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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Annealing click here]'''
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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Annealing click here]'''
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==Annealing==
==Annealing==
At Danchip we have seven furnaces and an RTP for annealing: A1, A3, C1, C2, C3, C4, noble furnace and RTP. Annealing normally takes place in an N<sub>2</sub> atmosphere. PECVD PBSG is annealed in an wet atmosphere which will also oxidize the silicon substrate.


*Anneal with N<sub>2</sub> can be done in furnaces:A1,A3,C1,C2,C3,C4, noble furnace and RTP
At DTU Nanolab  we have five furnaces and two RTP (rapid thermal processor) that can be used for annealing: Anneal-Oxide furnace (C1), Anneal-bond furnace (C3), Al_anneal furnace (C4), Multipurpose Anneal furnace, RTP2 Jipelec and RTP Annealsys (last one, reserved to research). Annealing normally takes place in an N<sub>2</sub> atmosphere, or it can be done in H<sub>2</sub> or a H<sub>2</sub>-N<sub>2</sub> gas mixture in the Multipurpose Anneal furnace. PECVD PBSG glass is annealed in a wet atmosphere which will also oxidize the silicon substrate.  
*Wet anneal with H<sub>2</sub>O in a bubbler can be done in furnaces:C1 and C3.


==Comparison of the seven annealing equipments==
A 20-minute N<sub>2</sub> annealing step is also included in all recipes on the oxidation furnace, this annealing is done after the oxidation.
{| {{table}} border="2" cellspacing="0" cellpadding="8" width="1000pt"
| valign="top" align="center" style="background:#f0f0f0;"|
| valign="top" align="center" style="background:#f0f0f0;"|'''A1 <br /> Boron drive-in'''
| valign="top" align="center" style="background:#f0f0f0;"|'''A3 <br />Phosphorous drive-in'''
| valign="top" align="center" style="background:#f0f0f0;"|'''C1 <br />Anneal oxide'''
| valign="top" align="center" style="background:#f0f0f0;"|'''C3 <br />Anneal bond'''
| valign="top" align="center" style="background:#f0f0f0;"|'''C4 <br />Anneal aluminium'''
| valign="top" align="center" style="background:#f0f0f0;"|'''Nobel furnace'''
| valign="top" align="center" style="background:#f0f0f0;"|'''RTP'''
|-valign="top"
! General description
|Drive-in of boron deposited in the boron pre-dep furnace(A2) or drive-in of ion implanted boron. Can also be used for oxidation.||Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A2) or drive-in of ion implanted phosphorous. Can also be used for oxidation.||Annealing and oxidation of wafers from the B-stack and PECVD1. At the moment also used for general annealing and oxidation of 6" wafers.||Annealing and oxidation of wafers from NIL.||Annealing of wafers with aluminium.||Annealing and oxidation of any material.||Rapid thermal annealing.
|-
! Annealing with N<sub>2</sub>
|x||x||x||x||x||x||x
|-
!Wet annealing with bubler (water steam + N<sub>2</sub>)
|.||.||x||x||.||.||.
|-
!Process temperature [ <sup>o</sup>C ]
|800-1150||800-1150||800-1150||800-1150||800-1150||22-1000<sup>o</sup>C||22-1000<sup>o</sup>C
|-valign="top"
! Batch size
|max. 30 wafers of 4" or 2"||max. 30 4" wafers or 2" wafers||max. 30 wafers of 6",4" or 2"|||max. 30 4" wafers or 2" wafers||max. 30 4" wafers or 2" wafers||30x4" or small pieces||1x4" or small pieces
|-
!style="background:#f0f0f0;"|Which wafers are allowed to enter the furnace:
| valign="top" align="center" style="background:#f0f0f0;"|'''A1 <br />Boron drive-in'''
| valign="top" align="center" style="background:#f0f0f0;"|'''A3 <br />Phosphorous drive-in'''
| valign="top" align="center" style="background:#f0f0f0;"|'''C1 <br />Anneal oxide'''
| valign="top" align="center" style="background:#f0f0f0;"|'''C3 <br />Anneal bond'''
| valign="top" align="center" style="background:#f0f0f0;"|'''C4 <br />Anneal aluminium'''
| valign="top" align="center" style="background:#f0f0f0;"|'''Nobel'''
| valign="top" align="center" style="background:#f0f0f0;"|'''RTP'''
|-
| New clean* Si wafers 4" (6" in C1)||.||.||.||x||x||x||x
|-
| RCA clean** Si wafers with no history of Metals on||x||x||x||x||x||x||x
|-
| From Predep furnace directly (e.g. incl. Predep HF**)||From A2||From A4||x||x||x||x||x
|-
| Wafers directly from PECVD1||.||.||x||x||x||x||x
|-
| Wafers directly from NIL bonding||.||.||.||x||x||x||x
|-
|Wafers with aluminium||.||.||.||.||x||x||.
|-
|wafers with other metals||.||.||.||||.||x||.
|-
|wafers with III-V materials||||||||||||||x
|-
|}
 
<nowiki>*</nowiki>New clean: only right from the new clean box. It is not allowed to put them in another box first.
 
