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=JEOL 9500 Job Preparation =
= Introduction =
 
== Introduction ==


In order to write a pattern with the e-beam system you will have to generate a set of job files. These files are essentially a set of instructions which tell the system what pattern to write, where to place each pattern along with specific writing conditions, exposure dose, alignment conditions and calibration conditions. Apart from this you will naturally also have to generate the pattern you wish to expose.  
In order to write a pattern with the e-beam system you will have to generate a set of job files. These files are essentially a set of instructions which tell the system what pattern to write, where to place each pattern along with specific writing conditions, exposure dose, alignment conditions and calibration conditions. Apart from this you will naturally also have to generate the pattern you wish to expose.  
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At DTU Nanolab it is a strict requirement that all job files are prepared ahead of an exposure session. The JEOL 9500 system is a valuable resource and users must always show up well prepared not to waste tool time on file preparation. '''Users who squander valuable tool time away due to poor preparation will lose access to the tool.'''
At DTU Nanolab it is a strict requirement that all job files are prepared ahead of an exposure session. The JEOL 9500 system is a valuable resource and users must always show up well prepared not to waste tool time on file preparation. '''Users who squander valuable tool time away due to poor preparation will lose access to the tool.'''


== JEOL 9500 file types and generalized flow ==
= JEOL 9500 file types and generalized flow =


[[File:MGN3.png|500px|thumb|right|Generalized job flow.]]
[[File:MGN3.png|500px|thumb|right|Generalized job flow.]]
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In the following we will discuss details of the most commonly used commands in the SDF and JDF and provide example files for various types of jobs. We will start with a simple exposure without pattern alignment, i.e. a first print exposure. In JEOL terminology this is called “mask exposure mode” whereas exposure with alignment is refered to as “direct exposure mode”.
In the following we will discuss details of the most commonly used commands in the SDF and JDF and provide example files for various types of jobs. We will start with a simple exposure without pattern alignment, i.e. a first print exposure. In JEOL terminology this is called “mask exposure mode” whereas exposure with alignment is refered to as “direct exposure mode”.


== Schedule File - no alignment ==
Templates for SDF and JDF files can be found on the Cleanroom drive here: O:\CleanroomDrive\_JEOL9500Training\Templates
 
=First print - mask exposure mode=
== Schedule File ==
A simple example of a SDF is shown below. It has a single sequence and hence it will expose a single substrate. A detailed description of the commands is given below. Comments can be added using semicolon, as illustrated in the first line.
A simple example of a SDF is shown below. It has a single sequence and hence it will expose a single substrate. A detailed description of the commands is given below. Comments can be added using semicolon, as illustrated in the first line.


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ACC 100                       
ACC 100                       
CALPRM '2na_ap4'             
CALPRM '2na_ap4'             
DEFMODE 2                    
DEFMODE 2  
FFOCUS                   
RESIST 240                     
RESIST 240                     
SHOT A,16                       
SHOT A,16                       
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'''%[slot ID]'''
'''%[slot ID]'''


Most cassettes have multiple substrate slots. This designates which slot of the cassette to expose. 6” cassettes only have a single slot but one must still designate that slot. In the example slot 4A will be exposed. This is slot A of a 4” wafer cassette.  
Some cassettes have multiple substrate slots. This designates which slot of the cassette to expose. 6” and 8" cassettes only have a single slot but one must still designate that slot. In the example slot 4A will be exposed. This is slot A of a 4” wafer cassette.  


'''JDF [‘name’],[layer number]'''
'''JDF [‘name’],[layer number]'''


This specifies the name of the JDF for the exposure and the layer number of the JDF to use. The JDF can be set up to have multiple layers each addressing its own pattern file if needed. Please note this “layer” has nothing to do with layers of the pattern file. We advise users to name their JDF with user initials followed by exposure date. In the example the JDF called is “thope220101.jdf” using layer 1.
This specifies the name of the JDF for the exposure and the layer number of the JDF to use. The JDF can be set up to have multiple layers typically used to specify different beam currents to various designs. Please note this “layer” has nothing to do with layers of the pattern file. We advise users to name their JDF with user initials followed by exposure date. In the example the JDF called is “thope220101.jdf” using layer 1.


