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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Annealing click here]'''


'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Annealing click here]'''
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==Annealing==
==Annealing==
At Danchip we have seven furnaces and an RTP for annealing: A1, A3, C1, C2, C3, C4, noble furnace and RTP. Annealing normally takes place in an N<sub>2</sub> atmosphere. PECVD PBSG is annealed in an wet atmosphere which will also oxidize the silicon substrate.
*Anneal with N<sub>2</sub> can be done in furnaces:A1,A3,C1,C2,C3,C4, noble furnace and RTP
*Wet anneal with H<sub>2</sub>O in a bubbler can be done in furnaces:C1 and C3.
==Comparison of the seven annealing equipments==
{| {{table}} border="2" cellspacing="0" cellpadding="8" width="1000pt"
| valign="top" align="center" style="background:#f0f0f0;"|
| valign="top" align="center" style="background:#f0f0f0;"|'''A1 <br /> Boron drive-in'''
| valign="top" align="center" style="background:#f0f0f0;"|'''A3 <br />Phosphorous drive-in'''
| valign="top" align="center" style="background:#f0f0f0;"|'''C1 <br />Anneal oxide'''
| valign="top" align="center" style="background:#f0f0f0;"|'''C3 <br />Anneal bond'''
| valign="top" align="center" style="background:#f0f0f0;"|'''C4 <br />Anneal aluminium'''
| valign="top" align="center" style="background:#f0f0f0;"|'''Nobel furnace'''
| valign="top" align="center" style="background:#f0f0f0;"|'''RTP'''
|-valign="top"
! General description
|Drive-in of boron deposited in the boron pre-dep furnace(A2) or drive-in of ion implanted boron. Can also be used for oxidation.||Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A2) or drive-in of ion implanted phosphorous. Can also be used for oxidation.||Annealing and oxidation of wafers from the B-stack and PECVD1. At the moment also used for general annealing and oxidation of 6" wafers.||Annealing and oxidation of wafers from NIL.||Annealing of wafers with aluminium.||Annealing and oxidation of any material.||Rapid thermal annealing.
|-
! Annealing with N<sub>2</sub>
|x||x||x||x||x||x||x
|-
!Wet annealing with bubler (water steam + N<sub>2</sub>)
|.||.||x||x||.||.||.
|-
!Process temperature [ <sup>o</sup>C ]
|800-1150||800-1150||800-1150||800-1150||800-1150||22-1000<sup>o</sup>C||22-1000<sup>o</sup>C
|-valign="top"
! Batch size
|max. 30 wafers of 4" or 2"||max. 30 4" wafers or 2" wafers||max. 30 wafers of 6",4" or 2"|||max. 30 4" wafers or 2" wafers||max. 30 4" wafers or 2" wafers||30x4" or small pieces||1x4" or small pieces
|-
!style="background:#f0f0f0;"|Which wafers are allowed to enter the furnace:
| valign="top" align="center" style="background:#f0f0f0;"|'''A1 <br />Boron drive-in'''
| valign="top" align="center" style="background:#f0f0f0;"|'''A3 <br />Phosphorous drive-in'''
| valign="top" align="center" style="background:#f0f0f0;"|'''C1 <br />Anneal oxide'''
| valign="top" align="center" style="background:#f0f0f0;"|'''C3 <br />Anneal bond'''
| valign="top" align="center" style="background:#f0f0f0;"|'''C4 <br />Anneal aluminium'''
| valign="top" align="center" style="background:#f0f0f0;"|'''Nobel'''
| valign="top" align="center" style="background:#f0f0f0;"|'''RTP'''
|-
| New clean* Si wafers 4" (6" in C1)||.||.||.||x||x||x||x
|-
| RCA clean** Si wafers with no history of Metals on||x||x||x||x||x||x||x
|-
| From Predep furnace  directly (e.g. incl. Predep HF**)||From A2||From A4||x||x||x||x||x
|-
| Wafers directly from PECVD1||.||.||x||x||x||x||x
|-
| Wafers directly from NIL bonding||.||.||.||x||x||x||x
|-
|Wafers with aluminium||.||.||.||.||x||x||.
|-
|wafers with other metals||.||.||.||||.||x||.
|-
|wafers with III-V materials||||||||||||||x
|-
|}


<nowiki>*</nowiki>New clean: only right from the new clean box. It is not allowed to put them in another box first.  
At DTU Nanolab  we have five furnaces and two RTP (rapid thermal processor) that can be used for annealing: Anneal-Oxide furnace (C1), Anneal-bond furnace (C3), Al_anneal furnace (C4), Multipurpose Anneal furnace, RTP2 Jipelec and RTP Annealsys (last one, reserved to research). Annealing normally takes place in an N<sub>2</sub> atmosphere, or it can be done in H<sub>2</sub> or a H<sub>2</sub>-N<sub>2</sub> gas mixture in the Multipurpose Anneal furnace. PECVD PBSG glass is annealed in a wet atmosphere which will also oxidize the silicon substrate.  


