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=Nanofabrication of Inductive Components for Integrated Power Supply On Chip =
=Nanofabrication of Inductive Components for Integrated Power Supply On Chip =
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*'''Project responsible:''' Hoà Lê Thanh
*'''Project responsible:''' Hoà Lê Thanh
*'''Supervisors:''' Flemming Jensen (Main), Anpan Han (Co), Ziwei Ouyang (Co), Arnold Knott (CO)
*'''Supervisors:''' Flemming Jensen (Main), Anpan Han (Co), Ziwei Ouyang (Co), Arnold Knott (CO)
*'''Partners involved:''' DTU Danchip, DTU Elektro
*'''Partners involved:''' DTU Nanolab (former DTU Danchip), DTU Elektro




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'''Full thesis''': [[:File:1. A4size_HoaThanhLe_Thesis_14.12.2017.pdf]]
'''Full thesis''': [[:File:1. A4size_HoaThanhLe_Thesis_14.12.2017.pdf]]


=Dissemination=
=Publications=


[1] Hoa Thanh Le, Io Mizushima, Peter Torben Tang, Ziwei Ouyang, Flemming Jensen, and Anpan Han. “Fabrication of 3D Air-core MEMS Inductors for High Frequency Power Electronic Applications”. Microsystems & Nanoengineering, vol. 4, no. 17082, 2018. ([https://www.nature.com/articles/micronano201782.pdf])
[1] Hoa Thanh Le, Io Mizushima, Peter Torben Tang, Ziwei Ouyang, Flemming Jensen, and Anpan Han. “Fabrication of 3D Air-core MEMS Inductors for High Frequency Power Electronic Applications”. Microsystems & Nanoengineering, vol. 4, no. 17082, 2018. ([https://www.nature.com/articles/micronano201782.pdf])
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'''Fabricated Microinductors''': SEM micrographs of MEMS air-core inductors, (a) toroidal inductors with 16 mm2 (1.5 mm outer radius, 0.75 mm inner radius, 25 turns) and 4 mm2 footprint (inset) Presented by the lines and arrows, the current fows from the top wire bonding pad, through the TSV interconnects, then passing through the windings and exits at the lower pad. The measurement pads are designed in ground-signal-ground (GSG)
'''Fabricated Microinductors''':  
configuration at both terminals for wafer-level probing. Four 800 µm by 800 µm pads at the corners are for flip-chip bonding. (b) 1:1 toroidal transformer. The primary coil has larger conductors than that of the secondary coil. (c) solenoid inductor, (d) spiral inductor, (e) "DTU" inductor.


[[File:Inductor_Results_1.jpg|500px]]
[[File:Inductor_Results_1.jpg|500px]]


SEM micrographs of MEMS air-core inductors, (a) toroidal inductors with 16 mm2
SEM micrographs of MEMS air-core inductors, (a) toroidal inductors with 16 mm2 (1.5 mm outer radius, 0.75 mm inner radius, 25 turns) and 4 mm2 footprint (inset) Presented by the lines and arrows, the current fows from the top wire bonding pad, through the TSV interconnects, then passing through the windings and exits at the lower pad. The measurement pads are designed in ground-signal-ground (GSG)
(1.5 mm outer radius, 0.75 mm inner radius, 25 turns) and 4 mm2 footprint (inset) Presented
configuration at both terminals for wafer-level probing. Four 800 µm by 800 µm pads at the corners are for flip-chip bonding. (b) 1:1 toroidal transformer. The primary coil has larger conductors than that of the secondary coil. (c) solenoid inductor, (d) spiral inductor, (e) "DTU" inductor.
by the lines and arrows, the current  
ows from the top wire bonding pad, through the TSV
interconnects, then passing through the windings and exits at the lower pad. The measurement
pads are designed in ground-signal-ground (GSG) configuration at both terminals for wafer-level
probing. Four 800 µm by 800 µm pads at the corners are for  
flip-chip bonding. (b) 1:1 toroidal
transformer. The primary coil has larger conductors than that of the secondary coil. (c) solenoid
inductor, (d) spiral inductor, (e) \DTU" inductor.


=Technology Development=
=Process Development=


[[/Air-core Inductor|Air-core Inductor]]
[[/Air-core Inductor|Air-core Inductor]]
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[[/3D Passive Interposer|3D Passive Interposer]]
[[/3D Passive Interposer|3D Passive Interposer]]
==Publications==