Specific Process Knowledge/Lithography/EBeamLithography/JEOLJobPreparation: Difference between revisions
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In the following we will discuss details of the most commonly used commands in the SDF and JDF and provide example files for various types of jobs. We will start with a simple exposure without pattern alignment, i.e. a first print exposure. In JEOL terminology this is called “mask exposure mode” whereas exposure with alignment is refered to as “direct exposure mode”. | In the following we will discuss details of the most commonly used commands in the SDF and JDF and provide example files for various types of jobs. We will start with a simple exposure without pattern alignment, i.e. a first print exposure. In JEOL terminology this is called “mask exposure mode” whereas exposure with alignment is refered to as “direct exposure mode”. | ||
Templates for SDF and JDF files can be found on the Cleanroom drive here: O:\CleanroomDrive\_JEOL9500Training\Templates | |||
=First print - mask exposure mode= | =First print - mask exposure mode= | ||
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ACC 100 | ACC 100 | ||
CALPRM '2na_ap4' | CALPRM '2na_ap4' | ||
DEFMODE 2 | DEFMODE 2 | ||
FFOCUS | |||
RESIST 240 | RESIST 240 | ||
SHOT A,16 | SHOT A,16 | ||
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This parameter determines if the system writes in 2 deflector mode or 1 deflector mode. In 2 deflector mode the primary deflector positions the beam within the main writing field with the subdeflector positions the beam with each 4 x 4 µm subfield. Writing speed is significantly higher in 2 deflector mode and the system should always be used in mode 2. | This parameter determines if the system writes in 2 deflector mode or 1 deflector mode. In 2 deflector mode the primary deflector positions the beam within the main writing field with the subdeflector positions the beam with each 4 x 4 µm subfield. Writing speed is significantly higher in 2 deflector mode and the system should always be used in mode 2. | ||
'''FFOCUS''' | |||
Field Focus was added to the system in 2021. It allows the system to adjust beam focus individually for each writing field based on a sample surface height map generated with HEIMAP. If FFOCUS is omitted the HEIMAP matrix will be used to calculated a single average sample height and beam focus will be set to this value. If FFOCUS is used the HEIMAP data will be used to generate a surface map and each individual writing field will be exposed with a beam focus based on this surface map. This function can not be used with height data obtained from SETWFR or CHIPAL. | |||
'''RESIST [dose]''' | '''RESIST [dose]''' | ||
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Also notice that if an array element is assigned several times, it is the last assignment that will be used. | Also notice that if an array element is assigned several times, it is the last assignment that will be used. | ||
The ASSIGN command can be used to build arrays of arrays to a depth of 9 sub arrays | The ASSIGN command can be used to build arrays of arrays to a depth of 9 sub arrays. | ||
'''SKIP (j,k)''' | '''SKIP (j,k)''' | ||
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|- | |- | ||
| colspan="1" style="text-align:center;| | | colspan="1" style="text-align:center;| | ||
Illustration of wafer scale pattern alignment and chip array alignment for two designs, L1 and L2. | Illustration of wafer scale pattern alignment and chip array alignment for two designs, L1 and L2. The goal is to align the L2 pattern to the L1 pattern. | ||
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|} | |} | ||
===Chip alignment | ===Chip alignment SDF === | ||
<pre> | <pre> | ||
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ACC 100 | ACC 100 | ||
CALPRM '6na_ap5' | CALPRM '6na_ap5' | ||
DEFMODE 2 | DEFMODE 2 | ||