<nowiki>**</nowiki>These wafers must be placed in a "transport box from RCA to furnace" using the RCA carrier when doing RCA or the pre-dep carrier after pre-dep.
A 20-minute N<sub>2</sub> annealing step is also included in all recipes on the oxidation furnace, this annealing is done after the oxidation.


==Comparison of the seven oxidation furnaces==
==Comparison of the annealing furnaces==


 
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
{|border="1" cellspacing="1" cellpadding="7" style="text-align:left;"  
|-
|-


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|
|
!
!
[[Specific_Process_Knowledge/Thermal_Process/A1_Bor_Drive-in_furnace| A1: Boron Drive-in]]
[[Specific_Process_Knowledge/Thermal_Process/C1_Furnace_Anneal-oxide|Anneal Oxide furnace (C1)]]
!
!
[[Specific_Process_Knowledge/Thermal_Process/C2_Gate_Oxide_furnace| A2: Gate Oxide]]
[[Specific_Process_Knowledge/Thermal_Process/C3_Anneal-bond_furnace|Anneal-Bond furnace (C3)]]
!
!
[[Specific_Process_Knowledge/Thermal_Process/A3_Phosphor_Drive-in_furnace| A3: Phosphorous Drive-in]]
[[Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace|Aluminium Anneal furnace (C4)]]
!
!
[[Specific_Process_Knowledge/Thermal_Process/C1_Furnace_Anneal-oxide| C1: Anneal Oxide]]
[[Specific Process Knowledge/Thermal Process/Furnace: Multipurpose annealing|Resist Pyrolysis (research tool)]]
!
!
[[Specific_Process_Knowledge/Thermal_Process/C3_Anneal-bond_furnace| C3: Anneal Bond]]
[[Specific_Process_Knowledge/Thermal_Process/RTP Jipelec 2| RTP2 Jipelec]]
!
!
[[Specific_Process_Knowledge/Thermal_Process/Furnace_APOX| D1: APOX]]
[[Specific_Process_Knowledge/Thermal_Process/RTP Annealsys| RTP Annealsys (research tool)]]
!
[[Specific_Process_Knowledge/Thermal_Process/Furnace_Noble| Noble furnace]]
|-
|-


|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Generel description
!General description
|Drive-in of boron deposited in the boron pre-dep furnace(A1) or drive-in of ion implanted boron. Can also be used for dry and wet oxidation.
|Annealing of 4" and 6" wafers. Annealing of wafers from the LPCVD furnaces and from PECVD4.  
|Oxidation of gate-oxide and other especially clean oxides.
|Annealing of wafers from Wafer Bonder 02 and from and PECVD4 and PECVD3.
|Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A4) or drive-in of ion implanted phosphorous. Can also be used for dry and wet oxidation.
|Annealing of wafers and samples with Al and ALD deposited AL<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub>
|Oxidation and annealing of 6" wafers. Oxidation of new wafer with out RCA cleaning. Annealing of wafers from the LPCVD furnaces and PECVD1.  
|Resist pyrolysis
|Oxidation and annealing of wafers from EVG-NIL, PECVD3 and wafers with aluminum.
|Rapid thermal processing, usually, annealing (RTA).
|Oxidation of very thick oxides, thickness higher than 4 µm.
|Rapid thermal processing: RTA (annealing), RTO (oxidation), RTN (nitridation) and RTH (hydrogenation).
|Oxidation and annealing of almost materials on silicon wafer.
|-
|-


|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Oxidation method
|
*Dry: 5 SLM O<sub>2</sub>
*Wet: Torch
|
*Dry: 5 SLM O<sub>2</sub>
|
*Dry: 5 SLM O<sub>2</sub>
*Wet: Torch
|
*Dry: 5 SLM O<sub>2</sub>
*Wet: Steamer
|
*Dry: 5 SLM O<sub>2</sub>
*Wet: Bobbler
|
*Dry: 5 SLM O<sub>2</sub>
*Wet: Bubbler
|
*Dry: 5 SLM O<sub>2</sub>
*Wet: Bubbler
|-
|-
|-style="background:WhiteSmoke; color:black"
!Annealing gas
!Annealing gas
|
|
*N<sub>2</sub>
*N<sub>2</sub>
*Ar
|
|
*N<sub>2</sub>
*N<sub>2</sub>
|
|
*N<sub>2</sub>
*N<sub>2</sub>
*(Forming gas, 5% H<sub>2</sub>/95% N<sub>2</sub> - Being tested)
|
|
*N<sub>2</sub>
*N<sub>2</sub>
*(H<sub>2</sub>-N<sub>2</sub> gas mixture)
*Vacuum is possible
|
|
*Ar
*N<sub>2</sub>
*N<sub>2</sub>
*Low vacuum is possible (min. 2/3 mbar)
|
|
*N<sub>2</sub>
|
*N<sub>2</sub>
*Ar
*Ar
*NH<sub>3</sub>
*O<sub>2</sub>
*5% H<sub>2</sub>/Ar
*High vacuum is possible (10<sup>-6</sup> mbar)
|-
|-


