Specific Process Knowledge/Characterization/X-Ray Diffractometer: Difference between revisions
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==X-Ray Diffractometer== | '''Feedback to this page''': '''[mailto:nanolabsupport@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Characterization/X-Ray_Diffractometer click here]''' | ||
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'''<p style="color:red;">The X-Ray Diffractometer has been decomissioned. Please find other XRD setups at DTU Nanolab [[Specific Process Knowledge/Characterization/XRD| ''here''.]]</p>''' | |||
=Philips DCD IIH X-ray Diffractometer= | |||
[[file:X-ray_diffractometer.jpg|300px|right|thumb|X-ray diffractometer]] | [[file:X-ray_diffractometer.jpg|300px|right|thumb|X-ray diffractometer]] | ||
The Philips DCD IIH x-ray diffractometer used to characterize the layers on epitaxial semiconductor structures - usually III-V compound semiconductors. | The Philips DCD IIH x-ray diffractometer used to characterize the layers on epitaxial semiconductor structures - usually III-V compound semiconductors. | ||
X-ray diffraction is a non-destructive technique to measure the lattice mismatch of epitaxial grown layers. The resulting measurements are also know as rocking-curves. In this way it is possible to get the relative content of e.g. In in Ga<sub>x</sub>In<sub>1-x</sub>As grown on InP. Ga<sub>0.47</sub>In<sub>0.53</sub>As is lattice-matched to InP. Compunds containing three different materials are also called ternaries. | X-ray diffraction is a non-destructive technique to measure the lattice mismatch of epitaxial grown layers. The resulting measurements are also know as rocking-curves. In this way it is possible to get the relative content of e.g. In in Ga<sub>x</sub>In<sub>1-x</sub>As grown on InP. Ga<sub>0.47</sub>In<sub>0.53</sub>As is lattice-matched to InP. Compunds containing three different materials are also called ternaries. | ||