Specific Process Knowledge/Lithography/nLOF: Difference between revisions
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*PEB temperature: 110°C | *PEB temperature: 110°C | ||
*PEB time: 60 s | *PEB time: 60 s | ||
The recommended PEB for nLOF is 60 seconds at 110°C, regardless of resist film thickness. | The recommended PEB for nLOF is 60 seconds at 110°C, regardless of resist film thickness. | ||
===PEB baking time investigation=== | ===PEB baking time investigation=== | ||
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*Puddle development in 2.38% TMAH (AZ 726 MIF): ~4 µm/min | *Puddle development in 2.38% TMAH (AZ 726 MIF): ~4 µm/min | ||
A 2 µm nLOF resist film is fully developed in ~30 s in 2.38% TMAH (AZ 726 MIF). However, the development can be continued to 60 s in order to get a more negative resist profile (due to increased under-cut). | |||
A | ===Solvent development=== | ||
Cross-linking negative resists have the potential to be developed using organic solvents instead of the normally used alkaline aqueous solutions. A quick test of this was carried out by Thomas Anhøj @ DTU Nanolab, showing that nLOF 2020 could potentially be used for water-free lithography. | |||
A small report on the test can be found here: [[media:nLOF_solventdev_2024.pdf|'''nLOF solvent development 2024''']]. | |||