Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBSD of Si: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@ | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBSD_of_Si click here]''' | ||
==Test of the deposition rate of Silicon and film characteristics== | ==Test of the deposition rate of Silicon and film characteristics== | ||
'''''The work in this section was done by Kristian Hagsted Rasmussen @DTU Nanolab (former DTU Danchip) before 2012 - ''''' | |||
'''''with followup by Berit Herstrøm (bghe) @DTU Nanolab.''''' | |||
Please note that it is from 2022 no longer possible to deposit Si with the Ion beam etcher here at Nanolab. | |||
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===Results with recipe 2 and the | ===Results with recipe 2 and the small grids=== | ||
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{| border="2" cellspacing="1" cellpadding="3" align="left" | {| border="2" cellspacing="1" cellpadding="3" align="left" | ||
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!Recipe 1 - with the | !Recipe 1 - with the large grids) | ||
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|Platen angle | |Platen angle | ||
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===Results with recipe 1 and the | ===Results with recipe 1 and the large grids=== | ||
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