'''ACC [acceleration voltage]'''
'''ACC [acceleration voltage]'''
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This parameter determines if the system writes in 2 deflector mode or 1 deflector mode. In 2 deflector mode the primary deflector positions the beam within the main writing field with the subdeflector positions the beam with each 4 x 4 µm subfield. Writing speed is significantly higher in 2 deflector mode and the system should always be used in mode 2.
This parameter determines if the system writes in 2 deflector mode or 1 deflector mode. In 2 deflector mode the primary deflector positions the beam within the main writing field with the subdeflector positions the beam with each 4 x 4 µm subfield. Writing speed is significantly higher in 2 deflector mode and the system should always be used in mode 2.
'''FFOCUS'''
Field Focus was added to the system in 2021. It allows the system to adjust beam focus individually for each writing field based on a sample surface height map generated with HEIMAP. If FFOCUS is omitted the HEIMAP matrix will be used to calculated a single average sample height and beam focus will be set to this value. If FFOCUS is used the HEIMAP data will be used to generate a surface map and each individual writing field will be exposed with a beam focus based on this surface map. This function can not be used with height data obtained from SETWFR or CHIPAL.


'''RESIST [dose]'''
'''RESIST [dose]'''


This determines the exposure dose in units of µC/cm2. In the example a dose of 240 µC/cm2 is used. In many cases it can be necessary to perform a dose test to get the optimum result. A dose test can be set up in several ways, please consult with the dose testing section in Labmanager.
This determines the exposure dose in units of µC/cm2. The beam dwell time is automatically adjusted to achieve this area dose based on the latest beam current measurement. In the example a dose of 240 µC/cm2 is used. In many cases it can be necessary to perform a dose test to get the optimum result. A dose test can be set up in several ways, please consult with the dose testing section in Labadviser.


'''SHOT A,[number]'''
'''SHOT A,[number]'''
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The SHOT A command determines the beam pitch, i.e. the distance between beam positions when filling in a pattern. The beam pitch grid is 0.25 nm and hence the number stated here signifies the beam pitch in units of 0.25 nm. In the example a beam pitch of 16 units will result in a beam pitch of 4 nm.
The SHOT A command determines the beam pitch, i.e. the distance between beam positions when filling in a pattern. The beam pitch grid is 0.25 nm and hence the number stated here signifies the beam pitch in units of 0.25 nm. In the example a beam pitch of 16 units will result in a beam pitch of 4 nm.


'''OFFSET(x,y)'''
'''OFFSET[x,y]'''


The OFFSET command can be used to shift the position of the entire content of the referenced JDF, unit is µm. In the example the pattern specified in the JDF is shifted 5000 µm left and 1000 µm up.
The OFFSET command can be used to shift the position of the entire content of the referenced JDF, unit is µm. In the example the pattern specified in the JDF is shifted 5000 µm left and 1000 µm up. For first print (unaligned) exposures one can use the offset command to move patterns as wanted. For exposure with alignment this is however not the case, for aligned exposures the offset command must be used to state the offset of the pattern from the substrate center as determined by the optical pre-aligner.


===SDF footer section===
===SDF footer section===
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The END command serves two purposes. First of all it tells the software that this is the end of the job. Secondly, the number after the END command determines which cassette to load from the autoloader to the stage after job execution. In the example a pattern is written on cassette 8 and since the END command also ends with 8, no cassette change is made. If it had terminated with '''END 1''', cassette 8 would be transferred out and cassette 1 would be transferred in after pattern writing. If the job terminates with an END command without a number, the current cassette will be unloaded and the stage left empty. This is not allowed since the stage will loose position tracking after extended time without a cassette on stage. Always either leave the current cassette on stage or transfer another cassette.
The END command serves two purposes. First of all it tells the software that this is the end of the job. Secondly, the number after the END command determines which cassette to load from the autoloader to the stage after job execution. In the example a pattern is written on cassette 8 and since the END command also ends with 8, no cassette change is made. If it had terminated with '''END 1''', cassette 8 would be transferred out and cassette 1 would be transferred in after pattern writing. If the job terminates with an END command without a number, the current cassette will be unloaded and the stage left empty. This is not allowed since the stage will loose position tracking after extended time without a cassette on stage. Always either leave the current cassette on stage or transfer another cassette.


