Specific Process Knowledge/Direct Structure Definition: Difference between revisions
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[[image:Define your structure directly.png|right|x200px|Define the structure directly on your sample]] | |||
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Characterization click here]''' | '''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Characterization click here]''' | ||
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By direct structure definition is meant a technique by which you create structures directly in the device material. Some of the techniques may require a master. | By direct structure definition is meant a technique by which you create structures directly in the device material. Some of the techniques may require a master. | ||
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== Choose method of structuring/equipment == | == Choose method of structuring/equipment == | ||
* [[Specific Process Knowledge/Lithography/UVLithography|UV Lithography]] | * [[Specific Process Knowledge/Lithography/UVLithography|UV Lithography]] | ||
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* [[Specific Process Knowledge/Back-end processing/Laser Micromachining Tool|Laser Micromachining Tool/ablation]] | * [[Specific Process Knowledge/Back-end processing/Laser Micromachining Tool|Laser Micromachining Tool/ablation]] | ||
* [[Specific Process Knowledge/Back-end processing/Disco Saw|Dicing saw]] | * [[Specific Process Knowledge/Back-end processing/Disco Saw|Dicing saw]] | ||
* Dry Etching without mask | |||
== Comparison of equipment/material == | == Comparison of equipment/material == | ||
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| The device is typical made in a thick film (1-10µm thick) of a polymer that is spun on a carrier (silicon wafer). A master with the desired pattern is pressed into this film and the film is hardened by heating or UV-exposure. A residual layer has to be etched away by dry etching. It is possible to form very small 2½D structures over large areas relative fast. | | The device is typical made in a thick film (1-10µm thick) of a polymer that is spun on a carrier (silicon wafer). A master with the desired pattern is pressed into this film and the film is hardened by heating or UV-exposure. A residual layer has to be etched away by dry etching. It is possible to form very small 2½D structures over large areas relative fast. | ||
| The device is typically made in Topas, PP, PE, PS or a similar polymer. A master disk, called a shim, is usually fabricated in nickel or special aluminium alloys with the desired structures to be replicated. It is mounted in the tool of the injection moulding machine. Together they form a cavity into which molten polymer is injected. It is possible to replicate both small and large 2½D structures relatively fast. Many plastic items are made by injection molding, ranging from e.g. toothbrushes to LEGO bricks. | | The device is typically made in Topas, PP, PE, PS or a similar polymer. A master disk, called a shim, is usually fabricated in nickel or special aluminium alloys with the desired structures to be replicated. It is mounted in the tool of the injection moulding machine. Together they form a cavity into which molten polymer is injected. It is possible to replicate both small and large 2½D structures relatively fast. Many plastic items are made by injection molding, ranging from e.g. toothbrushes to LEGO bricks. | ||
| | |The device is typically made using variety of different polymer foils, as well as Graphene. A master pattern, called a shim, is usually fabricated in Si, but can also be fabricated in metals as well as other polymers. It is placed inside the machine between the pressure hot plates, and using a combination of heat and pressure patterned on to the foil. It is possible to replicate both small and large 2½D structures relatively fast. | ||
| The device is made using a series of short, high intensity light pulses to engrave a pattern in almost any material. Since the light pulses are very short (100ns or 10ps) the heating of the sample can be minimized, and material can be removed without any further sample deformation/melting. | | The device is made using a series of short, high intensity light pulses to engrave a pattern in almost any material. Since the light pulses are very short (100ns or 10ps) the heating of the sample can be minimized, and material can be removed without any further sample deformation/melting. | ||
| The dicing saw is mostly used to seperate a silicon/glass wafer into individual chips. It can however also be used to make straight channels in glass/fused silica for e.g. fluidic components. | | The dicing saw is mostly used to seperate a silicon/glass wafer into individual chips. It can however also be used to make straight channels in glass/fused silica for e.g. fluidic components. | ||
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|?? | |?? | ||
|Fluidic devices, optical waveguides, surface modification. | |Fluidic devices, optical waveguides, surface modification. | ||
| | |Fluidic devices, optical waveguides, surface modification. | ||
