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Specific Process Knowledge/Lithography/Resist/UVresist: Difference between revisions

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Taran (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891
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Line 84: Line 84:
Manual coaters:<br>
Manual coaters:<br>
*Spin coater: RCD8
*Spin coater: RCD8
or
*Spin coater: Labspin 2
*Spin coater: Labspin 3
|
|
Spray coater
Spray coater
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Exposure tool
!Exposure tool
|align="center" colspan="5"|Mask aligner or Maskless aligner
|align="center" colspan="6"|Mask aligner or Maskless aligner
|-
|-


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*AZ 351B
*AZ 351B
*AZ 726 MIF
*AZ 726 MIF
|AZ 726 MIF
|
*AZ 726 MIF
*[[Specific_Process_Knowledge/Lithography/nLOF#Development|Solvent development]] possible
|AZ 726 MIF
|AZ 726 MIF
|mr-DEV 600 (PGMEA)
|mr-DEV 600 (PGMEA)
Line 169: Line 174:
*High aspect ratio
*High aspect ratio
*Resist thickness 1 µm to several 100 µm
*Resist thickness 1 µm to several 100 µm
*Available in cleanroom: 2005, 2035, and 2075. Considering discontinuation of the SU-8 2000 series we need to move to another product SU8 3000 and SU8 XTF series.
*New formulation will be available in cleanroom and tested: 3005 instead of 2005, 3035 instead of 2035, XTF75 instead of 2075 and new 3025.
|
|
Spray coater specific resist
Spray coater specific resist
Line 229: Line 236:


==Exposure dose==
==Exposure dose==
[[Image:AZ photoresists spectral sensitivity - remake v1.png|400x400px|thumb|Spectral sensitivity of AZ resists represented as optical absorption coefficient.]]
[[Image:resistSensitivity_UV.png|400px|thumb|Spectral sensitivity of AZ resists represented as optical absorption coefficient.]]


During exposure of the resist, the photoinitiator, or photo-active component, reacts with the exposure light, and starts the reaction which makes the resist develop in the developer.
During exposure of the resist, the photoinitiator, or photo-active component, reacts with the exposure light, and starts the reaction which makes the resist develop in the developer.
Line 269: Line 276:




===KS Aligner===
===Aligner: MA6-1===
The KS Aligner has an i-line notch filter installed. This results in an exposure light peak around 365 nm with a FWHM of 7 nm.
The Aligner: MA6-1 has an i-line notch filter installed. This results in an exposure light peak around 365 nm with a FWHM of 7 nm.


{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  
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===Aligner: MA6 - 2===
===Aligner: MA6-2===
The Aligner: MA6-2 has an i-line notch filter installed. This results in an exposure light peak around 365 nm with a FWHM of 7 nm.
The Aligner: MA6-2 has an i-line notch filter installed. This results in an exposure light peak around 365 nm with a FWHM of 7 nm.


Line 430: Line 437:
The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose and achievable resolution for any given specific project, could be different from the listed values.
The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose and achievable resolution for any given specific project, could be different from the listed values.


All doses are for standard silicon wafers, unless otherwise stated. Development is done using 2.38% TMAH.
All doses are for standard silicon wafers, unless otherwise stated. Development is done using 2.38% TMAH (AZ 726 MIF).




Line 481: Line 488:
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!AZ 5214E
!AZ 5214E
| 2023-07-06<br>jehem
| 2024-11-29<br>taran
| 1.5 µm
| 1.5 µm
| Fast
| Fast
| 110 mJ/cm<sup>2</sup>
| 105 mJ/cm<sup>2</sup>
| 0
| 3
| 1.75 µm
| 1.75 µm
| Dev: SP60s
| Dev: SP60s
Line 563: Line 570:
|rowspan="2"| 325 mJ/cm<sup>2</sup>
|rowspan="2"| 325 mJ/cm<sup>2</sup>
| 1
| 1
|rowspan="2"| 1 µm<br>Tested using dehydration reducing measures
|rowspan="2"| 1 µm<br>Tested using dehydration reducing measures<br>(design elongated +40mm in y).
|rowspan="2"|  
|rowspan="2"|  
PEB: 60s @ 110°C<br>
PEB: 60s @ 110°C<br>
Line 594: Line 601:
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!rowspan="2"| AZ 5214E
!rowspan="2"| AZ 5214E
|rowspan="2"| 2023-08-18<br>jehem
|rowspan="2"| 2024-12-09<br>taran
|rowspan="2"| 1.5 µm
|rowspan="2"| 1.25 µm
|rowspan="2"| 375
|rowspan="2"| 375
| Optical
| Optical
|rowspan="2"| Quality
|rowspan="2"| Quality
|rowspan="2"| 105 mJ/cm<sup>2</sup>
|rowspan="2"| 100 mJ/cm<sup>2</sup>
| 0
| 2
|rowspan="2"| 1.25 µm
|rowspan="2"| 1.5 µm
|rowspan="2"| Dev: SP60s
|rowspan="2"| Dev: SP60s
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
| Pneumatic
| Pneumatic
| 3
| -2 (?)
|-
|-


Line 692: Line 699:
| 1 µm<br>Tested using dehydration reducing measures
| 1 µm<br>Tested using dehydration reducing measures
| PEB: 60s@110°C<br>Dev: SP60s
| PEB: 60s@110°C<br>Dev: SP60s
|-
|-
|-style="background:silver; color:black"
!AZ nLOF 2020
| 2023-06-30<br>jehem
| 2.0 µm
| 405
| Pneumatic
| Quality
| 9000 mJ/cm<sup>2</sup>
| 2
| 1 µm
|
PEB: 60s @ 100°C<br>
Dev: SP60s<br>
<span style="color:red">'''Due to the high dose required on this tool, it is recommended to process nLOF on tools with a more appropriate exposure light source'''</span>
|-
|-


Line 740: Line 730:
Flood exposure: 500mJ/cm<sup>2</sup><br>
Flood exposure: 500mJ/cm<sup>2</sup><br>
Dev: SP60s  
Dev: SP60s  
|-
|-
|-style="background:silver; color:black"
!AZ nLOF 2020
| 2023-06-30<br>jehem
| 2.0 µm
| 405
| Pneumatic
| Quality
| 9000 mJ/cm<sup>2</sup>
| 2
| 1 µm
|
PEB: 60s @ 100°C<br>
Dev: SP60s<br>
<span style="color:red">'''Due to the high dose required on this tool, it is recommended to process nLOF on tools with a more appropriate exposure light source'''</span>
|-
|-


Line 771: Line 778:
The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose for any given specific project, could be different from the listed values.
The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose for any given specific project, could be different from the listed values.


All doses are for standard silicon wafers, unless otherwise stated. Development is done using AZ 351B developer (NaOH).
All doses are for standard silicon wafers, unless otherwise stated. Development is done using AZ 351B developer (NaOH) diluted 1:5.




===KS Aligner (351B)===
===Aligner: MA6-1===
The KS Aligner has an i-line notch filter installed. This results in an exposure light peak around 365 nm with a FWHM of 7 nm.
The Aligner: MA6-1 has an i-line notch filter installed. This results in an exposure light peak around 365 nm with a FWHM of 7 nm.


{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  
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