|-
|-
|-style="background:LightGrey; color:black"
|-style="background:WhiteSmoke; color:black"
!Process temperatur
!Process temperature
|
|
*900 <sup>o</sup>C - 1150 <sup>o</sup>C
*700 <sup>o</sup>C - 1100 <sup>o</sup>C
|
|
*900 <sup>o</sup>C - 1150 <sup>o</sup>C
*700 <sup>o</sup>C - 1150 <sup>o</sup>C
|
|
*900 <sup>o</sup>C - 1150 <sup>o</sup>C
*350 <sup>o</sup>C - 1150 <sup>o</sup>C
*Max 500 <sup>o</sup>C for wafers and samples with Al
|
|
*700 <sup>o</sup>C - 1100 <sup>o</sup>C
*Vacuum: 20 <sup>o</sup>C - 1050 <sup>o</sup>C¨
*No vacuum: 20 <sup>o</sup>C - 1050 <sup>o</sup>C
|
|
*900 <sup>o</sup>C - 1150 <sup>o</sup>C
*20 <sup>o</sup>C - 1200 <sup>o</sup>C
* '''Max. 100 <sup>o</sup>C/s''' with '''carrier wafer''' or '''sample wafer'''
* '''Max. 50 <sup>o</sup>C/s''' with SiC-coated graphite '''susceptor'''
|
|
*1075 <sup>o</sup>C
*700 <sup>o</sup>C - 1200 <sup>o</sup>C
|
*Max. 150 <sup>o</sup>C/s
*20 <sup>o</sup>C - 1000 <sup>o</sup>C
|-
|-


|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:LightGrey; color:black"
!Substrate and Batch size  
!Substrate and Batch size  
|
|
*1-30 50 mm wafers
*1-30 50 mm wafers
*1-30 100 mm wafers
*1-30 100 mm wafers
Including one test wafer
*1-30 150 mm wafer
|
*(Small samples on a carrier wafer, horizontal)
*1-30 50 mm wafers
*1-30 100 mm wafers
Including one test wafer  
|
|
*1-30 50 mm wafers
*1-30 50 mm wafers
*1-30 100 mm wafers
*1-30 100 mm wafers
Including one test wafer
*Small samples on a carrier wafer, horizontal
|
|
*1-30 50 mm wafers
*1-30 50 mm wafers
*1-30 100 mm wafers
*1-30 100 mm wafers
*1-30 150 mm wafers
*1 150 mm wafer
Including one test wafer
*Small samples on a carrier wafer, horizontal
|
|
*Small samples on carrier wafer, horizontal
*1-30 50 mm, 100 mm or 150 mm wafers  
*1-30 50 mm wafers
*Small samples on a carrier wafer, horizontal
*1-30 100 mm wafers
Including one test wafer
|
|
*1-150 100 mm wafers
*Single-wafer process
*Chips on carrier
*50 mm, 100 mm or 150 mm wafers
|
|
*Small samples on carrier wafer, horizontal
*Single-wafer process
*1-25 50 mm wafers
*Chips on carrier
*1-25 100 mm wafers, vertical and horizontal
*100 mm or 150 mm wafers
|-
|-


|-
|-
|-style="background:LightGrey; color:black"
|-style="background:WhiteSmoke; color:black"
!'''Allowed materials'''
!'''Allowed materials'''
|
|
All wafers have to be RCA cleaned.
*All processed wafers have to be RCA cleaned, except wafers from LPCVD furnaces and PECVD4.  
Except for Boron pre-dep wafer from furnace A1.
|
All wafers have to be RCA cleaned.  
|
|
All wafers have to be RCA cleaned.
*All processed wafers have to be RCA cleaned, except wafers from the Wafer Bonder 02 and from PECVD4 and PECVD3.
Except for Phosphorous pre-dep wafers from furnace A4.
|
|
All processed wafers have to be RCA cleaned.
*Wafers and samples with Al and ALD deposited AL<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub>
Except for wafers from LPCVD furnace and PECVD1.
|
|
All wafers have to be RCA cleaned.  
*Samples for resist pyrolysis.
Except for wafers from EVG-NIL, PECVD3 and wafer for annealing of aluminum.
*No metals allowed
|
|
Only new wafers
*Silicon
*Silicon oxides and nitrides
*Quartz
*Metals - ask for permission
*III-V materials - '''below 440 °C''', otherwise it can lead to outgassing of toxic gases.
|
|
Almost all meterials
*Silicon
*Silicon Nitride
*Aluminum Oxide
|-
|-
|}
|}


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