Specific Process Knowledge/Lithography/EBeamLithography/JEOLJobPreparation: Difference between revisions
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ACC 100 | ACC 100 | ||
CALPRM '2na_ap4' | CALPRM '2na_ap4' | ||
DEFMODE 2 | DEFMODE 2 | ||
FFOCUS | |||
RESIST 240 | RESIST 240 | ||
SHOT A,16 | SHOT A,16 | ||
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This parameter determines if the system writes in 2 deflector mode or 1 deflector mode. In 2 deflector mode the primary deflector positions the beam within the main writing field with the subdeflector positions the beam with each 4 x 4 µm subfield. Writing speed is significantly higher in 2 deflector mode and the system should always be used in mode 2. | This parameter determines if the system writes in 2 deflector mode or 1 deflector mode. In 2 deflector mode the primary deflector positions the beam within the main writing field with the subdeflector positions the beam with each 4 x 4 µm subfield. Writing speed is significantly higher in 2 deflector mode and the system should always be used in mode 2. | ||
'''FFOCUS''' | |||
Field Focus was added to the system in 2021. It allows the system to adjust beam focus individually for each writing field based on a sample surface height map generated with HEIMAP. If FFOCUS is omitted the HEIMAP matrix will be used to calculated a single average sample height and beam focus will be set to this value. If FFOCUS is used the HEIMAP data will be used to generate a surface map and each individual writing field will be exposed with a beam focus based on this surface map. This function can not be used with height data obtained from SETWFR or CHIPAL. | |||
'''RESIST [dose]''' | '''RESIST [dose]''' | ||