If there is any uncertainty about the job executing correctly, always use the '''END''' command followed by the cassette used during the exposure. If execution of a sequence fails for some reason the software will consider the sequence as executed and move on to the next part of the SDF file. If this is an '''END''' command that changes to another cassette the cassettte will simply be exchanged without giving the user a chance to correct the error and try again.
If there is any uncertainty about the job executing correctly, always use the '''END''' command followed by the cassette used during the exposure. If execution of a sequence fails the software will consider the sequence as executed and move on to the next part of the SDF file. If this is an '''END''' command that changes to another cassette the cassettte will simply be exchanged without giving the user a chance to correct the error and try again.


== Job Deck File – no alignment ==
== Jobdeck File ==
One or more Jobdeck files (.jdf) is needed for an exposure. As a minimum the JDF file must contain information of what pattern to write and where to write it. It can also be used to specify alignment information. The filename is limited to 24 characters, no capital letters and no spaces.
One or more Jobdeck files (.jdf) is needed for an exposure. As a minimum the JDF file must contain information of what pattern to write and where to write it. It can also be used to specify alignment information. The filename is limited to 24 characters, no capital letters and no spaces.
The JDF file has a common block and one or more layer blocks. The layer blocks can be used to define several patterns and several writing conditions in a single file. A simple example of a JDF is given below.
The JDF file has a common block and one or more layer blocks. The layer blocks can be used to define several patterns and several writing conditions in a single file. A simple example of a JDF with a single layer block is given below.  


<pre>
<pre>
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</pre>
</pre>


===JDF header block===
===JDF common block===
'''JOB [/W] [‘name’], d1 [, d2]'''
'''JOB [/W] [‘name’], d1 [, d2]'''


The common block starts with a JOB command. The /W switch indicates a round wafer slot, if omitted the system expects a square mask slot. Almost all cassettes at DTU Nanolab are wafer cassettes and thus require the /W switch for the pattern to be exposed at the correct slot coordinates. The name is optional and limited to 9 alphanumeric characters in uppercase. Following the optional name is the slot size designation, unit is inches. In the example it is a 4” wafer. A second dimension (d2) can be added to constrain chip placement from the ARRAY command within that dimension. Please refer to Figure 2 for an example of this.
The common block starts with a JOB command. The /W switch indicates a round wafer slot, if omitted the system expects a square mask slot. Almost all cassettes at DTU Nanolab are wafer cassettes and thus require the /W switch for the pattern to be exposed at the correct slot coordinates. The name is optional and limited to 9 alphanumeric characters in uppercase. Following the optional name is the slot size designation '''d1''', unit is inches. In the example it is a 4” wafer. A second dimension '''d2''' can be added to constrain chip placement from the ARRAY command within that dimension, see below for an example of this.


Be aware that the chip cassettes at DTU Nanolab are converted 3” wafer cassettes and hence the correct header for an exposure on these will be “ JOB /W ‘name’, 3”.
Be aware that the chip cassettes at DTU Nanolab are converted 3” wafer cassettes and hence the correct header for an exposure on these will be '''JOB /W ‘name’, 3'''.
 
{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
|-
| [[image:EBL_Achk_limit.png|300px]]
|-
| colspan="1" style="text-align:center;|
Example of a 10 x 10 chip array on a 4" wafer using a 3.6" circular cutout. Notice that chips must fall completely outside the boundary to be omitted. Pre exposure pattern placement visualization is done with the ACHK program.
|}


Figure 2: Example of a 10 x 10 chip array on a 4" wafer using a 3.6" circular cutout. Notice that chips must fall completely outside the boundary to be omitted. Pre exposure pattern placement visualization is done with the ACHK program.


