Specific Process Knowledge/Lithography/EBeamLithography/EBLProcessExamples: Difference between revisions
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=Mix-and-match with EBL and UV lithography= | =Mix-and-match with EBL and UV lithography= | ||
Using mix-and-match it is possible to combine EBL and UV lithography using selected resists. Read more on the [[Specific_Process_Knowledge/Lithography/Mix-and-match|Mix-and-match page.]] | Using mix-and-match it is possible to combine EBL and UV lithography using selected resists. Read more on the [[Specific_Process_Knowledge/Lithography/Mix-and-match|Mix-and-match page.]] | ||
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By default the subfield size is 4x4 µm. This will match for instance a beam pitch of 200 nm, since it will place 20 beam shots along each axis. It does not match a beam pitch of 190 nm for instance, since 4000 nm / 190 nm = 21.05. If one wants a beam pitch of 190 nm the subfield size should be changed to 3.990 x 3.990 µm. This is done in the JDF file by changing the '''SPPRM''' command from the usual '''SPPRM 4.0,,,,1.0,1''' to '''SPPRM 3.99,,,,1.0,1''', since the first number determines subfield size. | By default the subfield size is 4x4 µm. This will match for instance a beam pitch of 200 nm, since it will place 20 beam shots along each axis. It does not match a beam pitch of 190 nm for instance, since 4000 nm / 190 nm = 21.05. If one wants a beam pitch of 190 nm the subfield size should be changed to 3.990 x 3.990 µm. This is done in the JDF file by changing the '''SPPRM''' command from the usual '''SPPRM 4.0,,,,1.0,1''' to '''SPPRM 3.99,,,,1.0,1''', since the first number determines subfield size. | ||
A significant limitation of this approach is that the beam pitch as determined by the SHOT S command has a maximum value of 1020 units, i.e. 251 nm. The method described below does not have this limitation. | |||
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