|Cutting Silicon and glass wafers in odd shapes, shim cutting, shim patterning, surface modification, hole drilling in glass/silicon etc. | |Cutting Silicon and glass wafers in odd shapes, shim cutting, shim patterning, surface modification, hole drilling in glass/silicon etc. | ||
|Cutting Silicon and glass wafers in rectangular shapes, making straight channels in glass wafers. | |Cutting Silicon and glass wafers in rectangular shapes, making straight channels in glass wafers. | ||
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*PS (BASF 158k) | *PS (BASF 158k) | ||
*Others available upon request and approval | *Others available upon request and approval | ||
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*PMMA | |||
*TOPAS 5013-L10 | |||
*TOPAS 8007 | |||
*PC | |||
*PP | |||
*PCL | |||
*SU8 | |||
*Graphene | |||
*Metals (Al,Ni....) | |||
*For other materials contact for machine responsible personel | |||
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*Silicon | *Silicon | ||
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|Sample with polymer.<br> A stamp with the wanted pattern, usually in Si or SiO\rm{_2} however other materials could also be used. | |Sample with polymer.<br> A stamp with the wanted pattern, usually in Si or SiO\rm{_2} however other materials could also be used. | ||
|A stamp/shim with the wanted pattern, usually in Ni or Al, cut out to fit in the injection moulding machine. | |A stamp/shim with the wanted pattern, usually in Ni or Al, cut out to fit in the injection moulding machine. | ||
| | |Fabricate two blank shims (usually from aluminum foil, electroplated, nickel or milled aluminum) to protect the upper and lower press plate from polymer or other material runoff. If uniformity is an issue, the suggested procedure is to make two x PDMS foils, in order to make the force distribution as uniform as possible. The foils should be placed between the protective SHIM/CHUCK and the pressure plates. The stamp/shim with the pattern can be fabricated in variety of materials (eg. metals/polymers), using variety of different manufacturing techniques. If in doubt of which technique is right for your sample, contact for the machine responsible personel | ||
|A 2D CAD model file in DXF or CONX format. [[Specific Process Knowledge/Pattern Design| Clewin5]] can convert GDS and CIF files to DXF format. | |A 2D CAD model file in DXF or CONX format. [[Specific Process Knowledge/Pattern Design| Clewin5]] can convert GDS and CIF files to DXF format. | ||
|Number of lines and pitch in each direction. Your wafer. | |Number of lines and pitch in each direction. Your wafer. | ||
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|medium: 5-10 wafers/hour depending on imprint time | |medium: 5-10 wafers/hour depending on imprint time | ||
|Fast: Typically 10-300 samples/hour | |Fast: Typically 10-300 samples/hour | ||
| | |Medium: Typically 6-15 samples/hour | ||
|medium-slow: 0.1-1 wafers/hour depending on pattern complexity | |medium-slow: 0.1-1 wafers/hour depending on pattern complexity | ||
|medium: ½-3 wafers/hour depending on material and # of cuts (Si cuts at 5mm/s, SiO2 at 0.5-1 mm/s) | |medium: ½-3 wafers/hour depending on material and # of cuts (Si cuts at 5mm/s, SiO2 at 0.5-1 mm/s) | ||
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|100nm - µm | |100nm - µm | ||
|nm - mm | |nm - mm | ||
| | |nm - mm | ||
|100µm - wafer size | |100µm - wafer size | ||
|saw blade width 60µm or 200µm. Has to cut full diameter of wafer. | |saw blade width 60µm or 200µm. Has to cut full diameter of wafer. | ||
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|Dry Etch back (RIE), ?? Nano Imprint Lithography | |Dry Etch back (RIE), ?? Nano Imprint Lithography | ||
|Sprue/runner has to be broken or cut off. | |Sprue/runner has to be broken or cut off. | ||
| | |The pressure plates must be cooled off and cleaned | ||
|Sample cleaning with Ultrasound etc. | |Sample cleaning with Ultrasound etc. | ||
|None | |None | ||
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|2D. different depths possible | |2D. different depths possible | ||
|2D. Different depths possible. | |2D. Different depths possible. | ||
| | |2D. Different depths possible. | ||
|2D. different depths possible | |2D. different depths possible | ||
|1D. different depths possible | |1D. different depths possible | ||
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*Microscope slide tool: 26x76 mm2 | *Microscope slide tool: 26x76 mm2 | ||
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* | *<nowiki>#</nowiki> small samples | ||
*<nowiki>#</nowiki> 50 mm wafers | |||
*<nowiki>#</nowiki> 100 mm wafers | |||
*<nowiki>#</nowiki> 150 mm wafers | |||
*<nowiki>#</nowiki> 200 mm wafers | |||
*<nowiki>#</nowiki> odd sized samples, contact for the machine responsible personel | |||
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*small samples | *small samples | ||
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|Nano Imprint Lithography | |Nano Imprint Lithography | ||
|Nickel, aluminium, steel, FDTS | |Nickel, aluminium, steel, FDTS | ||
| | |Most polymers and metals as well as Graphene, if you need a material approved please write to Nanolab | ||
|Almost any | |Almost any | ||
|Silicon, glass, GaN, bonded wafers, LiNbO3 | |Silicon, glass, GaN, bonded wafers, LiNbO3 | ||