'''PATH [‘name’]'''
'''PATH [‘name’]'''
The PATH command defines the start of a writing path and defines the initial calibration routine carried out before pattern exposure as well as the cyclic calibration routine carried out during exposure. The PATH name refers to the exact name of the PATH as it exists on the system, the full list of available paths is available here [LINK].
The PATH command defines the start of a writing path and defines the initial calibration routine carried out before pattern exposure as well as the cyclic calibration routine carried out during exposure. The PATH name refers to the exact name of the PATH as it exists on the system, the full list of [[Specific Process Knowledge/Lithography/EBeamLithography/FilePreparation/Pathlist|available paths is available here.]]  


<pre>
<pre>
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Also notice that if an array element is assigned several times, it is the last assignment that will be used.
Also notice that if an array element is assigned several times, it is the last assignment that will be used.


The ASSIGN command can be used to build arrays of arrays to a depth of 9 sub arrays. For examples of sub arrays please refer to our specific page on the ASSIGN command.
The ASSIGN command can be used to build arrays of arrays to a depth of 9 sub arrays.


'''SKIP (j,k)'''
'''SKIP (j,k)'''
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The JDF is terminated with a END command.
The JDF is terminated with a END command.


==Beam pitch, beam current and exposure dose relationship==
=Alignment exposure=
A sample is exposed at a user selected beam current to provide a user defined exposure dose. The system will calculate the shot time (dwell time) of the beam to provide the requested dose. It is clear that high doses will require long dwell times whereas low doses will require short dwell times. There is however another important parameter to the dwell time calculation and that is the beam/shot pitch, i.e. how far beam shots are placed from each other. The beam scanner on the JEOL 9500 system is 100 MHz, thus the temporal resolution is 10 ns and it is not possible to have a beam shot (or dwell time) less than 10 ns. This, in combination with selected beam current and exposure dose will set a lower limit on the beam pitch.
As described in the pattern preparation section there is two different strategies for pattern alignment. One can expose a wafer scale layout based on two global alignment marks or one can do chip exposures where each chip is individually aligned to an individual chip mark, as illustrated below. In both cases the SDF and JDF files have to be expanded with additional features to call and define the alignment procedure. Below is two examples, one for global alignment and one for chip alignment. Only new commands relative to the above example will be commented.
 
{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
|-
| [[image:EBL_align.png|1000px]]
|-
| colspan="1" style="text-align:center;|
Illustration of wafer scale pattern alignment and chip array alignment for two designs, L1 and L2. The goal is to align the L2 pattern to the L1 pattern.
|}
 
==Global alignment==
The following files set up a single pattern for exposure with global alignment. To execute global alignment a few extra commands are used compared to the previous example. Only new commands are explained below.
 
===Global alignment SDF===
<pre>
MAGAZIN    'ELELOP'
 
#8                           
% 4A                         
JDF    'elelop230401',1
ACC 100                       
CALPRM '6na_ap5'     
DEFMODE 2                   
 
GLMDET A
CHIPAL 0
HSWITCH ON,OFF
 
RESIST 152                 
SHOT A,32                 
OFFSET(-150,233)                 
 
END 8
</pre>
 
Compared to the first print exposure the SDF file has three extra commands, '''GLMDET''', '''CHIPAL''' and '''HSWITCH'''. Additionally, the '''OFFSET''' command serves a somewhat different purpose now as explained below.
 
'''GLMDET [mode]'''
 
'''GLMDET''' (GLobal Mark DETect) has four modes
 
*A - for automatic alignment
*S - for semi automatic alignment
*M - for manual alignment
*C - for cancel, i.e. no alignment
 
In automatic mode the system will execute the '''SETWFR''' subprogram to find the global alignment marks (P and Q) by beam scans. '''SETWFR''' will execute mark detection at the P and Q mark locations defined in the JDF file. If alignment fails the system will continue to the next sequence in the SDF file. In semi automatic mode the system will carry out the same alignment procedure as automatic mode but if the mark scan fails the system will ask the user to use SEM mode to manually find the mark. When the mark is found in SEM mode the user can choose to designate the position as the true mark position or request another beam scan at the found location. Thus, semi automatic is somewhat more versatile at it allows the user to manually find the mark upon failure. Manual alignment allows the user to use SEM mode and manually find and identify the location of the center of the mark. Cancel mode skips global alignment. In the example above automatic alignment is used.
 