<nowiki>**</nowiki>These wafers must be placed in a "transport box from RCA to furnace" using the RCA carrier when doing RCA or the pre-dep carrier after pre-dep.
 
==Comparison of the seven oxidation furnaces==


==Comparison of the annealing furnaces==


{|border="1" cellspacing="1" cellpadding="7" style="text-align:left;"  
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
|-
|-


Line 74: Line 19:
|
|
!
!
[[Specific_Process_Knowledge/Thermal_Process/A1_Bor_Drive-in_furnace| A1: Boron Drive-in]]
[[Specific_Process_Knowledge/Thermal_Process/C1_Furnace_Anneal-oxide|Anneal Oxide furnace (C1)]]
!
!
[[Specific_Process_Knowledge/Thermal_Process/C2_Gate_Oxide_furnace| A2: Gate Oxide]]
[[Specific_Process_Knowledge/Thermal_Process/C3_Anneal-bond_furnace|Anneal-Bond furnace (C3)]]
!
!
[[Specific_Process_Knowledge/Thermal_Process/A3_Phosphor_Drive-in_furnace| A3: Phosphorous Drive-in]]
[[Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace|Aluminium Anneal furnace (C4)]]
!
!
[[Specific_Process_Knowledge/Thermal_Process/C1_Furnace_Anneal-oxide| C1: Anneal Oxide]]
[[Specific Process Knowledge/Thermal Process/Furnace: Multipurpose annealing|Resist Pyrolysis (research tool)]]
!
!
[[Specific_Process_Knowledge/Thermal_Process/C3_Anneal-bond_furnace| C3: Anneal Bond]]
[[Specific_Process_Knowledge/Thermal_Process/RTP Jipelec 2| RTP2 Jipelec]]
!
!
[[Specific_Process_Knowledge/Thermal_Process/Furnace_APOX| D1: APOX]]
[[Specific_Process_Knowledge/Thermal_Process/RTP Annealsys| RTP Annealsys (research tool)]]
!
[[Specific_Process_Knowledge/Thermal_Process/Furnace_Noble| Noble furnace]]
|-
|-


|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Generel description
!General description
|Drive-in of boron deposited in the boron pre-dep furnace(A1) or drive-in of ion implanted boron. Can also be used for dry and wet oxidation.
|Annealing of 4" and 6" wafers. Annealing of wafers from the LPCVD furnaces and from PECVD4.  
|Oxidation of gate-oxide and other especially clean oxides.
|Annealing of wafers from Wafer Bonder 02 and from and PECVD4 and PECVD3.
|Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A4) or drive-in of ion implanted phosphorous. Can also be used for dry and wet oxidation.
|Annealing of wafers and samples with Al and ALD deposited AL<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub>
|Oxidation and annealing of 6" wafers. Oxidation of new wafer with out RCA cleaning. Annealing of wafers from the LPCVD furnaces and PECVD1.  
|Resist pyrolysis
|Oxidation and annealing of wafers from EVG-NIL, PECVD3 and wafers with aluminum.
|Rapid thermal processing, usually, annealing (RTA).
|Oxidation of very thick oxides, thickness higher than 4 µm.
|Rapid thermal processing: RTA (annealing), RTO (oxidation), RTN (nitridation) and RTH (hydrogenation).
|Oxidation and annealing of almost materials on silicon wafer.
|-
|-


|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Oxidation method
|
*Dry: 5 SLM O<sub>2</sub>
*Wet: Torch
|
*Dry: 5 SLM O<sub>2</sub>
|
*Dry: 5 SLM O<sub>2</sub>
*Wet: Torch
|
*Dry: 5 SLM O<sub>2</sub>
*Wet: Steamer
|
*Dry: 5 SLM O<sub>2</sub>
*Wet: Bobbler
|
*Dry: 5 SLM O<sub>2</sub>
*Wet: Bubbler
|
*Dry: 5 SLM O<sub>2</sub>
*Wet: Bubbler
|-
|-
|-style="background:WhiteSmoke; color:black"
!Annealing gas
!Annealing gas
|
*N<sub>2</sub>
*Ar
|
|
*N<sub>2</sub>
*N<sub>2</sub>
Line 138: Line 52:
|
|
*N<sub>2</sub>
*N<sub>2</sub>
*(Forming gas, 5% H<sub>2</sub>/95% N<sub>2</sub> - Being tested)
|
|
*N<sub>2</sub>
*N<sub>2</sub>
*(H<sub>2</sub>-N<sub>2</sub> gas mixture)
*Vacuum is possible
|
|
*Ar
*N<sub>2</sub>
*N<sub>2</sub>
*Low vacuum is possible (min. 2/3 mbar)
|
|
*N<sub>2</sub>
*Ar
*Ar
*NH<sub>3</sub>
*O<sub>2</sub>
*5% H<sub>2</sub>/Ar
*High vacuum is possible (10<sup>-6</sup> mbar)
|-
|-


