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==Test of the deposition rate and film characteristics==
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBSD_of_Si click here]'''
 
==Test of the deposition rate of Silicon and film characteristics==
'''''The work in this section was done by Kristian Hagsted Rasmussen @DTU Nanolab (former DTU Danchip) before 2012 - '''''
 
'''''with followup by Berit Herstrøm (bghe) @DTU Nanolab.'''''
 
Please note that it is from 2022 no longer possible to deposit Si with the Ion beam etcher here at Nanolab.
 
{| border="2" cellspacing="1" cellpadding="3" align="left"
! 
!Recipe 2 - with the small grids)
|-
|Platen angle
|10 degrees
|-
|Platen rotation speed
|20rpm
|-
|Ar(N) flow
|4 sccm
|-
|Ar(dep. source) flow
|8 sccm
|-
|I(N)
|240mA
|-
|Power setting
|700W
|-
|I(B)
|200mA
|-
|V(B)
|1100V
|-
|Vacc(B)
|400V
|-
|}
 
<br clear="all" />
 
===Results with recipe 2 and the small grids===
 
{| border="2" cellspacing="1" cellpadding="3" align="left"
!Depostion time
!10 min (2016-08-04 bghe)
 
|-
|Characterization method
|Ellipsometer 3 angles
|-
|Deposition thickness
|50 nm (2016-08-04 bghe)
 
|-
|Deposition rate
|5.0 nm/min
|-
|Refractive index @632nm
|
n=? <br/>
k=?
|-
|Refractive index @1000nm <br/>
@950nm using the ellipsometer
|
n=? <br/>
k=?
|-
|Refractive index @1550nm <br/>
|
n=? <br/>
k=?
|-
|}
 
<br clear="all" />
 


===Recipe===
===Recipe===


{| border="2" cellspacing="1" cellpadding="3" align="left"
{| border="2" cellspacing="1" cellpadding="3" align="left"
!
!&nbsp;
!Recipe 1
!Recipe 1 - with the large grids)
|-
|-
|Platen angle
|Platen angle
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===Results===
===Results with recipe 1 and the large grids===


{| border="2" cellspacing="1" cellpadding="3" align="left"
{| border="2" cellspacing="1" cellpadding="3" align="left"
!Depostion time
!Depostion time
!10 min
!10 min (before 2013)
!30 min
!30 min (before 2013)
!30 min
!30 min (before 2013)
!30 min (2013-10-4)
|-
|-
|Characterization methode
|Characterization method
|FilmTek
|FilmTek
|FilmTek
|FilmTek
|Ellipsometer 3 angles
|Ellipsometer 3 angles
|Ellipsometer 3 angles
|-
|-
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|229 nm
|229 nm
|242 nm
|242 nm
|194 nm (2013-10-4)
|-
|-
|Deposition rate
|Deposition rate
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|7.6 nm/min
|7.6 nm/min
|8.1 nm/min
|8.1 nm/min
|6.5 nm/min
|-
|-
|Refractive index @632nm
|Refractive index @632nm
Line 71: Line 155:
n=4.589 <br/>
n=4.589 <br/>
k=0.479
k=0.479
|
n=4.625 <br/>
k=0.653
|-
|-
|Refractive index @1000nm <br/>
|Refractive index @1000nm <br/>
Line 83: Line 170:
n=4.136 <br/>
n=4.136 <br/>
k=0.189
k=0.189
|
n=4.206 <br/>
k=0.183
|-
|Refractive index @1550nm <br/>
|
n=? <br/>
k=?
|
n=? <br/>
k=?
|
n=? <br/>
k=?
|
n=3.970 <br/>
k=0.062
|-
|-
|Roughness
|Roughness
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|10.4 nm
|10.4 nm
|1.1 nm
|1.1 nm
|0.9 nm
|-
|-
|}
|}


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