Specific Process Knowledge/Characterization/Lifetime scanner MDPmap: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Characterization/Lifetime_scanner_MDPmap click here]''' | '''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Characterization/Lifetime_scanner_MDPmap click here]''' | ||
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[[image:Lifetimescanner04.jpg|400x400px|right|thumb|Lifetime scanner MPDmap, positioned in cleanroom F-2.]] | |||
== Microwave Detected Photoconductivity (MDP) == | |||
Topographic visualisation of electrically active defects or materiel properties at almost any production stage, allows for process optimization and performance prediction of devices. | |||
MDP is a contact less, non destructive measurement technology for the electrical characterization | |||
of a large variety of semiconductors. The mapping and visualization of so far not detectable | |||
defects was achieved by improving the sensitivity of a microwave detection system | |||
by several orders of magnitude. Electrical properties such as lifetime, τ, mobility, μ, and diffusion | |||
length, L, can be measured also at very low injection levels with a spatial resolution limited | |||
only by the diffusion length of the charge carriers. | |||
'''The user manual, the APV and contact information can be found in LabManager:''' | |||
[http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=338 Lifetime scanner MPDmap info page in LabManager], | |||
== Performance information == | |||
'''Range of lifetimes''': 20 ns to several ms | |||
'''The resistivity range for lifetime measurements''' 0.2 to 100 Ohm.cm, p/n | |||
'''Material''': Silicon, epitaxial layers, partially or fully processed wafers, compound semiconductors and beyond. | |||
'''Measureable properties''': Carrier lifetime (steady state or non equilibrium (µ -PCD) selectable), photoconductivity (steady state) microwave Photoconductance Decay (µ-PCD) | |||
==Equipment performance and process related parameters== | |||
{| border="2" cellspacing="0" cellpadding="2" | |||
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment | |||
|style="background:WhiteSmoke; color:black"| <b>Lifetime scanner MDPmap </b> | |||
|- | |||
!style="background:silver; color:black;" align="center" width="60"|Purpose | |||
|style="background:LightGrey; color:black"| | |||
|style="background:WhiteSmoke; color:black"| | |||
*Carrier Lifetime | |||
*Photoconductivity | |||
|- | |||
!style="background:silver; color:black;" align="center" width="60"|Location | |||
|style="background:LightGrey; color:black"| | |||
|style="background:WhiteSmoke; color:black"| | |||
*Cx1 | |||
|- | |||
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Instrument specifics | |||
|style="background:LightGrey; color:black"|Detector | |||
|style="background:WhiteSmoke; color:black"| | |||
*Microwave detector | |||
|- | |||
|style="background:LightGrey; color:black"|Laser | |||
|style="background:WhiteSmoke; color:black"| | |||
*405 nm | |||
**Power 5 mW to 100 mW | |||
*977 nm | |||
**Power 5 mW to 190 mW | |||
*975 nm | |||
**Power 0.5 W to 4.0 W | |||
*977 nm | |||
**Power up to 200 µW | |||
*Spot diameter for all laser 0.5 µm | |||
|- | |||
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates | |||
|style="background:LightGrey; color:black"|Size | |||
|style="background:WhiteSmoke; color:black"| | |||
*Sample sizs between 5 mm x 5 mm up to 16" or 210 mm x 210 mm | |||
*Sample thickness 10 µm to 20 mm | |||
|- | |||
| style="background:LightGrey; color:black"|Allowed materials | |||
|style="background:WhiteSmoke; color:black"| | |||
*Any standard cleanroom materials. | |||
|- | |||
|} | |||