|-
|-
|-style="background:LightGrey; color:black"
|-style="background:WhiteSmoke; color:black"
!Process temperatur
!Process temperature
|
|
*900 <sup>o</sup>C - 1150 <sup>o</sup>C
*700 <sup>o</sup>C - 1100 <sup>o</sup>C
|
*900 <sup>o</sup>C - 1150 <sup>o</sup>C
|
|
*900 <sup>o</sup>C - 1150 <sup>o</sup>C
*700 <sup>o</sup>C - 1150 <sup>o</sup>C
|
|
*700 <sup>o</sup>C - 1100 <sup>o</sup>C
*350 <sup>o</sup>C - 1150 <sup>o</sup>C
*Max 500 <sup>o</sup>C for wafers and samples with Al
|
|
*900 <sup>o</sup>C - 1150 <sup>o</sup>C
*Vacuum: 20 <sup>o</sup>C - 1050 <sup>o</sup>C¨
*No vacuum: 20 <sup>o</sup>C - 1050 <sup>o</sup>C
|
|
*1075 <sup>o</sup>C
*20 <sup>o</sup>C - 1200 <sup>o</sup>C
* '''Max. 100 <sup>o</sup>C/s''' with '''carrier wafer''' or '''sample wafer'''
* '''Max. 50 <sup>o</sup>C/s''' with SiC-coated graphite '''susceptor'''
|
|
*20 <sup>o</sup>C - 1000 <sup>o</sup>C
*700 <sup>o</sup>C - 1200 <sup>o</sup>C
*Max. 150 <sup>o</sup>C/s
|-
|-


|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:LightGrey; color:black"
!Substrate and Batch size  
!Substrate and Batch size  
|
|
*1-30 50 mm wafers
*1-30 50 mm wafers
*1-30 100 mm wafers
*1-30 100 mm wafers
Including one test wafer
*1-30 150 mm wafer
|
*(Small samples on a carrier wafer, horizontal)
*1-30 50 mm wafers
*1-30 100 mm wafers
Including one test wafer  
|
|
*1-30 50 mm wafers
*1-30 50 mm wafers
*1-30 100 mm wafers
*1-30 100 mm wafers
Including one test wafer
*Small samples on a carrier wafer, horizontal
|
|
*1-30 50 mm wafers
*1-30 50 mm wafers
*1-30 100 mm wafers
*1-30 100 mm wafers
*1-30 150 mm wafers
*1 150 mm wafer
Including one test wafer
*Small samples on a carrier wafer, horizontal
|
|
*Small samples on carrier wafer, horizontal
*1-30 50 mm, 100 mm or 150 mm wafers  
*1-30 50 mm wafers
*Small samples on a carrier wafer, horizontal
*1-30 100 mm wafers
Including one test wafer
|
|
*1-150 100 mm wafers
*Single-wafer process
*Chips on carrier
*50 mm, 100 mm or 150 mm wafers
|
|
*Small samples on carrier wafer, horizontal
*Single-wafer process
*1-25 50 mm wafers
*Chips on carrier
*1-25 100 mm wafers, vertical and horizontal
*100 mm or 150 mm wafers
|-
|-


|-
|-
|-style="background:LightGrey; color:black"
|-style="background:WhiteSmoke; color:black"
!'''Allowed materials'''
!'''Allowed materials'''
|
|
All wafers have to be RCA cleaned.
*All processed wafers have to be RCA cleaned, except wafers from LPCVD furnaces and PECVD4.  
Except for Boron pre-dep wafer from furnace A1.
|
All wafers have to be RCA cleaned.  
|
|
All wafers have to be RCA cleaned.
*All processed wafers have to be RCA cleaned, except wafers from the Wafer Bonder 02 and from PECVD4 and PECVD3.
Except for Phosphorous pre-dep wafers from furnace A4.
|
|
All processed wafers have to be RCA cleaned.
*Wafers and samples with Al and ALD deposited AL<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub>
Except for wafers from LPCVD furnace and PECVD1.
|
|
All wafers have to be RCA cleaned.  
*Samples for resist pyrolysis.
Except for wafers from EVG-NIL, PECVD3 and wafer for annealing of aluminum.
*No metals allowed
|
|
Only new wafers
*Silicon
*Silicon oxides and nitrides
*Quartz
*Metals - ask for permission
*III-V materials - '''below 440 °C''', otherwise it can lead to outgassing of toxic gases.
|
|
Almost all meterials
*Silicon
*Silicon Nitride
*Aluminum Oxide
|-
|-
|}
|}


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