Specific Process Knowledge/Lithography/Pretreatment: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Pretreatment click here]''' | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Pretreatment click here]''' | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
!Restrictions | !Restrictions | ||
| | |Low Tg polymer substrates, type IV films, and resist/polymer on substrate | ||
i.e. no resist coated wafers or | i.e. no resist coated wafers or Crystalbonded chips! | ||
|Wafers with metal is not allowed | |Wafers with metal is not allowed | ||
|Resist is not allowed | |Resist is not allowed | ||
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=HMDS= | =HMDS= | ||
The chemical treatment with hexamethyldisilazane (HMDS) before the spin coating can be used to promote the adhesion for photoresist. Vapor priming with HMDS leaves a mono-layer of TMS (trimethylsilyl) on the Si or SiO<sub>2</sub> surface. The process dehydrates the substrate surface, and lowers the surface | The chemical treatment with hexamethyldisilazane (HMDS) before the spin coating can be used to promote the adhesion for photoresist. Vapor priming with HMDS leaves a mono-layer of TMS (trimethylsilyl) on the Si or SiO<sub>2</sub> surface. The process dehydrates the substrate surface, and lowers the surface energy to promote better wetting. | ||
The molecular formula for hexamethyldisilazane, or bis(trimethylsilyl)amine, is C<sub>6</sub>H<sub>19</sub>NSi<sub>2</sub>. | The molecular formula for hexamethyldisilazane, or bis(trimethylsilyl)amine, is C<sub>6</sub>H<sub>19</sub>NSi<sub>2</sub>. | ||
[[File:HMDS priming schematic.png| | [[File:HMDS priming schematic.png|400px|thumb|right|Schematic of the HMDS vapor priming process]] | ||
<br clear="all" /> | <br clear="all" /> | ||
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==Oven: HMDS 2== | ==Oven: HMDS 2== | ||
[[Image:HMDS2.jpg| | [[Image:HMDS2.jpg|400px|thumb|The Oven: HMDS 2 oven is located in E-5.]] | ||
The user manual, user APV, and contact information can be found in LabManager: | The user manual, user APV, and contact information can be found in LabManager: | ||
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==Spin Coater: Gamma UV== | ==Spin Coater: Gamma UV== | ||
[[Image:HMDS gammaUV.jpg| | [[Image:HMDS gammaUV.jpg|400px|thumb|HMDS module (top) in Spin Coater: Gamma UV in E-5.]] | ||
The user manual, user APV, and contact information can be found in LabManager: | The user manual, user APV, and contact information can be found in LabManager: | ||
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==Spin Coater: Gamma e-beam & UV== | ==Spin Coater: Gamma e-beam & UV== | ||
[[image:Gamma_4M_-_E-beam_&_UV_full.JPG| | [[image:Gamma_4M_-_E-beam_&_UV_full.JPG|400px|thumb|Spin Coater: Gamma e-beam & UV in E-5.]] | ||
The user manual, user APV, and contact information can be found in LabManager: | The user manual, user APV, and contact information can be found in LabManager: | ||
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=Buffered HF-Clean= | =Buffered HF-Clean= | ||
[[image:BHF clean.JPG| | [[image:BHF clean.JPG|400px|thumb||BHF clean wetbench 04 in D-3.]] | ||
Another commonly used method to render the surface of silicon wafers hydrophobic is the dilute HF dip. | Another commonly used method to render the surface of silicon wafers hydrophobic is the dilute HF dip. | ||