 
'''CHIPAL [mode]'''
 
'''CHIPAL''' has six modes and is explained in the section below on chip alignment. Even though chip alignment is not used during global alignment it is necessary to include the command and set it to either 0, V1 or V4, as explained below. In the example above '''CHIPAL''' is disregarded by setting it to 0.
 
 
'''HSWITCH [swg,swc]'''
 
'''HSWITHC''' specifies the substrate height detection mode for aligned exposure. It takes two parameters '''swg''' and '''swc''' which are merely two ON/OFF switches for global mark and chip marks, respectively. If '''swg''' is set to ON the system will carry out substrate height measurement at the global mark positions. If '''swc''' is set to ON the system will carry out substrate height measurement at the chip mark positions. Thus this is a convenient way to have the system measure substrate height and adjust beam focus to chip placement positions. In the example above the global mark positions are used for height detection of the substrate.
 
 
'''OFFSET[x,y]'''
 
For aligned exposures the '''OFFSET''' command must be used to state the offset of the P mark as determined by the optical pre-aligner. This offset will be applied to the entire content of the JDF file, i.e. the offset is used to shift the mark scan detection position. In the example above the pre-aligner was used to determine the P mark is shifted -150 µm in x and 233 µm in y relative to the center of the exposure/cassette slot.
 
===Global alignment JDF===
<pre>
JOB/W    'ELELOP',4
 
GLMPOS P =(-36000,0), Q=(36000,0)
GLMP 2, 450,0,0
 
PATH DRF5M
  ARRAY (0,1,0)/(0,1,0) ;
ASSIGN P(1) -> (*,*) ;
  AEND
PEND
 
LAYER 1
P(1)  'elelop_GIST_L2.v30'
SPPRM 4.0,,,,1.0,1
STDCUR  6.6
OBJAPT 5
     
END
</pre>
 
The JDF file has two additional commands, '''GLMPOS''' and '''GLMP'''.
 
 
'''GLMPOS [P=(x1,y1), Q=(x2,y2)]'''
 
'''GLMPPOS''' defines the global alignment mark coordinates in the substrate coordinate system and hence where '''SETWFR''' will perform beam scans for mark detection, unit is µm. In the example file the global marks are located at x = ±36000 µm and y = 0.
 
 
'''GLMP [w,l,t,f]'''
 
'''GLMP''' allows the user to add dimension information about the alignment mark and toggle between a cross and an L mark. The first parameter, '''w''', defines the width of the mark, unit is µm. The second parameter, '''l''', defines the length of the mark, unit is µm. For a cross this is the length of a single leg of the cross. The third parameter, '''t''' allows the user to toggle between a cross (0) and an L (1). The last parameter, '''f''', defines the rotation of the mark in case an L mark is used. It is most advisable to use a cross, i.e. keep the last two parameters at 0. In the example above a 2 µm line width cross with a length of 450 µm is used.
 
==Chip alignment==
Chip alignment requires a global alignment to be made first to establish the wafer coordinate system. Hence a global alignment using '''GLMDET''' is used initially as in the example above. To further illustrate chip alignment we will look at a particular layout shown below. The layout also illustrates a commonly used feature on the JEOL system to create arrays of arrays. In the layout below there is main 2x2 array and into each of these is a 5x5 subarray. Each element of the subarray is a single chip with four chip alignment marks. Notice that array placement is given in the substrate coordinate system and so is the global mark positions. Chip alignment marks (M1-M4) are however given in the local chip coordinate system. In the example files below we assume L1 is already defined on the substrate and we wish to align L2 to it.  


