Specific Process Knowledge/Thin Film deposition/ALD/TiO2 deposition using ALD: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_Film_deposition/ALD/TiO2_deposition_using_ALD click here]''' | |||
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The ALD window for titanium dioxide (TiO<sub>2</sub>) ranges from 120 <sup>o</sup>C to 350 <sup>o</sup>C. | The ALD window for titanium dioxide (TiO<sub>2</sub>) ranges from 120 <sup>o</sup>C to 350 <sup>o</sup>C. | ||
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For Si wafers, amorphous TiO<sub>2</sub> is best grown on wafers with native oxide, and anatase TiO<sub>2</sub> is best grown on wafers without native oxide (removed using HF). | For Si wafers, amorphous TiO<sub>2</sub> is best grown on wafers with native oxide, and anatase TiO<sub>2</sub> is best grown on wafers without native oxide (removed using HF). | ||
====TiO<sub>2</sub> standard recipe==== | ====TiO<sub>2</sub> standard recipe==== | ||
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====TiO<sub>2</sub> deposition rates==== | ====TiO<sub>2</sub> deposition rates==== | ||
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</gallery> | </gallery> | ||
Evgeniy Shkondin, DTU Danchip, April-May 2014. | Evgeniy Shkondin, DTU Nanolab (former DTU Danchip), April-May 2014. | ||
====TiO<sub>2</sub> results==== | ====TiO<sub>2</sub> results==== | ||
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Evgeniy Shkondin, DTU Danchip, 2014. | Evgeniy Shkondin, DTU Nanolab (former DTU Danchip), 2014. | ||
====TiO<sub>2</sub> deposition on trenches==== | ====TiO<sub>2</sub> deposition on trenches==== | ||