Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By BGHE: Difference between revisions
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I tried with two different gas regimes: CF4 and C4F8. I only made a few tests with CF4 since I got a very bad selectivity to the resist mask and I dicided to go for the C4F8 instead.<br> | {{CC-bghe1}} <br> | ||
Zhibo Li | <!-- checked by bghe 2021-08-18--> | ||
I (bghe@nanolab 2016) tried with two different gas regimes: CF4 and C4F8. I only made a few tests with CF4 since I got a very bad selectivity to the resist mask and I dicided to go for the C4F8 instead.<br> | |||
Zhibo Li, DTU Nanolab (former DTU Danchip), has also tried (December 2016) with similar setting, see his results in this file: [[:File:Zhibo Li SiO2 ICP etch (dose205).docx]] | |||
==C4F8 | ==C4F8== | ||
{{CC-bghe2}} <br> | |||
I started out with a recipe developed by Peixiong called pxSiO2try9, look at his results [[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By Peixiong| here]] | I started out with a recipe developed by Peixiong called pxSiO2try9, look at his results [[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By Peixiong| here]] | ||
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|<!--'''T'''--> 0 | |<!--'''T'''--> 0 | ||
|<!--'''Process time'''--> 8 min | |<!--'''Process time'''--> 8 min | ||
|width="200"|<!--'''Comment'''--> One of the good ones. the mask is well preserved, CF barc etch | |width="200"|<!--'''Comment'''--> One of the good ones. the mask is well preserved, CF barc etch. The small pitch line are etched much slower that the higher pitch lines | ||
|width="200"|<!--'''Results'''--> | |width="200"|<!--'''Results'''--> | ||
[[File: ICP metal s007593_25.jpg|100px|frameless]] [[File:ICP metal s007593_28.jpg|100px|frameless]] | [[File: ICP metal s007593_25.jpg|100px|frameless]] [[File:ICP metal s007593_28.jpg|100px|frameless]] | ||