The relation might not be obvious at first and is illustrated below. The two identical features are filled with beam shots at two different pitches. the right version has a lower beam pitch (half of the other) and thus there are simply many more beam shots. Consequently, to provide the same area exposure dose the shot time for the right side feature will be much shorter. At half the pitch there will be four times the number of beam shots and thus the shot time will be 1/4 the shot time of the left feature.
Since a pattern (V30 file) is placed at the center of the bounding box it is essential to control the bounding box of the chip design. The design in this case appears symmetric around (0,0) but in order to force it to be symmetric it is common to place corner marks at equidistance points from (0,0). The corner marks can be 1 nm boxes that will not show up in the resist when developed.


{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
{| style="border: none; border-spacing: 0; margin: 1em auto; text-align: center;"
|-
|-
| [[image:BeamPitch.png|500px]]
| [[image:EBLChipAlignExample.png|1200px]]
|-  
|-  
| colspan="1" style="text-align:center;|
| colspan="1" style="text-align:center;|
Example feature filled with beam shots at one times beam diameter (left) and half beam diameter (right). Illustration: Thomas Pedersen.
Illustration of chip alignment using a chip array instanced into another array. Notice in the right most illustration how four corner marks are used to force symmetry around (0,0) such that the pattern is placed correctly.
|}
|}


The shot time can be calculated as ''t = D·p<sup>2</sup>/I'', where ''D'' is the dose in µC/cm<sup>2</sup>, ''p'' is beam pitch and ''I'' is current. As a practical example let us consider an exposure at 2 nA beam current and a desired dose of 250 µC/cm<sup>2</sup>. At 4 nm beam pitch the shot time will come out to 20 ns, while at 2 nm beam pitch it will come out at 5 ns and thus violate the hardware limitation of 10 ns. In order to expose the pattern with 2 nm shot pitch one would have to choose a lower beam current at the expense of increased writing time.
===Chip alignment SDF ===
 
<pre>
MAGAZIN 'THOPE'


The shot time is in fact such an important number that the system will specifically display the minimum shot time for each sequence at the end of job file compilation as illustrated below. In this case the exposure consists of five sequences with a few different doses and beam currents and the shot pitch (scanstep) has been adjusted to make sure all shot times are below 10 ns. Bear in mind the shot pitch (scanstep) is in units of 0.25 nm, thus sequence 1 is written at 4 nm shot pitch.
#8
%4C   
JDF 'thope230126',1
ACC 100
CALPRM '6na_ap5'
DEFMODE 2     
GLMDET S
CHIPAL 1
HSWITCH OFF,ON
RESIST 250
SHOT A,6
OFFSET(-44,-139)
 
END 8
</pre>
 
 
'''CHIPAL [mode]'''
 
'''CHIPAL''' has six modes
 
*0 - Cancels chip alignment
*S - SEM mode. The user is prompted to use SEM mode to manually find M1
*1 - One mark is used for position correction
*4 - Four marks are used for position, rotation and gain correction
*V1 - Virtual mode 1. A single mark position is used for height detection of the substrate, no position correction
*V4 - Virtual mode 4. Four mark positions are used for height detection of the substrate, no position correction
 
In addition to position correction mode 1 and 4 also detects substrate height. The virtual modes are only used to detect substrate height since no mark detection is done. Mode S obviously very time consuming for a high number of chips.
 
If set up properly on good quality marks mode 1 or mode 4 chip alignment can usually execute in about 1-2 seconds per mark. The time estimate at compilation will account for the time spend on chip alignment at the current settings of the '''CHIPAL''' subprogram.
 
===Chip alignment JDF ===
In addition to the use of '''CHMPOS''' for chip mark position definition the example below illustrate making arrays of an array. The first array is set up as a 2x2 array assigning array '''A1'''. '''A1''' is defined below as '''1:''', since '''1''' is defined as an array it can be referenced as '''A1'''. '''A''' then defines a 5x5 array assigning pattern '''P(1)''' to each element. The chip mark position command must be used in the same array that assigns the corresponding pattern.


