Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBSD of Si: Difference between revisions
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==Test of the deposition rate of Silicon and film characteristics== | ==Test of the deposition rate of Silicon and film characteristics== | ||
'''''The work in this section was done by Kristian Hagsted Rasmussen @DTU Danchip before 2012 | '''''The work in this section was done by Kristian Hagsted Rasmussen @DTU Nanolab (former DTU Danchip) before 2012 - ''''' | ||
with followup by Berit Herstrøm (bghe) @DTU Nanolab.''''' | '''''with followup by Berit Herstrøm (bghe) @DTU Nanolab.''''' | ||
Please note that it is no longer possible to deposit Si with the Ion beam etcher here at Nanolab. | Please note that it is from 2022 no longer possible to deposit Si with the Ion beam etcher here at Nanolab. | ||
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