Specific Process Knowledge/Lithography/Resist/UVresist: Difference between revisions
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Manual coaters:<br> | Manual coaters:<br> | ||
*Spin coater: RCD8 | *Spin coater: RCD8 | ||
or | |||
*Spin coater: Labspin 2 | |||
*Spin coater: Labspin 3 | |||
| | | | ||
Spray coater | Spray coater | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
!Exposure tool | !Exposure tool | ||
|align="center" colspan=" | |align="center" colspan="6"|Mask aligner or Maskless aligner | ||
|- | |- | ||
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*AZ 351B | *AZ 351B | ||
*AZ 726 MIF | *AZ 726 MIF | ||
|AZ 726 MIF | | | ||
*AZ 726 MIF | |||
*[[Specific_Process_Knowledge/Lithography/nLOF#Development|Solvent development]] possible | |||
|AZ 726 MIF | |AZ 726 MIF | ||
|mr-DEV 600 (PGMEA) | |mr-DEV 600 (PGMEA) | ||
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*High aspect ratio | *High aspect ratio | ||
*Resist thickness 1 µm to several 100 µm | *Resist thickness 1 µm to several 100 µm | ||
*Available in cleanroom: 2005, 2035, and 2075. Considering discontinuation of the SU-8 2000 series we need to move to another product SU8 3000 and SU8 XTF series. | |||
*New formulation will be available in cleanroom and tested: 3005 instead of 2005, 3035 instead of 2035, XTF75 instead of 2075 and new 3025. | |||
| | | | ||
Spray coater specific resist | Spray coater specific resist | ||
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==Exposure dose== | ==Exposure dose== | ||
[[Image: | [[Image:resistSensitivity_UV.png|400px|thumb|Spectral sensitivity of AZ resists represented as optical absorption coefficient.]] | ||
During exposure of the resist, the photoinitiator, or photo-active component, reacts with the exposure light, and starts the reaction which makes the resist develop in the developer. | During exposure of the resist, the photoinitiator, or photo-active component, reacts with the exposure light, and starts the reaction which makes the resist develop in the developer. | ||
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The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose for any given specific project, could be different from the listed values. | The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose for any given specific project, could be different from the listed values. | ||
All doses are for standard silicon wafers, unless otherwise stated. Development is done using 2.38% TMAH. | All doses are for standard silicon wafers, unless otherwise stated. Development is done using 2.38% TMAH (AZ 726 MIF). | ||
=== | ===Aligner: MA6-1=== | ||
The | The Aligner: MA6-1 has an i-line notch filter installed. This results in an exposure light peak around 365 nm with a FWHM of 7 nm. | ||
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;" | {|border="1" cellspacing="1" cellpadding="10" style="text-align:left;" | ||
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===Aligner: MA6 - 2=== | ===Aligner: MA6-2=== | ||
The Aligner: MA6-2 has an i-line notch filter installed. This results in an exposure light peak around 365 nm with a FWHM of 7 nm. | The Aligner: MA6-2 has an i-line notch filter installed. This results in an exposure light peak around 365 nm with a FWHM of 7 nm. | ||
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|-style="background:whitesmoke; color:black" | |-style="background:whitesmoke; color:black" | ||
!AZ MiR 701 | !AZ MiR 701 | ||
| | |2023-09-26<br>taran | ||
|1.5 µm | |1.5 µm | ||
|150 mJ/cm<sup>2</sup> | |150 mJ/cm<sup>2</sup> | ||
(13.5s @ 11mW/cm<sup>2</sup>) | |||
|Single puddle, 60 s | |Single puddle, 60 s | ||
|PEB: 60 s @ 110°C | |PEB: 60 s @ 110°C | ||
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|-style="background:silver; color:black" | |-style="background:silver; color:black" | ||
!AZ nLOF 2020 | !AZ nLOF 2020 | ||
| | |2023-09-26<br>taran | ||
| | |2 µm | ||