<pre>
<pre>
Start estimation writing time   -----
JOB/W    'THOPE',4  ; 4inch wafer
Shot counting start -----
 
   thopeQU23008a.v30                                              at 11-MAR-2023 14:53:40
GLMPOS    P=(-30000,0),Q=(30000,0)
Shot counting end -----
 
PATH FT01
   ARRAY (-15000,2,30000)/(10000,2,20000)
ASSIGN A(1) -> ((1,1))
 
1: ARRAY (-4000,5,2000)/(4000,5,2000)
CHMPOS M1=(-450,450),M2=(450,450),M3=(450,-450),M4=(-450,-450)
ASSIGN P(1) -> (*,*)
 
   AEND
PEND


  Seq.  writing time    shottime[nsec]  resist[uC/cm2]  stdcur[nA]  scanstep
LAYER 1
  1         0:52:27            16.000          200.000        2.000        16
        P(1)  'thope230126.v30'
  2         0:13:46            13.500          200.000      12.000        36
         SPPRM 4.0,,,,1.0,1
  3        0:11:15            12.000         100.000      12.000        48
         STDCUR 6
  4        0:12:10            13.500          200.000      12.000        36
  5        0:11:14            12.000          100.000      12.000         48
  Total :    1:40:51


Estimation result file : thopeQU23008a.csv
END
End estimation writing making time    -----
</pre>
</pre>
'''CHMPOS [M1=(x1,y1){,M2=(x2,y2),M3=(x3,y3),M4=(x4,y4)}]'''
'''CHMPOS''' defines the chip alignment marks in the local chip coordinate system, unit is µm. M1 is mandatory while M2-M4 are optional in one mark mode. In four mark mode all marks must be defined. The order of the marks is important, M1 must be top left with M2-M4 placed clockwise around the center. In the given example the four marks are placed symmetrically at ±450 µm in x and ±450 µm in y.
It V1 mode it is customary to set M1 = (0,0) such that substrate height is detected at the center of the chip. In this way V1 mode can be used to exactly read out substrate height where the chip pattern will be written.
=Beam current and condition files=
The beam current can in principle be changed in very fine steps, it however requires recalibration of the Dynamic Focus and Dynamic Stigmation table. Hence, only a limited number of beam currents are available. The available beam currents and condition file name are listed below.
{| class="wikitable"
|+  Condition files and beam current
|-
! Beam current [nA] !! Aperture !! Condition file
|-
| 0.12 || 4 || 0.12na_ap4
|-
| 0.16 || 4 || 0.16na_ap4
|-
| 0.22 || 4 || 0.22na_ap4
|-
| 0.4 || 4 || 0.4na_ap4
|-
| 0.5 || 4 || 0.5na_ap4
|-
| 0.8 || 4 || 0.8na_ap4
|-
| 1.4 || 4 || 1.4na_ap4
|-
| 1.6 || 4 || 1.6na_ap4
|-
| 2 || 4 || 2na_ap4
|-
| 2.7 || 4 || 2.7na_ap4
|-
| 3.8 || 5 || 3.8na_ap5
|-
| 4 || 4 || 4na_ap4
|-
| 5 || 5 || 5na_ap5
|-
| 6 || 5 || 6na_ap5
|-
| 10 || 6 || 10na_ap6
|-
| 12 || 5 || 12na_ap5
|-
| 14 || 8 || 14na_ap8
|-
| 19 || 7 || 19na_ap7
|-
| 21 || 7 || 21na_ap7
|-
| 22 || 7 || 22na_ap7
|-
| 25 || 7 || 25na_ap7
|-
| 27 || 7 || 27na_ap7
|-
| 29 || 7 || 29na_ap7
|-
| 30 || 8 || 30na_ap8
|-
| 36 || 8 || 36na_ap8
|-
| 41 || 8 || 41na_ap8
|-
| 44 || 8 || 44na_ap8
|-
| 54 || 7 || 54na_ap7
|-
| 60 || 8 || 60na_ap8
|}
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