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I tried with two different gas regimes: CF4 and C4F8. I only made a few tests with CF4 since I got a very bad selectivity to the resist mask and I dicided to go for the C4F8 instead.<br>
{{CC-bghe1}} <br>
Zhibo Li @ Danchip has also tried (December 2016) with similar setting, see his results in this file: [[:File:Zhibo Li SiO2 ICP etch (dose205).docx]]
<!-- checked by bghe 2021-08-18-->
I (bghe@nanolab 2016) tried with two different gas regimes: CF4 and C4F8. I only made a few tests with CF4 since I got a very bad selectivity to the resist mask and I dicided to go for the C4F8 instead.<br>
Zhibo Li, DTU Nanolab (former DTU Danchip), has also tried (December 2016) with similar setting, see his results in this file: [[:File:Zhibo Li SiO2 ICP etch (dose205).docx]]


==C4F8 [[image:Under_construction.png|50px]]==
==C4F8==
{{CC-bghe2}} <br>
I started out with a recipe developed by Peixiong called pxSiO2try9, look at his results [[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By Peixiong| here]]
I started out with a recipe developed by Peixiong called pxSiO2try9, look at his results [[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By Peixiong| here]]


Line 58: Line 61:
|<!--'''Selectivity (resist:SiO2)'''-->
|<!--'''Selectivity (resist:SiO2)'''-->
~1:2 (Si3N4)
~1:2 (Si3N4)
|<!--'''Etch rate in Si'''-->
?
|-
|-style="background:white; color:black"
|s007785
|<!-- '''Mask material''' --> 880nm KRF
|<!-- '''Barc etch''' -->pxbarcO2 25s
|<!-- '''Coil power''' --> 800W
|<!--'''Platen power'''--> 200W
|<!--'''Pressure'''--> 2.5mTorr
|<!--'''Flow rate C4F8'''--> 13sccm
|<!--'''Flow rate H2'''--> 26sccm
|<!--'''Flow rate Ar'''-->0
|<!--'''T'''--> 0
|<!--'''Process time'''--> 7 min
|width="200"|<!--'''Comment'''--> One of the good ones. the mask is well preserved
|width="200"|<!--'''Results'''-->
[[File:s007785_05.jpg|100px|frameless]] [[File:s007785_08.jpg|100px|frameless]]
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br>
trench opening as a fraction of pitch-->
37% (1µm pitch)<br>
48% (4µm pitch)<br>
|<!--'''Profile angles'''-->
83-86
|<!--'''Etch depth in SiO2'''-->
>1000 nm
|<!--'''Etch rate'''-->
>143nm/mi
|<!--'''Etch depth in resist'''-->
250nm
|<!--'''Selectivity (resist:SiO2)'''-->
>1:4
|<!--'''Etch rate in Si'''-->
?
|-
|-
|-style="background:white; color:black"
|s007679
|<!-- '''Mask material''' --> 880nm KRF
|<!-- '''Barc etch''' -->barc etch CF 40s
|<!-- '''Coil power''' --> 800W
|<!--'''Platen power'''--> 200W
|<!--'''Pressure'''--> 2.5mTorr
|<!--'''Flow rate C4F8'''--> 13sccm
|<!--'''Flow rate H2'''--> 26sccm
|<!--'''Flow rate Ar'''-->0
|<!--'''T'''--> 0
|<!--'''Process time'''--> 8 min
|width="200"|<!--'''Comment'''--> One of the good ones. the mask is well preserved, CF barc etch
|width="200"|<!--'''Results'''-->
[[File: ICP metal s007679_01.jpg|100px|frameless]] [[File:ICP metal s007679_04.jpg|100px|frameless]]
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br>
trench opening as a fraction of pitch-->
42% (1µm pitch)<br>
48% (4µm pitch)<br>
|<!--'''Profile angles'''-->
83-89
|<!--'''Etch depth in SiO2'''-->
>1074 nm
|<!--'''Etch rate'''-->
>134nm/min
|<!--'''Etch depth in resist'''-->
310nm
|<!--'''Selectivity (resist:SiO2)'''-->
>1:3.5
|<!--'''Etch rate in Si'''-->
?
|-
|-
|-style="background:white; color:black"
|s007592
|<!-- '''Mask material''' --> 880nm KRF
|<!-- '''Barc etch''' -->barc etch CF 40s
|<!-- '''Coil power''' --> 1000W
|<!--'''Platen power'''--> 200W
|<!--'''Pressure'''--> 2.5mTorr
|<!--'''Flow rate C4F8'''--> 10sccm
|<!--'''Flow rate H2'''--> 28sccm
|<!--'''Flow rate Ar'''-->0
|<!--'''T'''--> 0
|<!--'''Process time'''--> 5 min
|width="200"|<!--'''Comment'''--> One of the good ones. the mask is well preserved, CF barc etch
|width="200"|<!--'''Results'''-->
[[File: ICP metal s007592_21.jpg|100px|frameless]] [[File:ICP metal s007592_24.jpg|100px|frameless]]
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br>
trench opening as a fraction of pitch-->
41% (1µm pitch)<br>
47% (4µm pitch)<br>
|<!--'''Profile angles'''-->
86-87
|<!--'''Etch depth in SiO2'''-->
727 nm (1µm) <br>
864 nm (4µm)
|<!--'''Etch rate'''-->
145 nm/min (1µm pitch) <br>
172 nm/min (4µm pitch
|<!--'''Etch depth in resist'''-->
170nm
|<!--'''Selectivity (resist:SiO2)'''-->
1:4.3 (1µm P)<br>
1:5.1 [4µm P)
|<!--'''Etch rate in Si'''-->
?
|-
|-
|-style="background:white; color:black"
|s007593
|<!-- '''Mask material''' --> 880nm KRF
|<!-- '''Barc etch''' -->barc etch CF 40s
|<!-- '''Coil power''' --> 800W
|<!--'''Platen power'''--> 100W
|<!--'''Pressure'''--> 2.5mTorr
|<!--'''Flow rate C4F8'''--> 10sccm
|<!--'''Flow rate H2'''--> 28sccm
|<!--'''Flow rate Ar'''-->0
|<!--'''T'''--> 0
|<!--'''Process time'''--> 8 min
|width="200"|<!--'''Comment'''--> One of the good ones. the mask is well preserved, CF barc etch. The small pitch line are etched much slower that the higher pitch lines
|width="200"|<!--'''Results'''-->
[[File: ICP metal s007593_25.jpg|100px|frameless]] [[File:ICP metal s007593_28.jpg|100px|frameless]]
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br>
trench opening as a fraction of pitch-->
32% (1µm pitch)<br>
45% (4µm pitch)<br>
|<!--'''Profile angles'''-->
85-86
|<!--'''Etch depth in SiO2'''-->
501 nm (1µm) <br>
881 nm (4µm)
|<!--'''Etch rate'''-->
63 nm/min (1µm pitch) <br>
110 nm/min (4µm pitch
|<!--'''Etch depth in resist'''-->
100nm
|<!--'''Selectivity (resist:SiO2)'''-->
1:5.0 (1µm P)<br>
1:8.8 [4µm P)
|<!--'''Etch rate in Si'''-->  
|<!--'''Etch rate in Si'''-->  
?
?
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