GLMDET S | GLMDET S | ||
CHIPAL 1 | CHIPAL 1 | ||
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If set up properly on good quality marks mode 1 or mode 4 chip alignment can usually execute in about 1-2 seconds per mark. The time estimate at compilation will account for the time spend on chip alignment at the current settings of the '''CHIPAL''' subprogram. | If set up properly on good quality marks mode 1 or mode 4 chip alignment can usually execute in about 1-2 seconds per mark. The time estimate at compilation will account for the time spend on chip alignment at the current settings of the '''CHIPAL''' subprogram. | ||
===Chip alignment | ===Chip alignment JDF === | ||
In addition to the use of '''CHMPOS''' for chip mark position definition the example below illustrate making arrays of an array. The first array is set up as a 2x2 array assigning array '''A1'''. '''A1''' is defined below as '''1:''', since '''1''' is defined as an array it can be referenced as '''A1'''. '''A''' then defines a 5x5 array assigning pattern '''P(1)''' to each element. The chip mark position command must be used in the same array that assigns the corresponding pattern. | In addition to the use of '''CHMPOS''' for chip mark position definition the example below illustrate making arrays of an array. The first array is set up as a 2x2 array assigning array '''A1'''. '''A1''' is defined below as '''1:''', since '''1''' is defined as an array it can be referenced as '''A1'''. '''A''' then defines a 5x5 array assigning pattern '''P(1)''' to each element. The chip mark position command must be used in the same array that assigns the corresponding pattern. | ||
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LAYER 1 | LAYER 1 | ||
P(1) ' | P(1) 'thope230126.v30' | ||
SPPRM 4.0,,,,1.0,1 | SPPRM 4.0,,,,1.0,1 | ||
STDCUR 6 | STDCUR 6 | ||
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It V1 mode it is customary to set M1 = (0,0) such that substrate height is detected at the center of the chip. In this way V1 mode can be used to exactly read out substrate height where the chip pattern will be written. | It V1 mode it is customary to set M1 = (0,0) such that substrate height is detected at the center of the chip. In this way V1 mode can be used to exactly read out substrate height where the chip pattern will be written. | ||
=Beam current and condition files= | |||
The beam current can in principle be changed in very fine steps, it however requires recalibration of the Dynamic Focus and Dynamic Stigmation table. Hence, only a limited number of beam currents are available. The available beam currents and condition file name are listed below. | |||
{| class="wikitable" | |||
|+ Condition files and beam current | |||
|- | |||
! Beam current [nA] !! Aperture !! Condition file | |||
|- | |||
| 0.12 || 4 || 0.12na_ap4 | |||
|- | |||
| 0.16 || 4 || 0.16na_ap4 | |||
|- | |||
| 0.22 || 4 || 0.22na_ap4 | |||
|- | |||
| 0.4 || 4 || 0.4na_ap4 | |||
|- | |||
| 0.5 || 4 || 0.5na_ap4 | |||
|- | |||
| 0.8 || 4 || 0.8na_ap4 | |||
|- | |||
| 1.4 || 4 || 1.4na_ap4 | |||
|- | |||
| 1.6 || 4 || 1.6na_ap4 | |||
|- | |||
| 2 || 4 || 2na_ap4 | |||
|- | |||
| 2.7 || 4 || 2.7na_ap4 | |||
|- | |||
| 3.8 || 5 || 3.8na_ap5 | |||
|- | |||
| 4 || 4 || 4na_ap4 | |||
|- | |||
| 5 || 5 || 5na_ap5 | |||
|- | |||
| 6 || 5 || 6na_ap5 | |||
|- | |||
| 10 || 6 || 10na_ap6 | |||
|- | |||
| 12 || 5 || 12na_ap5 | |||
|- | |||
| 14 || 8 || 14na_ap8 | |||
|- | |||
| 19 || 7 || 19na_ap7 | |||
|- | |||
| 21 || 7 || 21na_ap7 | |||
|- | |||
| 22 || 7 || 22na_ap7 | |||
|- | |||
| 25 || 7 || 25na_ap7 | |||
|- | |||
| 27 || 7 || 27na_ap7 | |||
|- | |||
| 29 || 7 || 29na_ap7 | |||
|- | |||
| 30 || 8 || 30na_ap8 | |||
|- | |||
| 36 || 8 || 36na_ap8 | |||
|- | |||
| 41 || 8 || 41na_ap8 | |||
|- | |||
| 44 || 8 || 44na_ap8 | |||
|- | |||
| 54 || 7 || 54na_ap7 | |||
|- | |||
| 60 || 8 || 60na_ap8 | |||
|} | |||