process/C3_Anneal-bond_furnace| C3: Anneal Bond]]
[[Specific Process Knowledge/Thermal Process/Furnace: Multipurpose annealing|Resist Pyrolysis (research tool)]]
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[[Specific_Process_Knowledge/Thermal_Process/Furnace_Noble| Noble furnace]]
[[Specific_Process_Knowledge/Thermal_Process/RTP Jipelec 2| RTP2 Jipelec]]
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[[Specific_Process_Knowledge/Thermal_Process/Jipelec_RTP| Jipelec RTP]]
[[Specific_Process_Knowledge/Thermal_Process/RTP Annealsys| RTP Annealsys (research tool)]]
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!General description
!General description
|Annealing of 6" wafers. Annealing of wafers from the LPCVD furnaces and PECVD1.  
|Annealing of 4" and 6" wafers. Annealing of wafers from the LPCVD furnaces and from PECVD4.  
|Annealing of wafers from EVG-NIL, PECVD3 and wafers with aluminum.
|Annealing of wafers from Wafer Bonder 02 and from and PECVD4 and PECVD3.
|Annealing of almost materials on silicon wafer.
|Annealing of wafers and samples with Al and ALD deposited AL<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub>
|Rapid thermal annealing
|Resist pyrolysis
|Rapid thermal processing, usually, annealing (RTA).
|Rapid thermal processing: RTA (annealing), RTO (oxidation), RTN (nitridation) and RTH (hydrogenation).
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|-style="background:WhiteSmoke; color:black"
|-style="background:LightGrey; color:black"
!Annealing gas
!Annealing gas
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*N<sub>2</sub>
*N<sub>2</sub>
*Ar
*Wet annealing with bobbler (water steam + N<sub>2</sub>)
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*N<sub>2</sub>
*N<sub>2</sub>
*(Forming gas, 5% H<sub>2</sub>/95% N<sub>2</sub> - Being tested)
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*N<sub>2</sub>
*(H<sub>2</sub>-N<sub>2</sub> gas mixture)
*Vacuum is possible
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*Ar
*Ar
*N<sub>2</sub>
*Low vacuum is possible (min. 2/3 mbar)
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*N<sub>2</sub>
*Ar
*Vacuum is possible  
*NH<sub>3</sub>
*O<sub>2</sub>
*5% H<sub>2</sub>/Ar
*High vacuum is possible (10<sup>-6</sup> mbar)
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|-style="background:LightGrey; color:black"
|-style="background:WhiteSmoke; color:black"
!Process temperature
!Process temperature
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*700 <sup>o</sup>C - 1150 <sup>o</sup>C
*700 <sup>o</sup>C - 1150 <sup>o</sup>C
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*20 <sup>o</sup>C - 1000 <sup>o</sup>C
*350 <sup>o</sup>C - 1150 <sup>o</sup>C
*Max 500 <sup>o</sup>C for wafers and samples with Al
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*Vacuum: 20 <sup>o</sup>C - 1050 <sup>o</sup>C¨
*No vacuum: 20 <sup>o</sup>C - 1050 <sup>o</sup>C
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*20 <sup>o</sup>C - 1200 <sup>o</sup>C
* '''Max. 100 <sup>o</sup>C/s''' with '''carrier wafer''' or '''sample wafer'''
* '''Max. 50 <sup>o</sup>C/s''' with SiC-coated graphite '''susceptor'''
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*20 <sup>o</sup>C - 1000 <sup>o</sup>C
*700 <sup>o</sup>C - 1200 <sup>o</sup>C
*Ramp up to 300 C/min
*Max. 150 <sup>o</sup>C/s
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|-style="background:WhiteSmoke; color:black"
|-style="background:LightGrey; color:black"
!Substrate and Batch size  
!Substrate and Batch size  
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*1-30 50 mm wafers
*1-30 50 mm wafers
*1-30 100 mm wafers
*1-30 100 mm wafers
*1-30 150 mm wafers
*1-30 150 mm wafer
*(Small samples on a carrier wafer, horizontal)
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*Small samples on carrier wafer, horizontal
*1-30 50 mm wafers
*1-30 50 mm wafers
*1-30 100 mm wafers
*1-30 100 mm wafers
*Small samples on a carrier wafer, horizontal
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*Small samples on carrier wafer, horizontal
*1-30 50 mm wafers
*1-25 50 mm wafers
*1-30 100 mm wafers
*1-25 100 mm wafers, vertical and horizontal
*1 150 mm wafer
*Small samples on a carrier wafer, horizontal
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*1-30 50 mm, 100 mm or 150 mm wafers  
*Small samples on a carrier wafer, horizontal
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*Single-wafer process
*Chips on carrier
*50 mm, 100 mm or 150 mm wafers
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*Small samples on carrier wafer
*Single-wafer process
*One 100 mm wafers on carrier wafer
*Chips on carrier
*100 mm or 150 mm wafers
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|-style="background:LightGrey; color:black"
|-style="background:WhiteSmoke; color:black"
!'''Allowed materials'''
!'''Allowed materials'''
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*All processed wafers have to be RCA cleaned.  
*All processed wafers have to be RCA cleaned, except wafers from LPCVD furnaces and PECVD4.  
*Except for wafers from LPCVD furnaces and PECVD1.  
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*All processed wafers have to be RCA cleaned, except wafers from the Wafer Bonder 02 and from PECVD4 and PECVD3.
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*Wafers and samples with Al and ALD deposited AL<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub>
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*All processed wafers have to be RCA cleaned.
*Samples for resist pyrolysis.
*Except for wafers from EVG-NIL, PECVD3 and wafer for annealing of aluminum.
*No metals allowed
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*Almost all materials, permission is need.  
*Silicon
*Silicon oxides and nitrides
*Quartz
*Metals - ask for permission
*III-V materials - '''below 440 °C''', otherwise it can lead to outgassing of toxic gases.
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*III-V samples
*Silicon
*Silicon wafer
*Silicon Nitride
*Some metals
*Aluminum Oxide
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