Specific Process Knowledge/Thermal Process: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process click here]''' | '''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process click here]''' | ||
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*[[/Dope with Boron|Doping with Boron]] | *[[/Dope with Boron|Doping with Boron]] | ||
*[[/Dope with Phosphorus|Doping with Phosphorus]] | *[[/Dope with Phosphorus|Doping with Phosphorus]] | ||
*[[/Pyrolysis| | *[[/Pyrolysis|Resist pyrolysis]] | ||
== Choose an equipment to use == | == Choose an equipment to use == | ||
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'''A stack furnaces:''' | '''A stack furnaces:''' | ||
*[[/A1 Bor Drive-in furnace|Boron Drive-in + Predep furnace (A1)]] - ''For oxidation and annealing of Si wafers, and for boron pre-deposition (doping) and for drive-in afterwards'' | *[[/A1 Bor Drive-in furnace|Boron Drive-in + Predep furnace (A1)]] - ''For oxidation and annealing of Si wafers, and for boron pre-deposition (doping) and for drive-in afterwards'' | ||
*[[/A2 Gate Oxide furnace|Gate Oxide furnace (A2)]] - | *[[/A2 Gate Oxide furnace|Gate Oxide furnace (A2)]] - ''For dry oxidation of Si wafers'' | ||
*[[/A3 Phosphor Drive-in furnace|Phosphorus Drive-in furnace (A3)]] - ''For oxidation and annealing of Si wafers and for drive-in after phosphorus pre-dep'' | *[[/A3 Phosphor Drive-in furnace|Phosphorus Drive-in furnace (A3)]] - ''For oxidation and annealing of Si wafers and for drive-in after phosphorus pre-dep'' | ||
*[[/A4 Phosphor Pre-dep furnace|Phosphorus Predep furnace (A4)]] - ''For pre-deposition (doping) of phosphorus on Si wafers'' | *[[/A4 Phosphor Pre-dep furnace|Phosphorus Predep furnace (A4)]] - ''For pre-deposition (doping) of phosphorus on Si wafers'' | ||
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'''C stack furnaces:''' | '''C stack furnaces:''' | ||
*[[/C1 Furnace Anneal-oxide|Anneal-oxide furnace (C1)]] - ''For oxidation and annealing of 100 mm and 150 mm wafers'' | *[[/C1 Furnace Anneal-oxide|Anneal-oxide furnace (C1)]] - ''For oxidation and annealing of 100 mm and 150 mm wafers'' | ||
*[[/C2 Furnace | *[[/C2 Furnace General Purpose Annealing|General Purpose Annealing furnace (C2)]] - ''For annealing of different samples and materials.'' | ||
*[[/C3 Anneal-bond furnace|Anneal-bond furnace (C3)]] - ''For oxidation and annealing of bonded wafers'' | *[[/C3 Anneal-bond furnace|Anneal-bond furnace (C3)]] - ''For oxidation and annealing of bonded wafers'' | ||
*[[/C4 Aluminium Anneal furnace|Aluminium Anneal furnace (C4)]] - ''For annealing and oxidation of wafers containing e.g. aluminium, Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> '' | *[[/C4 Aluminium Anneal furnace|Aluminium Anneal furnace (C4)]] - ''For annealing and oxidation of wafers containing e.g. aluminium, Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> '' | ||
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'''Other furnaces:''' | '''Other furnaces:''' | ||
*[[/ | *[[/Resist Pyrolysis furnace |Resist Pyrolysis (former Multipurpose Anneal) furnace]] - ''For mainly resist pyrolysis'' | ||
*[[/RTP Jipelec 2|RTP2 Jipelec]] - ''For rapid thermal annealing of III-V materials, Si-based materials and some metals'' | *[[/RTP Jipelec 2|RTP2 Jipelec]] - ''For rapid thermal annealing of III-V materials, Si-based materials and some metals'' | ||
*[[/RTP Annealsys|RTP Annealsys]] - ''For rapid thermal annealing and smoothing of Si-based materials'' | *[[/RTP Annealsys|RTP Annealsys]] - ''For rapid thermal annealing, rapid thermal oxidation and smoothing of Si-based materials.'' | ||
*[[/BCB Curing Oven|BCB Curing oven]] - ''For resist curing and metal alloying''layers'' | *[[/BCB Curing Oven|BCB Curing oven]] - ''For resist curing and metal alloying''layers'' | ||
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== Decommissioned equipment == | == Decommissioned equipment == | ||
*[[/Jipelec RTP|RTP Jipelec]] - ''For rapid thermal annealing of III-V materials and Si based materials'' | *[[/Jipelec RTP|RTP Jipelec]] - ''For rapid thermal annealing of III-V materials and Si-based materials'' | ||
*[[/Furnace APOX|APOX furnace]] - ''For growing of very thick oxide layers'' | *[[/Furnace APOX|APOX furnace]] - ''For growing of very thick oxide layers'' | ||
*[[/D4 III-V Oven|III-V Oven (D4)]] - ''For oxidation of Al<sub>x</sub>GaAs layers.'' | *[[/D4 III-V Oven|III-V Oven (D4)]] - ''For oxidation of Al<sub>x</sub>GaAs layers.'' | ||
*[[/Resist Pyrolysis Furnace|Resist Pyrolysis furnace]] - ''For pyrolysis of different resist | *[[/Resist Pyrolysis Furnace|Old Resist Pyrolysis furnace]] - ''For pyrolysis of different resist | ||
*[[/Furnace Noble|Noble furnace]] - ''For annealing and oxidation of non-clean wafers'' | *[[/Furnace Noble|Noble furnace]] - ''For annealing and oxidation of non-clean wafers'' | ||