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=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=
{{cc-nanolab}}


'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_Film_deposition/ALD/TiO2_deposition_using_ALD click here]'''
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The ALD window for titanium dioxide (TiO<sub>2</sub>) ranges from 120 <sup>o</sup>C to 350 <sup>o</sup>C.


'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_Film_deposition/ALD/TiO2_deposition_using_ALD click here]'''
A low temperatures between 120 <sup>o</sup>C and 150 <sup>o</sup>C an amorphous TiO<sub>2</sub> layer is grown in the ALD, and at higher temperatures between 300 <sup>o</sup>C and 350 <sup>o</sup>C an anatase TiO<sub>2</sub> layer is grown. At temperatures between 150 <sup>o</sup>C and 300 <sup>o</sup>C the TiO<sub>2</sub> layer will be a mixture of both amorphous and anatase TiO<sub>2</sub>.


For Si wafers, amorphous TiO<sub>2</sub> is best grown on wafers with native oxide, and anatase TiO<sub>2</sub> is best grown on wafers without native oxide (removed using HF).


The ALD window for depostion of Titanium oxide ranges from 120 <sup>o</sup>C to 350 <sup>o</sup>C. XPS measurements shows that at temperatures below 120 <sup>o</sup>C the TiO<sub>3</sub> layer will be contaminated by Cl molecules.


All results shown on this page have been obtained using the "TiO2" recipe on new Si(100) wafers with native oxide:


====TiO<sub>2</sub> standard recipe====


<b>Recipe</b>: TiO2
<b>Recipe</b>: TiO2


<b>Temperature</b>: 150 <sup>o</sup>C - 350 <sup>o</sup>C
<b>Temperature</b>: 120 <sup>o</sup>C - 350 <sup>o</sup>C


{| border="2" cellspacing="2" cellpadding="5"  align="none"
{| border="2" cellspacing="2" cellpadding="5"  align="none"
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!TMA
!TiCl<sub>4</sub>
!H<sub>2</sub>O
!H<sub>2</sub>O
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!Purge time
!Purge time
|3.0 s
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|5.0 s
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====TiO<sub>2</sub> deposition rates====


In the graphs below the TiO<sub>2</sub> thickness as function of the number of cycles for deposition temperatures between 150 <sup>o</sup>C and 350 <sup>o</sup>C can be seen. From the equations the number of cycles required for a certain thickess to be deposited can be calculated. All results have been obtained for Si wafers with native oxide. 


 
<gallery caption="Titanium dioxide thickness as function of number of cycles" widths="300px" heights="300px" perrow="3">
In the graphs below the Al<sub>2</sub>O<sub>3</sub> thickness as function of number of cycles for deposition temperatures between 150 <sup>o</sup>C and 350 <sup>o</sup>C can be seen. From the equations the number of cycles required for a certain thickess can be calculated.
 
<gallery caption="Aluminium oxide thickness as function of number of cycles" widths="220px" heights="220px" perrow="5">
image:ALD_TiO2_grow_rate_150C.jpg| Temperature 150 <sup>o</sup>C.
image:ALD_TiO2_grow_rate_150C.jpg| Temperature 150 <sup>o</sup>C.
image:ALD Al2O3 grow rate 200C.jpg| Temperature 200 <sup>o</sup>C.
image:ALD_TiO2_grow_rate_250C.jpg| Temperature 250 <sup>o</sup>C.
image:ALD Al2O3 grow rate 250C.jpg| Temperature 250 <sup>o</sup>C.
image:ALD_TiO2_grow_rate_350C.jpg| Temperature 350 <sup>o</sup>C.
image:ALD Al2O3 grow rate 200C.jpg| Temperature 300 <sup>o</sup>C.
image:ALD Al2O3 grow rate 350C.jpg| Temperature 350 <sup>o</sup>C.
</gallery>
</gallery>


Evgeniy Shkondin, DTU Nanolab (former DTU Danchip), April-May 2014.




====TiO<sub>2</sub> results====


Some some SEM images of TiO<sub>2</sub> deposited on a Si surface at different temperatures between 150 <sup>o</sup>C and 350 <sup>o</sup>C are shown below. Some of samples have been treated with HF (hydrofluoric acid) to remove the native oxide layer just before the ALD deposition.


<gallery caption="Titanium dioxide deposited at different temperatures on a Si surface" widths="250px" heights="180px" perrow="3">
image:TiO2 150C 1200 cycles Si_HF_treated.jpg| Temperature 150 <sup>o</sup>C, 1200 cycles, HF treated.
image:TiO2 150C 1200 cycles Si_untreated.jpg| Temperature 150 <sup>o</sup>C, 1200 cycles.
image:TiO2 250C 750cycles_Si_untreated.jpg| Temperature 250 <sup>o</sup>C, 750 cycles.
</gallery>
<gallery caption="" widths="250px" heights="180px" perrow="5">
image:TiO2 1000 cycles 300C Si_HF.jpg| Temperature 300 <sup>o</sup>C, 1000 cycles, HF treated.
image:TiO2 1000 cycles 300C Si_un.jpg| Temperature 300 <sup>o</sup>C, 1000 cycles.
image:TiO2 350C 1250 cycles Si_HF_treated.jpg| Temperature 350 <sup>o</sup>C, 1250 cycles, HF treated.
</gallery>


XPS measurements of TiO<sub>2</sub> deposited at 120 <sup>o</sup>C and 300 <sup>o</sup>C are shown below. From the XPS measurements it can be calculated that at temperatures below 120 <sup>o</sup>C the TiO<sub>2</sub> layer will be contaminated with about 1-3 % chlorine molecules from the TiCl<sub>4</sub> precursor. This can be also seen as small white dots in the SEM image of the amorphous TiO<sub>2</sub> layers above.


[[image:XPS_TiO2.jpg|320x320px|left|thumb|XPS measurements of titanium dioxide.]]


<br clear="all" />


Evgeniy Shkondin, DTU Nanolab (former DTU Danchip), 2014.


In the graphs below the TiO<sub>2</sub> thickness as function of number of cycles for deposition temperatures between 150 <sup>o</sup>C and 350 <sup>o</sup>C can be seen. From the equations the number of cycles required for a certain thickess can be calculated.


<gallery caption="Titanium oxide thickness as function of number of cycles" widths="220px" heights="220px" perrow="5">
====TiO<sub>2</sub> deposition on trenches====
image:ALD TiO2 grow rate 150C.tif| Temperature 150 <sup>o</sup>C.
 
image:ALD TiO2 grow rate 250C.tif| Temperature 200 <sup>o</sup>C.
For TiO<sub>2</sub> deposition on trenches more information can be found here:
image:ALD TiO2 grow rate 350C.tif| Temperature 250 <sup>o</sup>C.
 
</gallery>
*[[Specific Process Knowledge/Thin Film deposition/ALD/TiO2 deposition using ALD/TiO2 deposition on trenches using ALD|TiO<sub>2</sub> deposition on trenches using ALD]]
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