Specific Process Knowledge/Lithography/Pretreatment: Difference between revisions
| (2 intermediate revisions by one other user not shown) | |||
| Line 100: | Line 100: | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
!Restrictions | !Restrictions | ||
| | |Low Tg polymer substrates, type IV films, and resist/polymer on substrate | ||
i.e. no resist coated wafers or | i.e. no resist coated wafers or Crystalbonded chips! | ||
|Wafers with metal is not allowed | |Wafers with metal is not allowed | ||
|Resist is not allowed | |Resist is not allowed | ||
| Line 394: | Line 394: | ||
==Spin Coater: Gamma e-beam & UV== | ==Spin Coater: Gamma e-beam & UV== | ||
[[image:Gamma_4M_-_E-beam_&_UV_full.JPG| | [[image:Gamma_4M_-_E-beam_&_UV_full.JPG|400px|thumb|Spin Coater: Gamma e-beam & UV in E-5.]] | ||
The user manual, user APV, and contact information can be found in LabManager: | The user manual, user APV, and contact information can be found in LabManager: | ||
| Line 408: | Line 408: | ||
=Buffered HF-Clean= | =Buffered HF-Clean= | ||
[[image:BHF clean.JPG| | [[image:BHF clean.JPG|400px|thumb||BHF clean wetbench 04 in D-3.]] | ||
Another commonly used method to render the surface of silicon wafers hydrophobic is the dilute HF dip. | Another commonly used method to render the surface of silicon wafers hydrophobic is the dilute HF dip. | ||