Specific Process Knowledge/Etch/DRIE-Pegasus/DREM/DREM 3kW 100% b

Date	Substrate Information		Process Information				Results
	Wafer info	Material/ Exposed area	Condi- tioning	Recipe	Wafer ID	Comments	SEM images	Picoscope	Numbers
29/11-2019	Medusa One	Si / 10%	stab-19 chamber clean 20	nanolab/ jmli /DREM 3.0 kW 100% b	S018653	Process log entry			SEM image: a000 a001 a002 a003 a004 a005 a006 a007 a008 a009 a010 a011 a012 a013 Trench width (um) 159.77 401.82 251.88 250.36 158.96 99.72 61.82 40.77 32.13 25.67 12.84 7.24 4.13 2.6 Etched depth (um) 145.56 145.42 145.8 147.62 146.52 142.74 136.64 128.65 123.88 118.18 100.34 84.65 69.04 60.36 Etch rate (um/min) 14.56 14.54 14.58 14.76 14.65 14.27 13.66 12.86 12.39 11.82 10.03 8.46 6.9 6.04 Etch rate (nm/cyc) 1.21 1.21 1.21 1.23 1.22 1.19 1.14 1.07 1.03 0.98 0.84 0.71 0.58 0.5 Sidewall bowing (%) -0.28 -0.51 -0.38 -0.38 -0.4 0.05 0.18 -0.14 0.09 0.19 0.36 0.45 0.52 0.53 Sidewall angle (degs) 92.65 93.1 92.66 93.02 92.84 92.17 92.04 91.86 91.92 91.7 91.52 91.05 90.71 90.61 Bottom bowing (%) 8.1 3.9 6.18 6.71 9.14 10.53 14.26 17.43 16 16.76 15.69 16.18 14.53 11.69 Aspect ratio 0.87 0.35 0.56 0.57 0.88 1.36 2.05 2.86 3.41 4.05 6.47 9.64 13.86 18.56