Specific Process Knowledge/Pattern Design/Mask Specifications: Difference between revisions
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: Chromium down | : Chromium down | ||
GDS-file: GLO006_v7.gds | GDS-file: GLO006_v7.gds<br> | ||
Top cell: wafer | Top cell: wafer | ||
Layer (GDS number): 01 | Layer (GDS number): 01 <br> | ||
Mask Type: Digitised data= Dark, right reading | Mask Type: ''Digitised data= Dark, right reading'' <br> | ||
Text(max 30 characters): init-2019-Nitride-etch | Text(max 30 characters): ''init-2019-Nitride-etch'' <br> | ||
Layer (GDS number): 02 | Layer (GDS number): 02 <br> | ||
Mask Type: Digitised data= Clear, Wrong reading | Mask Type: ''Digitised data= Clear, Wrong reading'' <br> | ||
Text(max 30 characters): init-2019-KOH-backside | Text(max 30 characters): ''init-2019-KOH-backside'' | ||
== For 7" masks == | == For 7" masks == | ||
All Layers: | All Layers: | ||
: 7" chromium mask | |||
: fracture limits ((-70000, -70000),(70000, 70000)) | |||
: Dark periphery | |||
: Chromium down | |||
GDS-file: GLO006_v7.gds | GDS-file: GLO006_v7.gds<br> | ||
Top cell: wafer | Top cell: wafer | ||
Layer (GDS number): 01 | Layer (GDS number): 01 <br> | ||
Mask Type: Digitised data= Dark, right reading | Mask Type: ''Digitised data= Dark, right reading''<br> | ||
Text(max 30 characters): init-2019-Nitride-etch | Text(max 30 characters): ''init-2019-Nitride-etch'' | ||
Layer (GDS number): 02 | Layer (GDS number): 02<br> | ||
Mask Type: Digitised data= Clear, Wrong reading | Mask Type: ''Digitised data= Clear, Wrong reading''<br> | ||
Text(max 30 characters): init-2019-KOH-backside | Text(max 30 characters): ''init-2019-KOH-backside'' | ||