Specific Process Knowledge/Wafer and sample drying/Critical Point Dryer: Difference between revisions

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+{{cc-nanolab}}
+'''All links to Kemibrug (SDS) and Labmanager Including APV and QC requires login.'''
 '''Feedback to this page''': '''[mailto:pvd@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Wafer_and_sample_drying/Critical_Point_Dryer&action=edit click here]'''
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 <!-- give the link to the equipment info page in LabManager: -->
-[http://labmanager.dtu.dk/function.php?module=Machine&view=view&page_id=169 Critical Point Dryer in LabManager]
+[http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=254 Critical Point Dryer in LabManager]
-In the critical point dryer, samples are dried in LCO<math>_2</math>. In the drying process, the sample is first put into Isopropanol for at least 1 hour, and loaded into the machine. When the machine is started (press "Fill"), the isopropanol is exchanged for liquid CO<math>_2</math>. When there is only CO<math>_2</math> in the machine, the pressure and temperature in the chamber is raised, above the so called “critical point”. In this way, there is never a liquid/gas interface, but instead the liquid is turned into a mixture of equal parts of gas and liquid. Because of this, the problem with surface tension, which destroys the fragile structures through capillary forces, is avoided.
+In the critical point dryer, samples are dried in supercritical CO<math>_2</math>. In the drying process, the sample is first put into Isopropanol for at least 1 hour, and then loaded into the machine. When the machine is started, the isopropanol is exchanged for liquid CO<math>_2</math>. When there is only CO<math>_2</math> in the machine, the pressure and temperature in the chamber is raised, above the so called “critical point”. At this point, there is no longer a liquid/gas interfacen, but instead the CO<math>_2</math> is in a supercritical state. Because of this, the problem with surface tension, which destroys the fragile structures through capillary forces, is avoided.
 ==Equipment performance and process related parameters==
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 !style="background:silver; color:black" align="left" valign="top" rowspan="2"|Process parameter range
 |style="background:LightGrey; color:black"|Process Temperature
-|style="background:WhiteSmoke; color:black"|0<sup>o</sup>C  to 45<sup>o</sup>C
+|style="background:WhiteSmoke; color:black"|0 <sup>o</sup>C  to 45 <sup>o</sup>C
 |-
 |style="background:LightGrey; color:black"|Process pressure
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 *Pieces (up to 10x10mm)
 |-
-| style="background:LightGrey; color:black"|Substrate material allowed
+| style="background:LightGrey; color:black"|Materials allowed
-|style="background:WhiteSmoke; color:black"|
-*Silicon wafers
-*Quartz wafers
-*Pyrex wafers
-*InAlP
-*GaAs
-|-
-| style="background:LightGrey; color:black"|Material allowed on the substrate
 |style="background:WhiteSmoke; color:black"|
-*Silicon oxide
+*Please consult the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=254 Critical Point Dryer cross contamination sheet]
-*Silicon nitride
-*Poly Silicon
-*SU-8
 |-
 |}
+<!-- copyright issue rkc
 ==Comparison of samples dried in air and with Critical Point Dryer==
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+[[Image:SiN cantilever dried CPD nr7.jpg|350x350px|left|thumb|Dried with Critical Point Dryer.]]
+'''Dried with the Critical Point Dryer'''. The cantilevers structures are free hanging after the drying.
-[[Image:SiN cantilever dried CPD nr7.jpg|350x350px|left|thumb|Dried with Critical Point Dryer.]]
-'''Dried with the Critical Point Dryer'''. The cantilevers structures are free hanging after the drying.
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+An acknowledgment goes to Tom Larsen, Nanoprobes, DTU Nanotech, who provided the pictures.
+-->
-An acknowledgment goes to Tom Larsen, Nanoprobes, DTU Nanotech, who provided the pictures.