Specific Process Knowledge/Characterization/Thickness Measurer: Difference between revisions

← Older edit

VisualWikitext

@@ Line 1: / Line 1: @@
-=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=
+{{cc-nanolab}}
+'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Characterization/Thickness_Measurer click here]'''
+<br>
+<br>
+==Thickness Measurer==
+[[Image:Thicknessmeasurer2007.jpg|thumb|300x300px|Thickness Measurer. Positioned in cleanroom D-3]]
-'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Characterization/Thickness_Measurer click here]'''
+There are 2 thickness measurers in the cleanroom, both positioned in cleanroom D-3. The Thickness measurer is for measuring all sorts of samples. The thickness measurer (wafers) is solely for measuring the thickness of wafers or depths of grooves on wafers.
-==Thickness measurer==
+During a KOH etch it can be helpful to ensure no over-etching by making a thickness measurement during the etching.
-[[Image:??.jpg|thumb|300x300px|Thickness meassurer. Positioned in cleanroom 4]]
-The purpose is to measure the thickness of wafers, depths of larger grooves or height of larger mesas.
-Doing a KOH etch can it be helpful to insure no over etching by making a thickness measurement doing the etch.
-'''The user manual, technical information and contact information can be found in LabManager:'''
+The user manual, technical information and contact information can be found in
+[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=198 LabManager].
-'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=198 Thickness measurer]'''
+==Quality Control - Recipe Parameters and Limits==
+{| border="1" cellspacing="2" cellpadding="2" colspan="3"
+|bgcolor="#98FB98" |'''Quality Control (QC) for the Thickness measurer'''
+|-
+|
+The measured standard thickness is 0.1 mm. The measured result has to be within &plusmn; 0.005 mm. The QC is preformed once a year.
+*[http://www.labmanager.danchip.dtu.dk/d4Show.php?id=1831&mach=198 The QC procedure]<br>
+*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=198 The newest QC data]<br>
+|}
+<br> <br>
-==Process knowledge==
+==Equipment performance and process related parameters==
+{| border="2" cellspacing="2" cellpadding="3"
-==Equipment performance and process related parameters==
-{| border="2" cellspacing="2" cellpadding="0"
 |-
 !style="background:silver; color:black;" align="center"|
 Purpose
 |style="background:LightGrey; color:black"|
-Measurer the thinkness of silicon wafer
+Thickness measurer
 |style="background:WhiteSmoke; color:black"|
-??
+*Wafer thickness
+*Depths of larger grooves
+*Heigth of larger samples
 |-
 !style="background:silver; color:black" align="center"|
 Performance
 |style="background:LightGrey; color:black"|
-??
+Thickness resolution
 |style="background:WhiteSmoke; color:black"|
-??
+*< 1 µm
 |-
-!style="background:silver; color:black" align="center" valign="center" rowspan="3"|
+!style="background:silver; color:black" align="center" valign="center" rowspan="2"|
-Process parameter range
+Substrates
 |style="background:LightGrey; color:black"|
-Process Temperature
+Batch size
 |style="background:WhiteSmoke; color:black"|
-*800-1150 <sup>o</sup>C
+*One sample
 |-
-|style="background:LightGrey; color:black"|Process pressure
+| style="background:LightGrey; color:black"|Substrate materials allowed
+|style="background:WhiteSmoke; color:black"|
+*No restrictions
+|-
+|}
+<br>
+{| border="2" cellspacing="2" cellpadding="3"
+|-
+!style="background:silver; color:black;" align="center"|
+Purpose
+|style="background:LightGrey; color:black"|
+Thickness measurer (wafers)
 |style="background:WhiteSmoke; color:black"|
-*1 atm
+*Wafer thickness
+*Depths of larger grooves
 |-
-|style="background:LightGrey; color:black"|Gasses on the system
+!style="background:silver; color:black" align="center"|
+Performance
+|style="background:LightGrey; color:black"|
+Thickness resolution
 |style="background:WhiteSmoke; color:black"|
+*< 1 µm
 |-
-!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
+!style="background:silver; color:black" align="center" valign="center" rowspan="2"|
-|style="background:LightGrey; color:black"|Batch size
+Substrates
+|style="background:LightGrey; color:black"|
+Batch size
 |style="background:WhiteSmoke; color:black"|
-*1-30 100 mm wafers (or 50 mm wafers) per run
+*One sample
 |-
 | style="background:LightGrey; color:black"|Substrate materials allowed
 |style="background:WhiteSmoke; color:black"|
-*Silicon wafers (RCA cleaned) without metal bulk contamination
+*Only wafers
 |-
 |}
-'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Characterization/Thickness_Measurer click here]'''
-This is a micrometer-screw.
-[[image:Mikrometerskrue_hel_a.JPG|200x200px|right|thumb|The Thickness measurer in Cleanroom 3 ]]
-It measures with an accurracy within a few µm.
-The range is from a few µm up to 5mm.
-Measure the wafer in the box next to the meter. If this is ok, then other wafers can be measured.
-There is a calibration device by the DEKTAK.
-It is calibrated at 750µm.