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Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/isotropic: Difference between revisions

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Created page with "= Isotropic etching in silicon on the ICP Metal Etch = {| border="1" cellpadding="0" cellspacing="0" style="text-align:center;" |+ '''Process parameters''' |- ! rowspan="2"..."
 
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= Isotropic etching in silicon on the ICP Metal Etch =
= Isotropic etching in silicon on the ICP Metal Etch =
 
<!--Checked for updates on 11/2-2019 - ok/jmli -->
 
<!--Checked for updates on 24/8-2021. ok/ jmli-->
<!--Checked for updates on 4/4-2025 - ok/jmli -->


{| border="1" cellpadding="0" cellspacing="0" style="text-align:center;"
{| border="1" cellpadding="0" cellspacing="0" style="text-align:center;"
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! rowspan="2" width="20"| Time
! rowspan="2" width="20"| Time
! rowspan="2" width="20"| Pres.
! rowspan="2" width="20"| Pres.
! rowspan="2" width="20"| [[Main Page/Process Logs/jmli/Parameters#Hardware | Hardware]]  
! rowspan="2" width="20"| [[Specific Process Knowledge/Etch/DRIE-Pegasus/Parameters#Hardware | Hardware]]
! colspan="10" | Gasses
! colspan="10" | Gasses
! colspan="2" | RF powers
! colspan="2" | RF powers
Line 28: Line 29:
! width="40" | Coil  
! width="40" | Coil  
! width="40" | Platen
! width="40" | Platen
! width="40" | Runs
! width="80" | SEM images of different runs
! width="40" | Keywords
! width="40" | Keywords
|-
|-
Line 35: Line 36:
| 20            <!--Temperature  -->
| 20            <!--Temperature  -->
| -            <!--Process time (needed if ramping is enabled)  -->
| -            <!--Process time (needed if ramping is enabled)  -->
| 90 ?          <!--Pressure  -->
| 10            <!--Pressure  -->
|       <!--Process chamber setup  -->
| -      <!--Process chamber setup  -->
| 50 ?            <!--SF6 flow  -->
| 90            <!--SF6 flow  -->
| 0            <!--O2 flow  -->
| 0            <!--O2 flow  -->
| 0            <!--C4F8 flow  -->
| 0            <!--C4F8 flow  -->
Line 49: Line 50:
| 400            <!--Coil power  -->
| 400            <!--Coil power  -->
| 3          <!--Platen power  -->
| 3          <!--Platen power  -->
| [[Main Page/Process Logs/jmli/IcpMetal/Si/isotropic/isoslow1 | 1]]       <!-- link processes -->
| [[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/isotropic/isoslow1|'''Click HERE!''' ]]     <!-- link processes -->
| NA           <!--Keywords  -->
| Note: Lior Shiv got very high etch rate for this recipe >1.5µm/min 2019-07-12           <!--Keywords  -->
|-
|-
| '''r'''  || A || 20 || - || 28 || LF+B100 || 30 || 37 || 0 || 0 || 0 || 0 || 0  || 0 || 0 || 0  || 0 || 100
|| [[Main Page/Process Logs/jmli/IcpMetal/BS/rdabs2 | 1]]  || NA 
|-
|-
! no name, tested by Lior Shiv@Capres 2019-07-12    <!--Recipe Name  -->
| A          <!--Step  -->
| 20            <!--Temperature  -->
| -            <!--Process time (needed if ramping is enabled)  -->
| 10            <!--Pressure  -->
| -      <!--Process chamber setup  -->
| 90            <!--SF6 flow  -->
| 0            <!--O2 flow  -->
| 0            <!--C4F8 flow  -->
| 0            <!--Ar flow  -->
| 0            <!--CF4 flow  -->
| 0            <!--H2 flow  -->
| 0            <!--CH4 flow  -->
| 0            <!--BCl3 flow  -->
| 0            <!--Cl2 flow  -->
| 0            <!--HBr flow  -->
| 150          <!--Coil power  -->
| 3          <!--Platen power  -->
|      <!-- link processes -->
| About 10% load, etch rate around 400nm/min          <!--Keywords  -->
|-
|}
|}
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