Specific Process Knowledge/Characterization/SIMS: Secondary Ion Mass Spectrometry: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Characterization/SIMS:_Secondary_Ion_Mass_Spectrometry click here]''' | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Characterization/SIMS:_Secondary_Ion_Mass_Spectrometry click here]''' | ||
= | '''<p style="color:red;">The Atomika SIMS has been decomissioned and is no longer available.</p>''' | ||
==Atomika SIMS== | |||
The SIMS analyses the composition of a sample by secondary ion mass spectroscopy. By using either oxygen or cesium ions accelerated by a high tension the surface of the sample is sputtered off as ions. These ions are analysed in a mass spectrometer and one can determine the elemental composition as a function of depth. If compared to signals from reference materials one can quantify the atomic composition - in certain cases down to extremely low concentrations (ppm). Doping levels and impurities may be determined.. | The SIMS analyses the composition of a sample by secondary ion mass spectroscopy. By using either oxygen or cesium ions accelerated by a high tension the surface of the sample is sputtered off as ions. These ions are analysed in a mass spectrometer and one can determine the elemental composition as a function of depth. If compared to signals from reference materials one can quantify the atomic composition - in certain cases down to extremely low concentrations (ppm). Doping levels and impurities may be determined.. | ||