Specific Process Knowledge/Characterization/Lifetime scanner MDPmap: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Characterization/Lifetime_scanner_MDPmap click here]''' | '''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Characterization/Lifetime_scanner_MDPmap click here]''' | ||
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[[image:Lifetimescanner04.jpg|400x400px|right|thumb|Lifetime scanner MPDmap, positioned in cleanroom F-2.]] | |||
== Microwave Detected Photoconductivity (MDP) == | |||
Topographic visualisation of electrically active defects or materiel properties at almost any production stage, allows for process optimization and performance prediction of devices. | |||
MDP is a contact less, non destructive measurement technology for the electrical characterization | |||
of a large variety of semiconductors. The mapping and visualization of so far not detectable | |||
defects was achieved by improving the sensitivity of a microwave detection system | |||
by several orders of magnitude. Electrical properties such as lifetime, τ, mobility, μ, and diffusion | |||
length, L, can be measured also at very low injection levels with a spatial resolution limited | |||
only by the diffusion length of the charge carriers. | |||
'''The user manual, the APV and contact information can be found in LabManager:''' | |||
'''The user manual | |||
[http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=338 Lifetime scanner MPDmap info page in LabManager], | |||
== Performance information == | == Performance information == | ||
'''Range of lifetimes''': 20 ns to several ms | |||
'''The resistivity range for lifetime measurements''' 0.2 to 100 Ohm.cm, p/n | |||
'''Material''': Silicon, epitaxial layers, partially or fully processed wafers, compound semiconductors and beyond. | |||
'''Measureable properties''': Carrier lifetime (steady state or non equilibrium (µ -PCD) selectable), photoconductivity (steady state) microwave Photoconductance Decay (µ-PCD) | |||
==Equipment performance and process related parameters== | ==Equipment performance and process related parameters== | ||
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* | *Cx1 | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Instrument specifics | !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Instrument specifics | ||
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*405 nm | *405 nm | ||
**Power 5 mW to 100 mW | **Power 5 mW to 100 mW | ||
* | *977 nm | ||
**Power 5 mW to | **Power 5 mW to 190 mW | ||
*975 nm | *975 nm | ||
**Power 0.5 W to 4.0 W | **Power 0.5 W to 4.0 W | ||
*977 nm | |||
**Power up to 200 µW | |||
*Spot diameter for all laser 0.5 µm | *Spot diameter for all laser 0.5 µm | ||
|- | |- | ||
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates | ||
|style="background:LightGrey; color:black"| | |style="background:LightGrey; color:black"|Size | ||
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*Sample sizs between 5 mm x 5 mm up to 16" or 210 mm x 210 mm | *Sample sizs between 5 mm x 5 mm up to 16" or 210 mm x 210 mm | ||