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Specific Process Knowledge/Characterization/Lifetime scanner MDPmap: Difference between revisions

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=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=
{{cc-nanolab}}


'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Characterization/Lifetime_scanner_MDPmap click here]'''
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Characterization/Lifetime_scanner_MDPmap click here]'''
 
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[[image:Lifetimescanner04.jpg|400x400px|right|thumb|Lifetime scanner MPDmap, positioned in cleanroom F-2.]]
[[image:Lifetimescanner04.jpg|400x400px|right|thumb|Lifetime scanner MPDmap, positioned in cleanroom D-3.]]


== Microwave Detected Photoconductivity (MDP) ==
== Microwave Detected Photoconductivity (MDP) ==
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only by the diffusion length of the charge carriers.
only by the diffusion length of the charge carriers.


'''The user manual, control instruction, the user APV and contact information can be found in LabManager:'''
'''The user manual, the APV and contact information can be found in LabManager:'''


[http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=338 Lifetime scanner MPDmap info page in LabManager],
[http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=338 Lifetime scanner MPDmap info page in LabManager],
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== Performance information ==
== Performance information ==


'''Range of lifetimes''': 20 ns to several ms
'''The resistivity range for lifetime measurements''' 0.2 to 100 Ohm.cm, p/n
'''Material''': Silicon, epitaxial layers, partially or fully processed wafers, compound semiconductors and beyond.
'''Measureable properties''': Carrier lifetime (steady state or non equilibrium (µ -PCD) selectable), photoconductivity (steady state) microwave Photoconductance Decay (µ-PCD)


==Equipment performance and process related parameters==
==Equipment performance and process related parameters==
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*D-3
*Cx1
|-
 
!style="background:silver; color:black;" align="center" width="60"|Performance
|style="background:LightGrey; color:black"|Resolution
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*
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Instrument specifics
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Instrument specifics
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*405 nm
*405 nm
**Power 5 mW to 100 mW
**Power 5 mW to 100 mW
*978 nm
*977 nm
**Power 5 mW to 140 mW
**Power 5 mW to 190 mW
*975 nm
*975 nm
**Power 0.5 W to 4.0 W
**Power 0.5 W to 4.0 W
*977 nm
**Power up to 200 µW
*Spot diameter for all laser 0.5 µm
*Spot diameter for all laser 0.5 µm
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Size
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*Sample sizs between 5 mm x 5 mm up to 16" or 210 mm x 210 mm
*Sample sizs between 5 mm x 5 mm up to 16" or 210 mm x 210 mm
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