| | |121 mJ/cm<sup>2</sup> | ||
|Single puddle, | (11 s @ 11 mW/cm<sup>2</sup>) | ||
|PEB: 60 s @ 110°C<br> | |Single puddle, 60 s | ||
|PEB: 60 s @ 110°C<br>60 s development for lift-off | |||
|- | |- | ||
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==Exposure dose for maskless aligners== | ==Exposure dose for maskless aligners== | ||
The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose for any given specific project, could be different from the listed values. | The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose and achievable resolution for any given specific project, could be different from the listed values. | ||
All doses are for standard silicon wafers, unless otherwise stated. Development is done using 2.38% TMAH. | All doses are for standard silicon wafers, unless otherwise stated. Development is done using 2.38% TMAH (AZ 726 MIF). | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
!AZ 5214E | !AZ 5214E | ||
| | | 2024-11-29<br>taran | ||
| 1.5 µm | | 1.5 µm | ||
| Fast | | Fast | ||
| | | 105 mJ/cm<sup>2</sup> | ||
| | | 3 | ||
| 1.75 µm | | 1.75 µm | ||
| Dev: SP60s | | Dev: SP60s | ||
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|rowspan="2"| 325 mJ/cm<sup>2</sup> | |rowspan="2"| 325 mJ/cm<sup>2</sup> | ||
| 1 | | 1 | ||
|rowspan="2"| 1 µm<br>Tested using dehydration reducing measures | |rowspan="2"| 1 µm<br>Tested using dehydration reducing measures<br>(design elongated +40mm in y). | ||
|rowspan="2"| | |rowspan="2"| | ||
PEB: 60s @ 110°C<br> | PEB: 60s @ 110°C<br> | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
!rowspan="2"| AZ 5214E | !rowspan="2"| AZ 5214E | ||
|rowspan="2"| | |rowspan="2"| 2024-12-09<br>taran | ||
|rowspan="2"| 1. | |rowspan="2"| 1.25 µm | ||
|rowspan="2"| 375 | |rowspan="2"| 375 | ||
| Optical | | Optical | ||
|rowspan="2"| Quality | |rowspan="2"| Quality | ||
|rowspan="2"| | |rowspan="2"| 100 mJ/cm<sup>2</sup> | ||
| | | 2 | ||
|rowspan="2"| 1. | |rowspan="2"| 1.5 µm | ||
|rowspan="2"| Dev: SP60s | |rowspan="2"| Dev: SP60s | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
| Pneumatic | | Pneumatic | ||
| | | -2 (?) | ||
|- | |- | ||
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| 1 µm<br>Tested using dehydration reducing measures | | 1 µm<br>Tested using dehydration reducing measures | ||
| PEB: 60s@110°C<br>Dev: SP60s | | PEB: 60s@110°C<br>Dev: SP60s | ||
|- | |- | ||
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Flood exposure: 500mJ/cm<sup>2</sup><br> | Flood exposure: 500mJ/cm<sup>2</sup><br> | ||
Dev: SP60s | Dev: SP60s | ||
|- | |||
|- | |||
|-style="background:silver; color:black" | |||
!AZ nLOF 2020 | |||
| 2023-06-30<br>jehem | |||
| 2.0 µm | |||
| 405 | |||
| Pneumatic | |||
| Quality | |||
| 9000 mJ/cm<sup>2</sup> | |||
| 2 | |||
| 1 µm | |||
| | |||
PEB: 60s @ 100°C<br> | |||
Dev: SP60s<br> | |||
<span style="color:red">'''Due to the high dose required on this tool, it is recommended to process nLOF on tools with a more appropriate exposure light source'''</span> | |||
|- | |- | ||
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The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose for any given specific project, could be different from the listed values. | The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose for any given specific project, could be different from the listed values. | ||
All doses are for standard silicon wafers, unless otherwise stated. Development is done using AZ 351B developer (NaOH). | All doses are for standard silicon wafers, unless otherwise stated. Development is done using AZ 351B developer (NaOH) diluted 1:5. | ||
=== | ===Aligner: MA6-1=== | ||
The | The Aligner: MA6-1 has an i-line notch filter installed. This results in an exposure light peak around 365 nm with a FWHM of 7 nm. | ||
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;" | {|border="1" cellspacing="1" cellpadding="10" style="text-align:left;" | ||